DE602006009896D1 - Halbleiterspeicher, Speichersystem und Betriebsverfahren für ein Speichersystem - Google Patents

Halbleiterspeicher, Speichersystem und Betriebsverfahren für ein Speichersystem

Info

Publication number
DE602006009896D1
DE602006009896D1 DE602006009896T DE602006009896T DE602006009896D1 DE 602006009896 D1 DE602006009896 D1 DE 602006009896D1 DE 602006009896 T DE602006009896 T DE 602006009896T DE 602006009896 T DE602006009896 T DE 602006009896T DE 602006009896 D1 DE602006009896 D1 DE 602006009896D1
Authority
DE
Germany
Prior art keywords
memory system
memory
operating method
semiconductor
semiconductor memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602006009896T
Other languages
English (en)
Inventor
Toshiya Uchida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Semiconductor Ltd
Original Assignee
Fujitsu Semiconductor Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Semiconductor Ltd filed Critical Fujitsu Semiconductor Ltd
Publication of DE602006009896D1 publication Critical patent/DE602006009896D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G11C11/40603—Arbitration, priority and concurrent access to memory cells for read/write or refresh operations
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G11C11/40615—Internal triggering or timing of refresh, e.g. hidden refresh, self refresh, pseudo-SRAMs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G11C11/40618—Refresh operations over multiple banks or interleaving
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
    • G11C7/1063—Control signal output circuits, e.g. status or busy flags, feedback command signals
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1072—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers for memories with random access ports synchronised on clock signal pulse trains, e.g. synchronous memories, self timed memories
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/12—Group selection circuits, e.g. for memory block selection, chip selection, array selection

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Theoretical Computer Science (AREA)
  • Databases & Information Systems (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Dram (AREA)
  • Memory System (AREA)
DE602006009896T 2006-03-17 2006-06-15 Halbleiterspeicher, Speichersystem und Betriebsverfahren für ein Speichersystem Active DE602006009896D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006074533A JP4772546B2 (ja) 2006-03-17 2006-03-17 半導体メモリ、メモリシステムおよびメモリシステムの動作方法

Publications (1)

Publication Number Publication Date
DE602006009896D1 true DE602006009896D1 (de) 2009-12-03

Family

ID=38180198

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602006009896T Active DE602006009896D1 (de) 2006-03-17 2006-06-15 Halbleiterspeicher, Speichersystem und Betriebsverfahren für ein Speichersystem

Country Status (6)

Country Link
US (1) US7483331B2 (de)
EP (1) EP1835506B1 (de)
JP (1) JP4772546B2 (de)
KR (1) KR100869984B1 (de)
CN (1) CN101038783B (de)
DE (1) DE602006009896D1 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7652922B2 (en) * 2005-09-30 2010-01-26 Mosaid Technologies Incorporated Multiple independent serial link memory
US7668040B2 (en) * 2006-12-22 2010-02-23 Fujitsu Microelectronics Limited Memory device, memory controller and memory system
FR2916066A1 (fr) * 2007-05-10 2008-11-14 Samsung Electronics Co Ltd Procede pour faire fonctionner un dispositif a memoire et dispositif electronique
KR100914265B1 (ko) 2007-05-10 2009-08-27 삼성전자주식회사 비휘발성 메모리 장치, 그것을 포함한 메모리 시스템 및그것의 읽기 방법
US7936639B2 (en) * 2007-09-27 2011-05-03 Micron Technology, Inc. System and method for processing signals in high speed DRAM
US8027192B2 (en) * 2008-08-20 2011-09-27 Samsung Electronics Co., Ltd. Resistive memory devices using assymetrical bitline charging and discharging
KR101416834B1 (ko) 2008-08-20 2014-07-08 삼성전자주식회사 저항체를 이용한 비휘발성 메모리 장치
FR2938670B1 (fr) * 2008-11-17 2012-02-10 Stmicroelectronics Crolles Sas Dispositif de controle de l'activite de modules d'un reseau de modules de memoire
US9824056B2 (en) 2009-11-05 2017-11-21 Rambus Inc. Handshake signaling for interface clock management
US8422315B2 (en) * 2010-07-06 2013-04-16 Winbond Electronics Corp. Memory chips and memory devices using the same
KR101989860B1 (ko) * 2012-12-21 2019-06-17 에스케이하이닉스 주식회사 메모리 컨트롤러 및 이를 포함하는 메모리 시스템
US9417685B2 (en) * 2013-01-07 2016-08-16 Micron Technology, Inc. Power management
KR102291639B1 (ko) 2015-07-13 2021-08-20 에스케이하이닉스 주식회사 레디 비지 신호를 출력하는 반도체 메모리 장치 및 그것을 포함하는 메모리 시스템
TWI734781B (zh) * 2016-05-20 2021-08-01 日商半導體能源研究所股份有限公司 半導體裝置、電子構件及電子裝置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6360285B1 (en) * 1994-06-30 2002-03-19 Compaq Computer Corporation Apparatus for determining memory bank availability in a computer system
JP3169878B2 (ja) 1998-01-05 2001-05-28 甲府日本電気株式会社 メモリ制御回路
JPH11283364A (ja) 1998-03-30 1999-10-15 Toshiba Corp マルチバンクｄｒａｍ及びこのマルチバンクｄｒａｍを備えたデータ処理システム
JP2001052495A (ja) 1999-06-03 2001-02-23 Toshiba Corp 半導体メモリ
FR2820874B1 (fr) * 2001-02-13 2003-05-30 St Microelectronics Sa Procede de gestion a acces aleatoire et rapide d'une memoire dram
JP2003263892A (ja) * 2002-03-11 2003-09-19 Toshiba Corp 半導体記憶装置
KR100541366B1 (ko) * 2002-07-19 2006-01-16 주식회사 하이닉스반도체 고속 데이터 억세스를 위한 디램
JP4127054B2 (ja) * 2003-01-14 2008-07-30 ソニー株式会社 半導体記憶装置
JP4511462B2 (ja) * 2003-06-30 2010-07-28 富士通セミコンダクター株式会社 半導体記憶装置
JP4062247B2 (ja) * 2003-12-11 2008-03-19 ソニー株式会社 半導体記憶装置

Also Published As

Publication number Publication date
CN101038783A (zh) 2007-09-19
EP1835506B1 (de) 2009-10-21
US20070217278A1 (en) 2007-09-20
EP1835506A1 (de) 2007-09-19
JP2007250121A (ja) 2007-09-27
JP4772546B2 (ja) 2011-09-14
KR100869984B1 (ko) 2008-11-21
US7483331B2 (en) 2009-01-27
KR20070094429A (ko) 2007-09-20
CN101038783B (zh) 2010-06-02

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: FUJITSU SEMICONDUCTOR LTD., YOKOHAMA, KANAGAWA, JP

8328 Change in the person/name/address of the agent

Representative=s name: SEEGER SEEGER LINDNER PARTNERSCHAFT PATENTANWAELTE