DE602006001193D1 - Herstellungsverfahren für eine Fotomaske und Herstellungsverfahren für eine Vorrichtung - Google Patents

Herstellungsverfahren für eine Fotomaske und Herstellungsverfahren für eine Vorrichtung

Info

Publication number
DE602006001193D1
DE602006001193D1 DE602006001193T DE602006001193T DE602006001193D1 DE 602006001193 D1 DE602006001193 D1 DE 602006001193D1 DE 602006001193 T DE602006001193 T DE 602006001193T DE 602006001193 T DE602006001193 T DE 602006001193T DE 602006001193 D1 DE602006001193 D1 DE 602006001193D1
Authority
DE
Germany
Prior art keywords
manufacturing
photomask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602006001193T
Other languages
English (en)
Inventor
Koji Hosono
Yukihiro Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Semiconductor Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of DE602006001193D1 publication Critical patent/DE602006001193D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/44—Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
DE602006001193T 2005-12-14 2006-03-23 Herstellungsverfahren für eine Fotomaske und Herstellungsverfahren für eine Vorrichtung Active DE602006001193D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005360526A JP4843304B2 (ja) 2005-12-14 2005-12-14 フォトマスクの製造方法、デバイスの製造方法、及び、フォトマスクのモニタ方法

Publications (1)

Publication Number Publication Date
DE602006001193D1 true DE602006001193D1 (de) 2008-06-26

Family

ID=36499574

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602006001193T Active DE602006001193D1 (de) 2005-12-14 2006-03-23 Herstellungsverfahren für eine Fotomaske und Herstellungsverfahren für eine Vorrichtung

Country Status (7)

Country Link
US (1) US7666553B2 (de)
EP (1) EP1798595B1 (de)
JP (1) JP4843304B2 (de)
KR (1) KR100782489B1 (de)
CN (1) CN1983025B (de)
DE (1) DE602006001193D1 (de)
TW (1) TWI322328B (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8420891B2 (en) 2007-06-21 2013-04-16 National University Corporation Nagoya University Method for introducing foreign substance into cell having cell wall
US7812370B2 (en) 2007-07-25 2010-10-12 Taiwan Semiconductor Manufacturing Company, Ltd. Tunnel field-effect transistor with narrow band-gap channel and strong gate coupling
JP2009128618A (ja) * 2007-11-22 2009-06-11 Fujitsu Microelectronics Ltd フォトマスク及びその製造方法
KR100980060B1 (ko) 2008-06-20 2010-09-03 주식회사 하이닉스반도체 포토마스크 검사방법
US7834345B2 (en) * 2008-09-05 2010-11-16 Taiwan Semiconductor Manufacturing Company, Ltd. Tunnel field-effect transistors with superlattice channels
US8587075B2 (en) * 2008-11-18 2013-11-19 Taiwan Semiconductor Manufacturing Company, Ltd. Tunnel field-effect transistor with metal source
JP5666218B2 (ja) * 2009-10-06 2015-02-12 Hoya株式会社 マスクブランク、転写用マスク、および転写用マスクセット
TW201113631A (en) * 2009-10-14 2011-04-16 Evervision Electronics Co Ltd Improved light mask manufacturing process
JP5573306B2 (ja) * 2010-03-31 2014-08-20 凸版印刷株式会社 フォトマスクブランクの製造方法
JP5154626B2 (ja) * 2010-09-30 2013-02-27 Ｈｏｙａ株式会社 マスクブランク、転写用マスク、転写用マスクの製造方法、および半導体デバイスの製造方法
CN102509726A (zh) * 2011-11-14 2012-06-20 上海宏力半导体制造有限公司 具有加密结构的ip模块及其制造方法
KR102145884B1 (ko) 2012-12-24 2020-08-20 삼성디스플레이 주식회사 레티클, 이를 포함하는 노광 장치, 및 노광 방법
JP6189242B2 (ja) * 2014-03-28 2017-08-30 Hoya株式会社 フォトマスクの製造方法、フォトマスク及び表示装置の製造方法
KR102606308B1 (ko) * 2016-06-28 2023-11-24 삼성전자주식회사 포토 마스크의 제조 방법, 패턴 형성 방법 및 반도체 장치의 제조 방법
KR102504179B1 (ko) * 2017-12-21 2023-02-28 에스케이하이닉스 주식회사 쉐이딩층을 내장한 포토 마스크 및 이를 이용한 패턴 형성 방법
JP7214593B2 (ja) * 2019-08-13 2023-01-30 キオクシア株式会社 フォトマスクの製造方法
JP7547305B2 (ja) 2021-11-11 2024-09-09 信越化学工業株式会社 フォトマスクブランク、フォトマスクの製造方法及びフォトマスク

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100215850B1 (ko) 1996-04-12 1999-08-16 구본준 하프톤 위상 반전 마스크 및_그제조방법
US6440613B1 (en) 1999-09-02 2002-08-27 Micron Technology, Inc. Method of fabricating attenuated phase shift mask
JP3715189B2 (ja) 2000-09-21 2005-11-09 株式会社ルネサステクノロジ 位相シフトマスク
JP4053723B2 (ja) 2000-09-27 2008-02-27 株式会社東芝 露光用マスクの製造方法
JP2002323746A (ja) * 2001-04-24 2002-11-08 Matsushita Electric Ind Co Ltd 位相シフトマスク及び、それを用いたホールパターン形成方法
JP3650055B2 (ja) * 2001-10-12 2005-05-18 Ｈｏｙａ株式会社 ハーフトーン型位相シフトマスクの修正方法
JP2003344987A (ja) 2002-05-24 2003-12-03 Sony Corp 位相シフトマスクのひさし量測定方法
JP3793147B2 (ja) * 2002-12-04 2006-07-05 株式会社東芝 レチクルセット、レチクルセットの設計方法、露光モニタ方法、レチクルセットの検査方法及び半導体装置の製造方法
JP2004212482A (ja) 2002-12-27 2004-07-29 Fujitsu Ltd フォトマスクの製造方法
JP4450743B2 (ja) * 2005-02-08 2010-04-14 富士通マイクロエレクトロニクス株式会社 フォトマスク、フォトマスクの製造方法及び半導体装置の製造方法

Also Published As

Publication number Publication date
US20070134562A1 (en) 2007-06-14
US7666553B2 (en) 2010-02-23
EP1798595B1 (de) 2008-05-14
KR100782489B1 (ko) 2007-12-05
TWI322328B (en) 2010-03-21
CN1983025B (zh) 2011-07-27
EP1798595A1 (de) 2007-06-20
JP2007163867A (ja) 2007-06-28
CN1983025A (zh) 2007-06-20
TW200722929A (en) 2007-06-16
KR20070063397A (ko) 2007-06-19
JP4843304B2 (ja) 2011-12-21

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Legal Events

Date Code Title Description
8327 Change in the person/name/address of the patent owner

Owner name: FUJITSU MICROELECTRONICS LTD., TOKYO, JP

8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: FUJITSU SEMICONDUCTOR LTD., YOKOHAMA, KANAGAWA, JP