DE602005001994D1 - Verfahren zum Entwurf einer Beleuchtungsquelle, Verfahren zum Entwurf einer Maskenstruktur, Verfahren zur Herstellung einer Photomaske, Verfahren zur Herstellung eines Halbleiterbauelements und Computerprogrammprodukt - Google Patents

Verfahren zum Entwurf einer Beleuchtungsquelle, Verfahren zum Entwurf einer Maskenstruktur, Verfahren zur Herstellung einer Photomaske, Verfahren zur Herstellung eines Halbleiterbauelements und Computerprogrammprodukt

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Publication number
DE602005001994D1
DE602005001994D1 DE602005001994T DE602005001994T DE602005001994D1 DE 602005001994 D1 DE602005001994 D1 DE 602005001994D1 DE 602005001994 T DE602005001994 T DE 602005001994T DE 602005001994 T DE602005001994 T DE 602005001994T DE 602005001994 D1 DE602005001994 D1 DE 602005001994D1
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DE
Germany
Prior art keywords
designing
manufacturing
photomask
semiconductor device
computer program
Prior art date
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Active
Application number
DE602005001994T
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English (en)
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DE602005001994T2 (de
Inventor
Kazuya Fukuhara
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Toshiba Corp
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Toshiba Corp
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Publication of DE602005001994D1 publication Critical patent/DE602005001994D1/de
Application granted granted Critical
Publication of DE602005001994T2 publication Critical patent/DE602005001994T2/de
Active legal-status Critical Current
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/701—Off-axis setting using an aperture
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70566—Polarisation control

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
DE602005001994T 2004-08-24 2005-08-23 Verfahren zum Entwurf einer Beleuchtungsquelle, Verfahren zum Entwurf einer Maskenstruktur, Verfahren zur Herstellung einer Photomaske, Verfahren zur Herstellung eines Halbleiterbauelements und Computerprogrammprodukt Active DE602005001994T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004243874A JP4528580B2 (ja) 2004-08-24 2004-08-24 照明光源の設計方法、マスクパターン設計方法、フォトマスクの製造方法、半導体装置の製造方法、及びプログラム
JP2004243874 2004-08-24

Publications (2)

Publication Number Publication Date
DE602005001994D1 true DE602005001994D1 (de) 2007-09-27
DE602005001994T2 DE602005001994T2 (de) 2008-05-08

Family

ID=35285551

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602005001994T Active DE602005001994T2 (de) 2004-08-24 2005-08-23 Verfahren zum Entwurf einer Beleuchtungsquelle, Verfahren zum Entwurf einer Maskenstruktur, Verfahren zur Herstellung einer Photomaske, Verfahren zur Herstellung eines Halbleiterbauelements und Computerprogrammprodukt

Country Status (4)

Country Link
US (1) US7386830B2 (de)
EP (1) EP1630614B1 (de)
JP (1) JP4528580B2 (de)
DE (1) DE602005001994T2 (de)

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US8576377B2 (en) 2006-12-28 2013-11-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
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US8028252B2 (en) * 2007-09-14 2011-09-27 Luminescent Technologies Inc. Technique for determining mask patterns and write patterns
JP2009071125A (ja) * 2007-09-14 2009-04-02 Canon Inc 露光条件を決定する方法及びプログラム
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JP5686567B2 (ja) * 2010-10-19 2015-03-18 キヤノン株式会社 露光条件及びマスクパターンを決定するプログラム及び方法
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Also Published As

Publication number Publication date
US7386830B2 (en) 2008-06-10
US20060046168A1 (en) 2006-03-02
JP4528580B2 (ja) 2010-08-18
EP1630614A1 (de) 2006-03-01
DE602005001994T2 (de) 2008-05-08
JP2006066440A (ja) 2006-03-09
EP1630614B1 (de) 2007-08-15

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