KR20060135079A - 향상된 게이트 산화물 완전도를 가지는 단결정 실리콘을준비하는 공정 - Google Patents
향상된 게이트 산화물 완전도를 가지는 단결정 실리콘을준비하는 공정 Download PDFInfo
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- KR20060135079A KR20060135079A KR1020067025485A KR20067025485A KR20060135079A KR 20060135079 A KR20060135079 A KR 20060135079A KR 1020067025485 A KR1020067025485 A KR 1020067025485A KR 20067025485 A KR20067025485 A KR 20067025485A KR 20060135079 A KR20060135079 A KR 20060135079A
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/203—Controlling or regulating the relationship of pull rate (v) to axial thermal gradient (G)
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/206—Controlling or regulating the thermal history of growing the ingot
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/21—Circular sheet or circular blank
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
Claims (8)
- 단결정 실리콘 웨이퍼들의 모집단의 게이트 산화물 완전도를 평가하는 방법에 있어서, 상기 방법은(i) 상기 모집단의 제1 하위 세트의 절연 파괴 특성을 상기 제1 하위 세트에 가해진 스트레스의 양의 함수로서 결정하는 단계 - 상기 스트레스의 양은 초기치로부터 최종치까지 제1 속도로 증가함 - ,(ii) 상기 모집단의 제2 하위 세트의 절연 파괴 특성을 상기 제2 하위 세트에 가해진 스트레스의 양의 함수로서 결정하는 단계 - 상기 스트레스의 양은 초기치로부터 최종치까지 제2 속도로 증가하며, 제2 속도는 상기 제1속도와는 상이함 -, 및(iii) 상기 모집단의 조건의 정의된 세트 하에서 게이트 산화물 실패율(gate oxide failure rate)을 예측하기 위하여, 단계 (i) 및 (ii)에서 결정된 상기 절연 파괴 특성들을 사용하는 단계를 포함하는 방법.
- 제1항에 있어서, 상기 하위 세트들 각각은 상기 모집단의 하나 이상의 웨이퍼의 전체 또는 일부를 포함하는 방법.
- 제1항에 있어서, 상기 하위 세트들 각각은 동일한 웨이퍼들의 일부를 포함하는 방법.
- 제1항에 있어서, 상기 하위 세트들 각각은 서로 다른 웨이퍼들의 일부를 포함하는 방법.
- 제1항에 있어서, 상기 하위 세트들 각각의 일부는 동일한 웨이퍼들의 일부를 포함하는 방법.
- 제1항 내지 제5항 중 어느 한 항에 있어서, 상기 절연 파괴 특성들은 웨이퍼들의 상기 모집단의 4개의 하위 세트들에 대해 결정되는 방법.
- 제1항 내지 제5항 중 어느 한 항에 있어서, 상기 하위세트들의 각각의 증가 속도는 다른 하위세트들의 증가 속도와 적어도 10배 이상 차이가 나는 방법.
- 제6항에 있어서, 상기 하위세트들의 각각의 증가 속도는 다른 하위세트들의 증가 속도와 적어도 10배 이상 차이가 나는 방법.
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US25936201P | 2001-01-02 | 2001-01-02 | |
US60/259,362 | 2001-01-02 |
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KR1020037008949A Division KR100708788B1 (ko) | 2001-01-02 | 2002-01-02 | 향상된 게이트 산화물 완전도를 가지는 단결정 실리콘을준비하는 공정 |
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KR20060135079A true KR20060135079A (ko) | 2006-12-28 |
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KR1020067025485A KR100708789B1 (ko) | 2001-01-02 | 2002-01-02 | 향상된 게이트 산화물 완전도를 가지는 단결정 실리콘을준비하는 공정 |
KR1020037008949A KR100708788B1 (ko) | 2001-01-02 | 2002-01-02 | 향상된 게이트 산화물 완전도를 가지는 단결정 실리콘을준비하는 공정 |
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US (3) | US6986925B2 (ko) |
EP (1) | EP1348048B1 (ko) |
JP (2) | JP4554886B2 (ko) |
KR (2) | KR100708789B1 (ko) |
CN (1) | CN1489643A (ko) |
DE (1) | DE60210264T2 (ko) |
WO (1) | WO2002066714A2 (ko) |
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JP4554886B2 (ja) * | 2001-01-02 | 2010-09-29 | エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド | 向上したゲート酸化物完全性を有する単結晶シリコンの製造方法 |
TWI265217B (en) * | 2002-11-14 | 2006-11-01 | Komatsu Denshi Kinzoku Kk | Method and device for manufacturing silicon wafer, method for manufacturing silicon single crystal, and device for pulling up silicon single crystal |
DE102005063516B4 (de) * | 2005-06-17 | 2014-05-22 | Siltronic Ag | Halbleiterscheibe aus Silizium mit agglomerierten Leerstellendefekten |
DE102005028202B4 (de) | 2005-06-17 | 2010-04-15 | Siltronic Ag | Verfahren zur Herstellung von Halbleiterscheiben aus Silizium |
JP4805681B2 (ja) * | 2006-01-12 | 2011-11-02 | ジルトロニック アクチエンゲゼルシャフト | エピタキシャルウェーハおよびエピタキシャルウェーハの製造方法 |
CN100383295C (zh) * | 2006-03-31 | 2008-04-23 | 浙江大学 | 直拉式晶体生长炉自动控制方法 |
CN103147122B (zh) * | 2006-05-19 | 2016-01-20 | Memc电子材料有限公司 | 控制cz生长过程中由硅单晶侧面诱发的附聚点缺陷和氧簇的形成 |
JP4513798B2 (ja) * | 2006-10-24 | 2010-07-28 | 信越半導体株式会社 | 単結晶製造装置及び単結晶の製造方法 |
US20090004426A1 (en) * | 2007-06-29 | 2009-01-01 | Memc Electronic Materials, Inc. | Suppression of Oxygen Precipitation in Heavily Doped Single Crystal Silicon Substrates |
US20090004458A1 (en) * | 2007-06-29 | 2009-01-01 | Memc Electronic Materials, Inc. | Diffusion Control in Heavily Doped Substrates |
JP4978396B2 (ja) * | 2007-09-19 | 2012-07-18 | 信越半導体株式会社 | エピタキシャルウェーハの製造方法 |
US8476149B2 (en) * | 2008-07-31 | 2013-07-02 | Global Wafers Japan Co., Ltd. | Method of manufacturing single crystal silicon wafer from ingot grown by Czocharlski process with rapid heating/cooling process |
JP5346744B2 (ja) | 2008-12-26 | 2013-11-20 | ジルトロニック アクチエンゲゼルシャフト | シリコンウエハ及びその製造方法 |
ATE545719T1 (de) * | 2009-12-29 | 2012-03-15 | Siltronic Ag | Siliciumwafer und herstellungsverfahren dafür |
DE102010007460B4 (de) * | 2010-02-10 | 2013-11-28 | Siltronic Ag | Verfahren zum Ziehen eines Einkristalls aus Silicium aus einer in einem Tiegel enthaltenen Schmelze und dadurch hergestellter Einkristall |
JP5053426B2 (ja) * | 2010-08-06 | 2012-10-17 | ジルトロニック アクチエンゲゼルシャフト | シリコン単結晶製造方法 |
ITTO20110335A1 (it) * | 2011-04-14 | 2012-10-15 | Consiglio Nazionale Ricerche | Procedimento di formazione di cristalli massivi, in particolare monocristalli di fluoruri drogati con ioni di terre rare |
US8839180B1 (en) * | 2013-05-22 | 2014-09-16 | International Business Machines Corporation | Dielectric reliability assessment for advanced semiconductors |
JP6052189B2 (ja) * | 2014-01-16 | 2016-12-27 | 信越半導体株式会社 | シリコン単結晶ウェーハの熱処理方法 |
CN105316767B (zh) * | 2015-06-04 | 2019-09-24 | 上海超硅半导体有限公司 | 超大规模集成电路用硅片及其制造方法、应用 |
DE102015121890A1 (de) * | 2015-12-15 | 2017-06-22 | Infineon Technologies Ag | Verfahren zum Prozessieren eines Halbleiterwafers |
TW201732221A (zh) * | 2015-12-21 | 2017-09-16 | Sumco股份有限公司 | 氧化矽玻璃坩堝的歪曲測量裝置、單晶矽的製造方法、氧化矽玻璃坩堝的歪曲測量方法、相位差圖、錠及同質外延晶圓 |
JP6536517B2 (ja) * | 2016-09-07 | 2019-07-03 | 信越半導体株式会社 | 結晶欠陥評価方法 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0684925A (ja) | 1992-07-17 | 1994-03-25 | Toshiba Corp | 半導体基板およびその処理方法 |
JP3085146B2 (ja) * | 1995-05-31 | 2000-09-04 | 住友金属工業株式会社 | シリコン単結晶ウェーハおよびその製造方法 |
US6485807B1 (en) * | 1997-02-13 | 2002-11-26 | Samsung Electronics Co., Ltd. | Silicon wafers having controlled distribution of defects, and methods of preparing the same |
US5994761A (en) | 1997-02-26 | 1999-11-30 | Memc Electronic Materials Spa | Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-less process therefor |
WO1998045507A1 (en) * | 1997-04-09 | 1998-10-15 | Memc Electronic Materials, Inc. | Low defect density, ideal oxygen precipitating silicon |
MY120036A (en) * | 1997-04-09 | 2005-08-30 | Memc Electronic Materials | Low defect density, self- interstitial dominated silicon. |
US6162708A (en) * | 1998-05-22 | 2000-12-19 | Shin-Etsu Handotai Co., Ltd. | Method for producing an epitaxial silicon single crystal wafer and the epitaxial silicon single crystal wafer |
JPH11349393A (ja) * | 1998-06-03 | 1999-12-21 | Shin Etsu Handotai Co Ltd | シリコン単結晶ウエーハおよびシリコン単結晶ウエーハの製造方法 |
WO2000000675A1 (en) * | 1998-06-26 | 2000-01-06 | Memc Electronic Materials, Inc. | Crystal puller for growing low defect density, self-interstitial dominated silicon |
JP2000058612A (ja) * | 1998-08-10 | 2000-02-25 | Mitsubishi Electric Corp | 半導体素子の絶縁膜の評価方法 |
DE69933777T2 (de) | 1998-09-02 | 2007-09-13 | Memc Electronic Materials, Inc. | Verfahren zur herstellung von einem silizium wafer mit idealem sauerstoffausfällungsverhalten |
US6336968B1 (en) | 1998-09-02 | 2002-01-08 | Memc Electronic Materials, Inc. | Non-oxygen precipitating czochralski silicon wafers |
TW505710B (en) * | 1998-11-20 | 2002-10-11 | Komatsu Denshi Kinzoku Kk | Production method for silicon single crystal and production device for single crystal ingot, and heat treating method for silicon single crystal wafer |
JP3644284B2 (ja) * | 1999-01-14 | 2005-04-27 | 株式会社豊田中央研究所 | 経時絶縁破壊特性の予測方法及び予測装置 |
US6835245B2 (en) * | 2000-06-22 | 2004-12-28 | Sumitomo Mitsubishi Silicon Corporation | Method of manufacturing epitaxial wafer and method of producing single crystal as material therefor |
JP4089137B2 (ja) * | 2000-06-22 | 2008-05-28 | 株式会社Sumco | シリコン単結晶の製造方法およびエピタキシャルウェーハの製造方法 |
JP4554886B2 (ja) * | 2001-01-02 | 2010-09-29 | エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド | 向上したゲート酸化物完全性を有する単結晶シリコンの製造方法 |
US6846539B2 (en) * | 2001-01-26 | 2005-01-25 | Memc Electronic Materials, Inc. | Low defect density silicon having a vacancy-dominated core substantially free of oxidation induced stacking faults |
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US20050160967A1 (en) | 2005-07-28 |
DE60210264D1 (de) | 2006-05-18 |
DE60210264T2 (de) | 2006-08-24 |
CN1489643A (zh) | 2004-04-14 |
EP1348048B1 (en) | 2006-03-29 |
WO2002066714A2 (en) | 2002-08-29 |
US6986925B2 (en) | 2006-01-17 |
US20090022930A1 (en) | 2009-01-22 |
KR20030076598A (ko) | 2003-09-26 |
JP2008270823A (ja) | 2008-11-06 |
WO2002066714A3 (en) | 2003-03-20 |
US20020121238A1 (en) | 2002-09-05 |
EP1348048A2 (en) | 2003-10-01 |
US7431765B2 (en) | 2008-10-07 |
KR100708789B1 (ko) | 2007-04-19 |
JP2004525057A (ja) | 2004-08-19 |
KR100708788B1 (ko) | 2007-04-19 |
JP4554886B2 (ja) | 2010-09-29 |
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