DE602006001972D1 - Silsesquioxan Mischung, Methode zu deren Herstellung, Resistzusammensetzung und Strukturierungsprozess - Google Patents
Silsesquioxan Mischung, Methode zu deren Herstellung, Resistzusammensetzung und StrukturierungsprozessInfo
- Publication number
- DE602006001972D1 DE602006001972D1 DE602006001972T DE602006001972T DE602006001972D1 DE 602006001972 D1 DE602006001972 D1 DE 602006001972D1 DE 602006001972 T DE602006001972 T DE 602006001972T DE 602006001972 T DE602006001972 T DE 602006001972T DE 602006001972 D1 DE602006001972 D1 DE 602006001972D1
- Authority
- DE
- Germany
- Prior art keywords
- preparation
- resist composition
- structuring process
- silsesquioxane mixture
- silsesquioxane
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title 2
- 239000000203 mixture Substances 0.000 title 2
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/08—Compounds having one or more C—Si linkages
- C07F7/18—Compounds having one or more C—Si linkages as well as one or more C—O—Si linkages
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/045—Polysiloxanes containing less than 25 silicon atoms
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
- H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/312—Organic layers, e.g. photoresist
- H01L21/3121—Layers comprising organo-silicon compounds
- H01L21/3122—Layers comprising organo-silicon compounds layers comprising polysiloxane compounds
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Silicon Polymers (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005105783 | 2005-04-01 | ||
JP2005105795 | 2005-04-01 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE602006001972D1 true DE602006001972D1 (de) | 2008-09-11 |
Family
ID=36660669
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE602006001972T Active DE602006001972D1 (de) | 2005-04-01 | 2006-03-31 | Silsesquioxan Mischung, Methode zu deren Herstellung, Resistzusammensetzung und Strukturierungsprozess |
Country Status (6)
Country | Link |
---|---|
US (2) | US7265234B2 (de) |
EP (1) | EP1707589B1 (de) |
JP (1) | JP4775561B2 (de) |
KR (1) | KR100889217B1 (de) |
DE (1) | DE602006001972D1 (de) |
TW (1) | TWI327587B (de) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7906180B2 (en) * | 2004-02-27 | 2011-03-15 | Molecular Imprints, Inc. | Composition for an etching mask comprising a silicon-containing material |
US20060081557A1 (en) | 2004-10-18 | 2006-04-20 | Molecular Imprints, Inc. | Low-k dielectric functional imprinting materials |
JP4636242B2 (ja) * | 2005-04-21 | 2011-02-23 | 信越化学工業株式会社 | 光半導体素子封止材及び光半導体素子 |
JP4602842B2 (ja) * | 2005-06-07 | 2010-12-22 | 東京応化工業株式会社 | 反射防止膜形成用組成物、それを用いた反射防止膜 |
JP4946169B2 (ja) * | 2006-05-15 | 2012-06-06 | Jnc株式会社 | シルセスキオキサン骨格を有する酸無水物および重合体 |
JP4509080B2 (ja) * | 2006-09-28 | 2010-07-21 | 信越化学工業株式会社 | シルセスキオキサン系化合物混合物及び加水分解性シラン化合物、その製造方法及びそれを用いたレジスト組成物並びにパターン形成方法及び基板の加工方法 |
US8809458B2 (en) * | 2006-12-01 | 2014-08-19 | Kaneka Corporation | Polysiloxane composition |
US7857905B2 (en) * | 2007-03-05 | 2010-12-28 | Momentive Performance Materials Inc. | Flexible thermal cure silicone hardcoats |
US8765112B2 (en) * | 2007-04-19 | 2014-07-01 | University Of Massachusetts | Thermal responsive polymer siloxanes, compositions, and method and applications related thereto |
JP4637209B2 (ja) | 2007-06-05 | 2011-02-23 | 富士フイルム株式会社 | ポジ型感光性樹脂組成物及びそれを用いた硬化膜形成方法 |
KR101260945B1 (ko) * | 2007-07-09 | 2013-05-06 | 삼성전자주식회사 | 실록산 폴리머 조성물 및 이를 이용한 커패시터 제조 방법 |
WO2009069465A1 (ja) * | 2007-11-30 | 2009-06-04 | Showa Denko K.K. | 転写材料用硬化性組成物および該組成物を用いた微細パターン形成方法 |
JP5158370B2 (ja) * | 2008-02-14 | 2013-03-06 | 信越化学工業株式会社 | ダブルパターン形成方法 |
US8415010B2 (en) * | 2008-10-20 | 2013-04-09 | Molecular Imprints, Inc. | Nano-imprint lithography stack with enhanced adhesion between silicon-containing and non-silicon containing layers |
EP2456811A4 (de) | 2009-07-23 | 2013-10-02 | Dow Corning | Verfahren und materialien für umgekehrte musterung |
JP5773131B2 (ja) * | 2011-03-02 | 2015-09-02 | 荒川化学工業株式会社 | チオール基含有シルセスキオキサンの製造方法ならびにチオール基含有シルセスキオキサンを含む硬化性樹脂組成物、当該硬化物、およびこれらから誘導される各種物品 |
KR101501015B1 (ko) * | 2012-12-13 | 2015-03-10 | 한국생산기술연구원 | 이산화탄소 용매를 이용한 폴리실세스퀴옥산의 제조방법 및 이를 이용하여 제조된 폴리실세스퀴옥산. |
KR101517856B1 (ko) * | 2013-12-19 | 2015-05-06 | 한국생산기술연구원 | 이산화탄소 용매와 유기 용매를 공용매로 이용한 폴리실세스퀴옥산의 제조방법 및 이를 이용하여 제조된 폴리실세스퀴옥산. |
US9703202B2 (en) * | 2015-03-31 | 2017-07-11 | Tokyo Ohka Kogyo Co., Ltd. | Surface treatment process and surface treatment liquid |
JPWO2017056888A1 (ja) * | 2015-09-30 | 2018-08-09 | 富士フイルム株式会社 | パターン形成方法、及び、感活性光線性又は感放射線性樹脂組成物 |
KR102505090B1 (ko) * | 2016-02-24 | 2023-03-02 | 닛산 가가쿠 가부시키가이샤 | 실리콘 함유 패턴반전용 피복제 |
KR20210148133A (ko) * | 2019-03-29 | 2021-12-07 | 다이니폰 인사츠 가부시키가이샤 | 임프린트용 광경화성 수지 조성물, 임프린트용 광경화성 수지 조성물의 제조 방법 및 패턴 형성체의 제조 방법 |
CN116041706A (zh) * | 2022-12-30 | 2023-05-02 | 中国科学院广州能源研究所 | 一种微球型水合物抑制剂及其应用 |
Family Cites Families (25)
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JPS531000B2 (de) * | 1974-04-22 | 1978-01-13 | ||
US4130599A (en) | 1975-05-19 | 1978-12-19 | General Electric Company | Silanol-free resins |
JP2900699B2 (ja) | 1992-05-13 | 1999-06-02 | 松下電器産業株式会社 | 表示制御装置 |
JP3942201B2 (ja) * | 1994-11-18 | 2007-07-11 | 株式会社カネカ | フェニルポリシルセスキオキサンの製造方法 |
JP3830183B2 (ja) | 1995-09-29 | 2006-10-04 | 東京応化工業株式会社 | オキシムスルホネート化合物及びレジスト用酸発生剤 |
JP3587413B2 (ja) | 1995-12-20 | 2004-11-10 | 東京応化工業株式会社 | 化学増幅型レジスト組成物及びそれに用いる酸発生剤 |
JP3798458B2 (ja) | 1996-02-02 | 2006-07-19 | 東京応化工業株式会社 | オキシムスルホネート化合物及びレジスト用酸発生剤 |
JP3879139B2 (ja) | 1996-05-08 | 2007-02-07 | 住友化学株式会社 | グリオキシム系エステル、その製法および用途 |
SG78412A1 (en) | 1999-03-31 | 2001-02-20 | Ciba Sc Holding Ag | Oxime derivatives and the use thereof as latent acids |
JP2000334881A (ja) * | 1999-05-28 | 2000-12-05 | Konica Corp | かご状シルセスキオキサン含有皮膜 |
US6911518B2 (en) | 1999-12-23 | 2005-06-28 | Hybrid Plastics, Llc | Polyhedral oligomeric -silsesquioxanes, -silicates and -siloxanes bearing ring-strained olefinic functionalities |
US6972312B1 (en) | 1999-08-04 | 2005-12-06 | Hybrid Plastics Llc | Process for the formation of polyhedral oligomeric silsesquioxanes |
DE60031134T2 (de) * | 1999-08-04 | 2007-08-16 | Hybrid Plastics, Fountain Valley | Verfahren zur herstellung polyhedrischer oligomerer silsesquioxane |
DE10156619A1 (de) * | 2001-11-17 | 2003-05-28 | Creavis Tech & Innovation Gmbh | Verfahren zur Herstellung funktionalisierter oligomerer Silasesquioxane sowie deren Verwendung |
JP4079314B2 (ja) * | 2002-07-22 | 2008-04-23 | 旭化成ケミカルズ株式会社 | シルセスキオキサン化合物の製造方法 |
JP2004107277A (ja) * | 2002-09-19 | 2004-04-08 | Jsr Corp | ノルボルネン系化合物、ケイ素含有化合物、ポリシロキサンおよび感放射線性樹脂組成物 |
JP4256756B2 (ja) * | 2002-09-30 | 2009-04-22 | 新日鐵化学株式会社 | 官能基を有するかご型シルセスキオキサン樹脂の製造方法 |
US7041748B2 (en) * | 2003-01-08 | 2006-05-09 | International Business Machines Corporation | Patternable low dielectric constant materials and their use in ULSI interconnection |
JP4032249B2 (ja) * | 2003-05-09 | 2008-01-16 | 信越化学工業株式会社 | 高分子化合物及びポジ型レジスト材料並びにこれを用いたパターン形成方法 |
JP2004354417A (ja) * | 2003-05-27 | 2004-12-16 | Shin Etsu Chem Co Ltd | ポジ型レジスト材料並びにこれを用いたパターン形成方法 |
JP2006045516A (ja) * | 2004-06-28 | 2006-02-16 | Asahi Kasei Corp | 含シルセスキオキサン化合物 |
JP4409397B2 (ja) * | 2004-09-27 | 2010-02-03 | 新日鐵化学株式会社 | シリコーン樹脂組成物及び成形体 |
JP2006268037A (ja) * | 2005-02-28 | 2006-10-05 | Chisso Corp | シルセスキオキサン誘導体からなる重合体を素材とする光導波路 |
JP4682644B2 (ja) * | 2005-02-28 | 2011-05-11 | チッソ株式会社 | シリコーン樹脂成型体用ワニス及びシリコーン樹脂成型体 |
JP5082258B2 (ja) * | 2005-02-28 | 2012-11-28 | Jnc株式会社 | カゴ型ケイ素骨格を有する有機ケイ素化合物及び高分子化合物 |
-
2006
- 2006-03-27 JP JP2006084411A patent/JP4775561B2/ja active Active
- 2006-03-31 EP EP06251845A patent/EP1707589B1/de not_active Expired - Fee Related
- 2006-03-31 TW TW095111589A patent/TWI327587B/zh active
- 2006-03-31 US US11/393,911 patent/US7265234B2/en active Active
- 2006-03-31 DE DE602006001972T patent/DE602006001972D1/de active Active
- 2006-03-31 KR KR1020060029555A patent/KR100889217B1/ko not_active IP Right Cessation
-
2007
- 2007-08-03 US US11/882,664 patent/US20080038664A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
EP1707589B1 (de) | 2008-07-30 |
KR100889217B1 (ko) | 2009-03-16 |
JP2006307180A (ja) | 2006-11-09 |
KR20060105652A (ko) | 2006-10-11 |
TW200704712A (en) | 2007-02-01 |
JP4775561B2 (ja) | 2011-09-21 |
US7265234B2 (en) | 2007-09-04 |
US20080038664A1 (en) | 2008-02-14 |
TWI327587B (en) | 2010-07-21 |
EP1707589A1 (de) | 2006-10-04 |
US20060224009A1 (en) | 2006-10-05 |
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Legal Events
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8364 | No opposition during term of opposition |