DE60210264D1 - Verfahren zur herstellung von silizium einkristall mit verbesserter gate-oxid integrität - Google Patents

Verfahren zur herstellung von silizium einkristall mit verbesserter gate-oxid integrität

Info

Publication number
DE60210264D1
DE60210264D1 DE60210264T DE60210264T DE60210264D1 DE 60210264 D1 DE60210264 D1 DE 60210264D1 DE 60210264 T DE60210264 T DE 60210264T DE 60210264 T DE60210264 T DE 60210264T DE 60210264 D1 DE60210264 D1 DE 60210264D1
Authority
DE
Germany
Prior art keywords
silicon crystal
producing silicon
improved gate
oxide integrity
integrity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60210264T
Other languages
English (en)
Other versions
DE60210264T2 (de
Inventor
R J Falster
V Vladimir
Paolo Mutti
F Bonoli
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SunEdison Inc
Original Assignee
SunEdison Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SunEdison Inc filed Critical SunEdison Inc
Application granted granted Critical
Publication of DE60210264D1 publication Critical patent/DE60210264D1/de
Publication of DE60210264T2 publication Critical patent/DE60210264T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/203—Controlling or regulating the relationship of pull rate (v) to axial thermal gradient (G)
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/206—Controlling or regulating the thermal history of growing the ingot
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/21—Circular sheet or circular blank

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
DE60210264T 2001-01-02 2002-01-02 Verfahren zur herstellung von silizium einkristall mit verbesserter gate-oxid integrität Expired - Lifetime DE60210264T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US25936201P 2001-01-02 2001-01-02
US259362P 2001-01-02
PCT/US2002/001127 WO2002066714A2 (en) 2001-01-02 2002-01-02 Process for preparing single crystal silicon having improved gate oxide integrity

Publications (2)

Publication Number Publication Date
DE60210264D1 true DE60210264D1 (de) 2006-05-18
DE60210264T2 DE60210264T2 (de) 2006-08-24

Family

ID=22984626

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60210264T Expired - Lifetime DE60210264T2 (de) 2001-01-02 2002-01-02 Verfahren zur herstellung von silizium einkristall mit verbesserter gate-oxid integrität

Country Status (7)

Country Link
US (3) US6986925B2 (de)
EP (1) EP1348048B1 (de)
JP (2) JP4554886B2 (de)
KR (2) KR100708788B1 (de)
CN (1) CN1489643A (de)
DE (1) DE60210264T2 (de)
WO (1) WO2002066714A2 (de)

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US6986925B2 (en) * 2001-01-02 2006-01-17 Memc Electronic Materials, Inc. Single crystal silicon having improved gate oxide integrity
TWI265217B (en) * 2002-11-14 2006-11-01 Komatsu Denshi Kinzoku Kk Method and device for manufacturing silicon wafer, method for manufacturing silicon single crystal, and device for pulling up silicon single crystal
DE102005063516B4 (de) * 2005-06-17 2014-05-22 Siltronic Ag Halbleiterscheibe aus Silizium mit agglomerierten Leerstellendefekten
DE102005028202B4 (de) 2005-06-17 2010-04-15 Siltronic Ag Verfahren zur Herstellung von Halbleiterscheiben aus Silizium
JP4805681B2 (ja) * 2006-01-12 2011-11-02 ジルトロニック アクチエンゲゼルシャフト エピタキシャルウェーハおよびエピタキシャルウェーハの製造方法
CN100383295C (zh) * 2006-03-31 2008-04-23 浙江大学 直拉式晶体生长炉自动控制方法
EP2027312B1 (de) * 2006-05-19 2015-02-18 MEMC Electronic Materials, Inc. Kontrolle der formierung von durch die seitliche oberfläche eines silicium-einkristalls während des cz-wachstums hervorgerufenen agglomerierten punktdefekten und sauerstoffclustern
JP4513798B2 (ja) * 2006-10-24 2010-07-28 信越半導体株式会社 単結晶製造装置及び単結晶の製造方法
US20090004458A1 (en) * 2007-06-29 2009-01-01 Memc Electronic Materials, Inc. Diffusion Control in Heavily Doped Substrates
US20090004426A1 (en) * 2007-06-29 2009-01-01 Memc Electronic Materials, Inc. Suppression of Oxygen Precipitation in Heavily Doped Single Crystal Silicon Substrates
JP4978396B2 (ja) * 2007-09-19 2012-07-18 信越半導体株式会社 エピタキシャルウェーハの製造方法
US8476149B2 (en) * 2008-07-31 2013-07-02 Global Wafers Japan Co., Ltd. Method of manufacturing single crystal silicon wafer from ingot grown by Czocharlski process with rapid heating/cooling process
JP5346744B2 (ja) 2008-12-26 2013-11-20 ジルトロニック アクチエンゲゼルシャフト シリコンウエハ及びその製造方法
TWI428481B (zh) * 2009-12-29 2014-03-01 Siltronic Ag 矽晶圓及其製造方法
DE102010007460B4 (de) * 2010-02-10 2013-11-28 Siltronic Ag Verfahren zum Ziehen eines Einkristalls aus Silicium aus einer in einem Tiegel enthaltenen Schmelze und dadurch hergestellter Einkristall
JP5053426B2 (ja) * 2010-08-06 2012-10-17 ジルトロニック アクチエンゲゼルシャフト シリコン単結晶製造方法
ITTO20110335A1 (it) * 2011-04-14 2012-10-15 Consiglio Nazionale Ricerche Procedimento di formazione di cristalli massivi, in particolare monocristalli di fluoruri drogati con ioni di terre rare
US8839180B1 (en) * 2013-05-22 2014-09-16 International Business Machines Corporation Dielectric reliability assessment for advanced semiconductors
JP6052189B2 (ja) * 2014-01-16 2016-12-27 信越半導体株式会社 シリコン単結晶ウェーハの熱処理方法
CN105316767B (zh) * 2015-06-04 2019-09-24 上海超硅半导体有限公司 超大规模集成电路用硅片及其制造方法、应用
DE102015121890A1 (de) * 2015-12-15 2017-06-22 Infineon Technologies Ag Verfahren zum Prozessieren eines Halbleiterwafers
WO2017110763A1 (ja) * 2015-12-21 2017-06-29 株式会社Sumco シリカガラスルツボ、シリカガラスルツボの製造方法、シリコン単結晶の引き上げ装置、インゴットおよびホモエピタキシャルウェーハ
JP6536517B2 (ja) * 2016-09-07 2019-07-03 信越半導体株式会社 結晶欠陥評価方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0684925A (ja) * 1992-07-17 1994-03-25 Toshiba Corp 半導体基板およびその処理方法
JP3085146B2 (ja) 1995-05-31 2000-09-04 住友金属工業株式会社 シリコン単結晶ウェーハおよびその製造方法
US6485807B1 (en) * 1997-02-13 2002-11-26 Samsung Electronics Co., Ltd. Silicon wafers having controlled distribution of defects, and methods of preparing the same
US5994761A (en) * 1997-02-26 1999-11-30 Memc Electronic Materials Spa Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-less process therefor
CN1316072C (zh) * 1997-04-09 2007-05-16 Memc电子材料有限公司 低缺陷密度、理想氧沉淀的硅
KR20040065306A (ko) * 1997-04-09 2004-07-21 엠이엠씨 일렉트로닉 머티리얼즈 인코포레이티드 저결함 밀도의 베이컨시가 지배적인 실리콘의 제조 방법
EP0959154B1 (de) * 1998-05-22 2010-04-21 Shin-Etsu Handotai Co., Ltd Einkristalline epitaktische Siliciumscheibe und Verfahren zu ihrer Herstellung
JPH11349393A (ja) 1998-06-03 1999-12-21 Shin Etsu Handotai Co Ltd シリコン単結晶ウエーハおよびシリコン単結晶ウエーハの製造方法
KR20010053179A (ko) * 1998-06-26 2001-06-25 헨넬리 헬렌 에프 저결함밀도, 자기침입형 실리콘을 성장시키기 위한 결정풀러
JP2000058612A (ja) * 1998-08-10 2000-02-25 Mitsubishi Electric Corp 半導体素子の絶縁膜の評価方法
US6336968B1 (en) * 1998-09-02 2002-01-08 Memc Electronic Materials, Inc. Non-oxygen precipitating czochralski silicon wafers
WO2000013226A1 (en) * 1998-09-02 2000-03-09 Memc Electronic Materials, Inc. Process for preparing an ideal oxygen precipitating silicon wafer
TW505710B (en) * 1998-11-20 2002-10-11 Komatsu Denshi Kinzoku Kk Production method for silicon single crystal and production device for single crystal ingot, and heat treating method for silicon single crystal wafer
JP3644284B2 (ja) * 1999-01-14 2005-04-27 株式会社豊田中央研究所 経時絶縁破壊特性の予測方法及び予測装置
JP4089137B2 (ja) * 2000-06-22 2008-05-28 株式会社Ｓｕｍｃｏ シリコン単結晶の製造方法およびエピタキシャルウェーハの製造方法
US6835245B2 (en) 2000-06-22 2004-12-28 Sumitomo Mitsubishi Silicon Corporation Method of manufacturing epitaxial wafer and method of producing single crystal as material therefor
US6986925B2 (en) * 2001-01-02 2006-01-17 Memc Electronic Materials, Inc. Single crystal silicon having improved gate oxide integrity
EP1356139B1 (de) * 2001-01-26 2006-08-09 MEMC Electronic Materials, Inc. Silizium mit niedriger defektdichte und mit leerstellendominiertem kern, das im wesentlichen frei von oxidationsinduzierten stapelfehlern ist

Also Published As

Publication number Publication date
WO2002066714A3 (en) 2003-03-20
US7431765B2 (en) 2008-10-07
KR100708788B1 (ko) 2007-04-19
JP2008270823A (ja) 2008-11-06
US6986925B2 (en) 2006-01-17
JP2004525057A (ja) 2004-08-19
US20050160967A1 (en) 2005-07-28
EP1348048B1 (de) 2006-03-29
KR100708789B1 (ko) 2007-04-19
KR20060135079A (ko) 2006-12-28
CN1489643A (zh) 2004-04-14
WO2002066714A2 (en) 2002-08-29
US20020121238A1 (en) 2002-09-05
JP4554886B2 (ja) 2010-09-29
US20090022930A1 (en) 2009-01-22
EP1348048A2 (de) 2003-10-01
DE60210264T2 (de) 2006-08-24
KR20030076598A (ko) 2003-09-26

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