DE60210109D1 - Halbleiteranordnung mit weichen elektrischen anschlüssen, bauteil damit und seine herstellungsverfahren - Google Patents

Halbleiteranordnung mit weichen elektrischen anschlüssen, bauteil damit und seine herstellungsverfahren

Info

Publication number
DE60210109D1
DE60210109D1 DE60210109T DE60210109T DE60210109D1 DE 60210109 D1 DE60210109 D1 DE 60210109D1 DE 60210109 T DE60210109 T DE 60210109T DE 60210109 T DE60210109 T DE 60210109T DE 60210109 D1 DE60210109 D1 DE 60210109D1
Authority
DE
Germany
Prior art keywords
compliant
dielectric layer
bumps
electrically conductive
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60210109T
Other languages
English (en)
Other versions
DE60210109T2 (de
Inventor
A Lutz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dow Silicones Corp
Original Assignee
Dow Corning Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dow Corning Corp filed Critical Dow Corning Corp
Application granted granted Critical
Publication of DE60210109D1 publication Critical patent/DE60210109D1/de
Publication of DE60210109T2 publication Critical patent/DE60210109T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
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    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
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DE60210109T 2001-09-12 2002-08-12 Halbleitervorrichtung mit nachgiebigen elektrischen Anschlüssen, Einrichtung, die die Halbleitervorrichtung enthält und Verfahren zum Ausbilden der Vorrichtung Expired - Lifetime DE60210109T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US952337 1992-09-28
US09/952,337 US20030047339A1 (en) 2001-09-12 2001-09-12 Semiconductor device with compliant electrical terminals, apparatus including the semiconductor device, and methods for forming same
PCT/US2002/025427 WO2003023855A2 (en) 2001-09-12 2002-08-12 Semiconductor device with compliant electrical terminals, apparatus including the semiconductor device, and methods for forming same

Publications (2)

Publication Number Publication Date
DE60210109D1 true DE60210109D1 (de) 2006-05-11
DE60210109T2 DE60210109T2 (de) 2006-11-09

Family

ID=25492801

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60210109T Expired - Lifetime DE60210109T2 (de) 2001-09-12 2002-08-12 Halbleitervorrichtung mit nachgiebigen elektrischen Anschlüssen, Einrichtung, die die Halbleitervorrichtung enthält und Verfahren zum Ausbilden der Vorrichtung

Country Status (10)

Country Link
US (1) US20030047339A1 (de)
EP (1) EP1428256B1 (de)
JP (1) JP4771658B2 (de)
KR (1) KR100888712B1 (de)
AT (1) ATE321362T1 (de)
AU (1) AU2002326597A1 (de)
CA (1) CA2459386A1 (de)
DE (1) DE60210109T2 (de)
TW (1) TW569413B (de)
WO (1) WO2003023855A2 (de)

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US7294929B2 (en) * 2003-12-30 2007-11-13 Texas Instruments Incorporated Solder ball pad structure
US20090256256A1 (en) * 2008-04-11 2009-10-15 Infineon Technologies Ag Electronic Device and Method of Manufacturing Same
TWI462676B (zh) * 2009-02-13 2014-11-21 Senju Metal Industry Co The solder bumps for the circuit substrate are formed using the transfer sheet
US9293402B2 (en) 2012-04-13 2016-03-22 Lapis Semiconductor Co., Ltd. Device with pillar-shaped components
JP5128712B1 (ja) * 2012-04-13 2013-01-23 ラピスセミコンダクタ株式会社 半導体装置
JP2016184619A (ja) * 2015-03-25 2016-10-20 大日本印刷株式会社 多層配線構造体
JP2016184620A (ja) * 2015-03-25 2016-10-20 大日本印刷株式会社 多層配線構造体
JP2015167254A (ja) * 2015-05-21 2015-09-24 株式会社テラプローブ 半導体装置、その実装構造及びその製造方法
KR101897653B1 (ko) * 2017-03-06 2018-09-12 엘비세미콘 주식회사 컴플라이언트 범프의 제조방법
US10748850B2 (en) * 2018-03-15 2020-08-18 Semiconductor Components Industries, Llc Thinned semiconductor package and related methods
US11749616B2 (en) 2017-10-05 2023-09-05 Texas Instruments Incorporated Industrial chip scale package for microelectronic device
US10923365B2 (en) * 2018-10-28 2021-02-16 Richwave Technology Corp. Connection structure and method for forming the same

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Also Published As

Publication number Publication date
WO2003023855A2 (en) 2003-03-20
JP2005503020A (ja) 2005-01-27
US20030047339A1 (en) 2003-03-13
EP1428256A2 (de) 2004-06-16
ATE321362T1 (de) 2006-04-15
DE60210109T2 (de) 2006-11-09
EP1428256B1 (de) 2006-03-22
WO2003023855A3 (en) 2003-12-11
AU2002326597A1 (en) 2003-03-24
TW569413B (en) 2004-01-01
KR100888712B1 (ko) 2009-03-17
KR20040047822A (ko) 2004-06-05
CA2459386A1 (en) 2003-03-20
JP4771658B2 (ja) 2011-09-14

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