DE60217673T2 - Belichtungsvorrichtung mit einem optischen Element aus isometrischem Kristall - Google Patents
Belichtungsvorrichtung mit einem optischen Element aus isometrischem Kristall Download PDFInfo
- Publication number
- DE60217673T2 DE60217673T2 DE60217673T DE60217673T DE60217673T2 DE 60217673 T2 DE60217673 T2 DE 60217673T2 DE 60217673 T DE60217673 T DE 60217673T DE 60217673 T DE60217673 T DE 60217673T DE 60217673 T2 DE60217673 T2 DE 60217673T2
- Authority
- DE
- Germany
- Prior art keywords
- optical
- axis
- optical element
- intrinsic birefringence
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 458
- 239000013078 crystal Substances 0.000 title claims abstract description 89
- 238000004519 manufacturing process Methods 0.000 claims abstract description 31
- 238000000034 method Methods 0.000 claims description 39
- 230000008569 process Effects 0.000 claims description 24
- 239000004065 semiconductor Substances 0.000 claims description 10
- 238000005286 illumination Methods 0.000 claims description 4
- 238000011161 development Methods 0.000 claims description 3
- 238000005520 cutting process Methods 0.000 claims description 2
- 238000004806 packaging method and process Methods 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 14
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 31
- 229910001634 calcium fluoride Inorganic materials 0.000 description 26
- 238000004088 simulation Methods 0.000 description 14
- 229910004261 CaF 2 Inorganic materials 0.000 description 13
- 239000000463 material Substances 0.000 description 11
- 238000003384 imaging method Methods 0.000 description 9
- 238000000137 annealing Methods 0.000 description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 6
- 230000006872 improvement Effects 0.000 description 6
- OYLGJCQECKOTOL-UHFFFAOYSA-L barium fluoride Chemical compound [F-].[F-].[Ba+2] OYLGJCQECKOTOL-UHFFFAOYSA-L 0.000 description 5
- 229910001632 barium fluoride Inorganic materials 0.000 description 5
- 230000005855 radiation Effects 0.000 description 5
- FVRNDBHWWSPNOM-UHFFFAOYSA-L strontium fluoride Chemical compound [F-].[F-].[Sr+2] FVRNDBHWWSPNOM-UHFFFAOYSA-L 0.000 description 5
- 229910001637 strontium fluoride Inorganic materials 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 4
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 4
- 230000033001 locomotion Effects 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- BHHYHSUAOQUXJK-UHFFFAOYSA-L zinc fluoride Chemical compound F[Zn]F BHHYHSUAOQUXJK-UHFFFAOYSA-L 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000001444 catalytic combustion detection Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 239000002516 radical scavenger Substances 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 238000007670 refining Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- 229910016036 BaF 2 Inorganic materials 0.000 description 2
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 239000002318 adhesion promoter Substances 0.000 description 2
- 230000004075 alteration Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 238000011835 investigation Methods 0.000 description 2
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- PUZPDOWCWNUUKD-UHFFFAOYSA-M sodium fluoride Chemical compound [F-].[Na+] PUZPDOWCWNUUKD-UHFFFAOYSA-M 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- WTDRDQBEARUVNC-LURJTMIESA-N L-DOPA Chemical compound OC(=O)[C@@H](N)CC1=CC=C(O)C(O)=C1 WTDRDQBEARUVNC-LURJTMIESA-N 0.000 description 1
- 241000276498 Pollachius virens Species 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- BRCWHGIUHLWZBK-UHFFFAOYSA-K bismuth;trifluoride Chemical compound F[Bi](F)F BRCWHGIUHLWZBK-UHFFFAOYSA-K 0.000 description 1
- 238000009395 breeding Methods 0.000 description 1
- LVEULQCPJDDSLD-UHFFFAOYSA-L cadmium fluoride Chemical compound F[Cd]F LVEULQCPJDDSLD-UHFFFAOYSA-L 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 150000004653 carbonic acids Chemical class 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 238000012258 culturing Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000006356 dehydrogenation reaction Methods 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
- 238000012634 optical imaging Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000011775 sodium fluoride Substances 0.000 description 1
- 235000013024 sodium fluoride Nutrition 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
- G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
- G03F7/70966—Birefringence
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/12—Halides
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/02—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of crystals, e.g. rock-salt, semi-conductors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/918—Single-crystal waveguide
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Optics & Photonics (AREA)
- Public Health (AREA)
- Epidemiology (AREA)
- Environmental & Geological Engineering (AREA)
- Health & Medical Sciences (AREA)
- Inorganic Chemistry (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Lenses (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Polarising Elements (AREA)
- Liquid Crystal (AREA)
- Pressure Sensors (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001234254 | 2001-06-27 | ||
| JP2001234254 | 2001-06-27 | ||
| JP2001244970A JP3639807B2 (ja) | 2001-06-27 | 2001-07-06 | 光学素子及び製造方法 |
| JP2001244970 | 2001-07-06 | ||
| PCT/JP2002/005952 WO2003003072A2 (en) | 2001-06-27 | 2002-06-13 | Optical element and manufacturing method therefor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE60217673D1 DE60217673D1 (de) | 2007-03-08 |
| DE60217673T2 true DE60217673T2 (de) | 2007-10-18 |
Family
ID=26619804
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE60217673T Expired - Lifetime DE60217673T2 (de) | 2001-06-27 | 2002-06-13 | Belichtungsvorrichtung mit einem optischen Element aus isometrischem Kristall |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US7102828B2 (enExample) |
| EP (1) | EP1399766B1 (enExample) |
| JP (1) | JP3639807B2 (enExample) |
| KR (1) | KR100544394B1 (enExample) |
| AT (1) | ATE352048T1 (enExample) |
| DE (1) | DE60217673T2 (enExample) |
| TW (1) | TWI244679B (enExample) |
| WO (1) | WO2003003072A2 (enExample) |
Families Citing this family (124)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10028434B4 (de) * | 2000-06-14 | 2005-09-29 | Ludwig Felser | Stahlbausystem |
| WO2002031570A1 (en) * | 2000-10-10 | 2002-04-18 | Nikon Corporation | Method of evaluating imaging performance |
| US7239447B2 (en) * | 2001-05-15 | 2007-07-03 | Carl Zeiss Smt Ag | Objective with crystal lenses |
| KR20040015251A (ko) * | 2001-05-15 | 2004-02-18 | 칼 짜이스 에스엠티 아게 | 불화물 결정 렌즈들을 포함하는 렌즈 시스템 |
| DE10210782A1 (de) * | 2002-03-12 | 2003-10-09 | Zeiss Carl Smt Ag | Objektiv mit Kristall-Linsen |
| DE10123725A1 (de) | 2001-05-15 | 2002-11-21 | Zeiss Carl | Projektionsbelichtungsanlage der Mikrolithographie, Optisches System und Herstellverfahren |
| US6683710B2 (en) * | 2001-06-01 | 2004-01-27 | Optical Research Associates | Correction of birefringence in cubic crystalline optical systems |
| US20030011893A1 (en) * | 2001-06-20 | 2003-01-16 | Nikon Corporation | Optical system and exposure apparatus equipped with the optical system |
| US6831731B2 (en) * | 2001-06-28 | 2004-12-14 | Nikon Corporation | Projection optical system and an exposure apparatus with the projection optical system |
| US6788389B2 (en) * | 2001-07-10 | 2004-09-07 | Nikon Corporation | Production method of projection optical system |
| US6775063B2 (en) | 2001-07-10 | 2004-08-10 | Nikon Corporation | Optical system and exposure apparatus having the optical system |
| US6844915B2 (en) * | 2001-08-01 | 2005-01-18 | Nikon Corporation | Optical system and exposure apparatus provided with the optical system |
| KR20040032994A (ko) * | 2001-09-07 | 2004-04-17 | 가부시키가이샤 니콘 | 광학계 및 이 광학계를 구비한 노광장치, 그리고디바이스의 제조방법 |
| US20030070606A1 (en) * | 2001-10-05 | 2003-04-17 | Leblond Nicolas | Preparation of feedstock of alkaline earth and alkali metal fluorides |
| US7453641B2 (en) | 2001-10-30 | 2008-11-18 | Asml Netherlands B.V. | Structures and methods for reducing aberration in optical systems |
| US6970232B2 (en) * | 2001-10-30 | 2005-11-29 | Asml Netherlands B.V. | Structures and methods for reducing aberration in integrated circuit fabrication systems |
| US6995908B2 (en) * | 2001-10-30 | 2006-02-07 | Asml Netherlands B.V. | Methods for reducing aberration in optical systems |
| DE10162796B4 (de) * | 2001-12-20 | 2007-10-31 | Carl Zeiss Smt Ag | Verfahren zur Optimierung der Abbildungseigenschaften von mindestens zwei optischen Elementen sowie photolithographisches Fertigungsverfahren |
| US7075721B2 (en) * | 2002-03-06 | 2006-07-11 | Corning Incorporated | Compensator for radially symmetric birefringence |
| JP2003309059A (ja) * | 2002-04-17 | 2003-10-31 | Nikon Corp | 投影光学系、その製造方法、露光装置および露光方法 |
| JP4333078B2 (ja) * | 2002-04-26 | 2009-09-16 | 株式会社ニコン | 投影光学系、該投影光学系を備えた露光装置および該投影光学系を用いた露光方法並びにデバイス製造方法 |
| US7292388B2 (en) * | 2002-05-08 | 2007-11-06 | Carl Zeiss Smt Ag | Lens made of a crystalline material |
| JP2004045692A (ja) * | 2002-07-11 | 2004-02-12 | Canon Inc | 投影光学系、露光装置及びデバイス製造方法 |
| US7072102B2 (en) * | 2002-08-22 | 2006-07-04 | Asml Netherlands B.V. | Methods for reducing polarization aberration in optical systems |
| DE10345895B4 (de) * | 2002-10-01 | 2015-11-05 | Nikon Corp. | Verfahren zur Herstellung eines durch einen Fluoridkristall gebildeten optischen Elements |
| US20060171138A1 (en) * | 2003-07-24 | 2006-08-03 | Kenichi Muramatsu | Illuminating optical system, exposure system and exposure method |
| US7463422B2 (en) * | 2004-01-14 | 2008-12-09 | Carl Zeiss Smt Ag | Projection exposure apparatus |
| US7239450B2 (en) | 2004-11-22 | 2007-07-03 | Carl Zeiss Smt Ag | Method of determining lens materials for a projection exposure apparatus |
| JP4776891B2 (ja) * | 2004-04-23 | 2011-09-21 | キヤノン株式会社 | 照明光学系、露光装置、及びデバイス製造方法 |
| EP1851574A1 (en) * | 2005-02-25 | 2007-11-07 | Carl Zeiss SMT AG | Optical system, in particular objective or illumination system for a microlithographic projection exposure apparatus |
| WO2010065163A2 (en) * | 2008-06-05 | 2010-06-10 | Soraa, Inc. | Highly polarized white light source by combining blue led on semipolar or nonpolar gan with yellow led on semipolar or nonpolar gan |
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| US8805134B1 (en) | 2012-02-17 | 2014-08-12 | Soraa Laser Diode, Inc. | Methods and apparatus for photonic integration in non-polar and semi-polar oriented wave-guided optical devices |
| CN105762249A (zh) | 2008-08-04 | 2016-07-13 | Soraa有限公司 | 使用非极性或半极性的含镓材料和磷光体的白光器件 |
| US8284810B1 (en) | 2008-08-04 | 2012-10-09 | Soraa, Inc. | Solid state laser device using a selected crystal orientation in non-polar or semi-polar GaN containing materials and methods |
| US20100295088A1 (en) * | 2008-10-02 | 2010-11-25 | Soraa, Inc. | Textured-surface light emitting diode and method of manufacture |
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| WO2010120819A1 (en) | 2009-04-13 | 2010-10-21 | Kaai, Inc. | Optical device structure using gan substrates for laser applications |
| US8634442B1 (en) | 2009-04-13 | 2014-01-21 | Soraa Laser Diode, Inc. | Optical device structure using GaN substrates for laser applications |
| US8242522B1 (en) | 2009-05-12 | 2012-08-14 | Soraa, Inc. | Optical device structure using non-polar GaN substrates and growth structures for laser applications in 481 nm |
| US8837545B2 (en) | 2009-04-13 | 2014-09-16 | Soraa Laser Diode, Inc. | Optical device structure using GaN substrates and growth structures for laser applications |
| US8416825B1 (en) | 2009-04-17 | 2013-04-09 | Soraa, Inc. | Optical device structure using GaN substrates and growth structure for laser applications |
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| US8247887B1 (en) * | 2009-05-29 | 2012-08-21 | Soraa, Inc. | Method and surface morphology of non-polar gallium nitride containing substrates |
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| US9250044B1 (en) | 2009-05-29 | 2016-02-02 | Soraa Laser Diode, Inc. | Gallium and nitrogen containing laser diode dazzling devices and methods of use |
| US20110056429A1 (en) * | 2009-08-21 | 2011-03-10 | Soraa, Inc. | Rapid Growth Method and Structures for Gallium and Nitrogen Containing Ultra-Thin Epitaxial Structures for Devices |
| US9000466B1 (en) | 2010-08-23 | 2015-04-07 | Soraa, Inc. | Methods and devices for light extraction from a group III-nitride volumetric LED using surface and sidewall roughening |
| US8314429B1 (en) | 2009-09-14 | 2012-11-20 | Soraa, Inc. | Multi color active regions for white light emitting diode |
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-
2001
- 2001-07-06 JP JP2001244970A patent/JP3639807B2/ja not_active Expired - Fee Related
- 2001-08-22 US US09/934,947 patent/US7102828B2/en not_active Expired - Fee Related
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- 2002-06-13 EP EP02736104A patent/EP1399766B1/en not_active Revoked
- 2002-06-13 AT AT02736104T patent/ATE352048T1/de not_active IP Right Cessation
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- 2002-06-13 DE DE60217673T patent/DE60217673T2/de not_active Expired - Lifetime
- 2002-06-13 KR KR1020037014060A patent/KR100544394B1/ko not_active Expired - Fee Related
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| EP1399766A2 (en) | 2004-03-24 |
| KR20040015179A (ko) | 2004-02-18 |
| WO2003003072A3 (en) | 2003-10-30 |
| DE60217673D1 (de) | 2007-03-08 |
| US7102828B2 (en) | 2006-09-05 |
| KR100544394B1 (ko) | 2006-01-23 |
| US20030000453A1 (en) | 2003-01-02 |
| US20040136084A1 (en) | 2004-07-15 |
| JP3639807B2 (ja) | 2005-04-20 |
| US7262920B2 (en) | 2007-08-28 |
| WO2003003072A2 (en) | 2003-01-09 |
| JP2003131002A (ja) | 2003-05-08 |
| EP1399766B1 (en) | 2007-01-17 |
| ATE352048T1 (de) | 2007-02-15 |
| TWI244679B (en) | 2005-12-01 |
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