JP2017041542A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2017041542A JP2017041542A JP2015162585A JP2015162585A JP2017041542A JP 2017041542 A JP2017041542 A JP 2017041542A JP 2015162585 A JP2015162585 A JP 2015162585A JP 2015162585 A JP2015162585 A JP 2015162585A JP 2017041542 A JP2017041542 A JP 2017041542A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 89
- 239000000203 mixture Substances 0.000 claims abstract description 48
- 150000004767 nitrides Chemical class 0.000 claims abstract description 44
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 37
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 33
- 229910052738 indium Inorganic materials 0.000 claims abstract description 21
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 19
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 239000012535 impurity Substances 0.000 abstract description 14
- 239000010410 layer Substances 0.000 description 120
- 229910002601 GaN Inorganic materials 0.000 description 81
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 64
- AUCDRFABNLOFRE-UHFFFAOYSA-N alumane;indium Chemical compound [AlH3].[In] AUCDRFABNLOFRE-UHFFFAOYSA-N 0.000 description 26
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 19
- 239000011241 protective layer Substances 0.000 description 16
- 238000000034 method Methods 0.000 description 11
- 229910002704 AlGaN Inorganic materials 0.000 description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 4
- 238000013459 approach Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 3
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/432—Heterojunction gate for field effect devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
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- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
保護層を被覆した際に生成される不純物の生成を抑制したキャップ層を有する半導体装置を提供する。
【解決手段】
実施形態の半導体装置は、基板と、前記基板の上に形成された第1の窒化物半導体層と、前記第1の窒化物半導体層の上に形成され、ガリウム元素を含有する第2の窒化物半導体層と、前記第2の窒化物半導体層の上に形成され、インジウム元素とアルミニウム元素とガリウム元素とを含有し、ガリウム元素の組成比が前記第2の窒化物半導体層よりも小さい割合である第3の窒化物半導体層とを具備している。
【選択図】図1
Description
図1は第1の実施形態である半導体装置100の断面図である。
図2の破線の近傍の特性を有するInxAlyGa1−x−yNについて、GaN、AlN、InNそれぞれのプロットを結んだ三角形の各辺の傾きから、Gaの組成比を0.8から0.0まで0.1刻みで変化させた時における、インジウム元素(In)の組成比xとアルミニウム元素(Al)の組成比yとの値を算出した表が表1となる。
インジウム元素(In)の組成比xがアルミニウム元素(Al)の組成比yの22%とした場合、窒化インジウムアルミニウムガリウム層40を組成比yに基づいて表すと、In0.22yAlyGa1−1.22yN(0≦y≦(1/1.22))となる。
第2の実施形態の半導体装置の100の断面図は図1と同様である。
20‥‥窒化ガリウム層(GaN層、第1の窒化物半導体層)、
30‥‥窒化アルミニウムガリウム層(AlGaN層、第2の窒化物半導体層)、
40‥‥窒化インジウムアルミニウムガリウム層(InAlGaN層、第3の窒化物半導体層)、
50‥‥ソース電極、
51‥‥ゲート電極、
52‥‥ドレイン電極、
60‥‥保護層。
Claims (5)
- 基板と、
前記基板の上に形成された第1の窒化物半導体層と、
前記第1の窒化物半導体層の上に形成され、ガリウム元素を含有する第2の窒化物半導体層と、
前記第2の窒化物半導体層の上に形成され、インジウム元素とアルミニウム元素とガリウム元素とを含有し、ガリウム元素の組成比が前記第2の窒化物半導体層よりも小さい割合である第3の窒化物半導体層と、
を具備する半導体装置。 - 前記第3の窒化物半導体層のガリウム元素の組成比は、インジウム元素とアルミニウム元素とガリウム元素との組成において80%未満である、
請求項1に記載の半導体装置。 - 前記第3の窒化物半導体層は、インジウム元素の組成比とアルミニウム元素の組成比とに基づいて、前記第1の窒化物半導体層と略同一の格子間距離特性を有する、
請求項1または請求項2に記載の半導体装置。 - 前記第3の窒化物半導体層は、インジウム元素の組成比とアルミニウム元素の組成比とに基づいて、前記第2の窒化物半導体層と略同一の格子間距離特性を有する、
請求項1または請求項2に記載の半導体装置。 - 前記第3の窒化物半導体層は、インジウム元素の組成比がアルミニウム元素の組成比に対して22%程度である、
請求項1または請求項2に記載の半導体装置。
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JP2015162585A JP2017041542A (ja) | 2015-08-20 | 2015-08-20 | 半導体装置 |
US15/230,557 US20170054013A1 (en) | 2015-08-20 | 2016-08-08 | Semiconductor device |
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JP2015162585A JP2017041542A (ja) | 2015-08-20 | 2015-08-20 | 半導体装置 |
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JP2015162585A Pending JP2017041542A (ja) | 2015-08-20 | 2015-08-20 | 半導体装置 |
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JP (1) | JP2017041542A (ja) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002289837A (ja) * | 2001-03-27 | 2002-10-04 | Matsushita Electric Ind Co Ltd | 半導体装置 |
JP2003243424A (ja) * | 2002-02-21 | 2003-08-29 | Oki Electric Ind Co Ltd | ヘテロ接合電界効果トランジスタ |
JP2013074045A (ja) * | 2011-09-27 | 2013-04-22 | Sumitomo Electric Ind Ltd | 半導体装置 |
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US20100270591A1 (en) * | 2009-04-27 | 2010-10-28 | University Of Seoul Industry Cooperation Foundation | High-electron mobility transistor |
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- 2015-08-20 JP JP2015162585A patent/JP2017041542A/ja active Pending
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- 2016-08-08 US US15/230,557 patent/US20170054013A1/en not_active Abandoned
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002289837A (ja) * | 2001-03-27 | 2002-10-04 | Matsushita Electric Ind Co Ltd | 半導体装置 |
JP2003243424A (ja) * | 2002-02-21 | 2003-08-29 | Oki Electric Ind Co Ltd | ヘテロ接合電界効果トランジスタ |
JP2013074045A (ja) * | 2011-09-27 | 2013-04-22 | Sumitomo Electric Ind Ltd | 半導体装置 |
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