DE602004032015D1 - Verfahren zur herstellung eines kupferlegierungssputtertargets - Google Patents

Verfahren zur herstellung eines kupferlegierungssputtertargets

Info

Publication number
DE602004032015D1
DE602004032015D1 DE602004032015T DE602004032015T DE602004032015D1 DE 602004032015 D1 DE602004032015 D1 DE 602004032015D1 DE 602004032015 T DE602004032015 T DE 602004032015T DE 602004032015 T DE602004032015 T DE 602004032015T DE 602004032015 D1 DE602004032015 D1 DE 602004032015D1
Authority
DE
Germany
Prior art keywords
producing
copper alloy
sputter target
alloy sputter
target
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE602004032015T
Other languages
English (en)
Inventor
Takeo Okabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Mining Holdings Inc
Eneos Corp
Original Assignee
Nippon Mining and Metals Co Ltd
Nippon Mining Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Mining and Metals Co Ltd, Nippon Mining Co Ltd filed Critical Nippon Mining and Metals Co Ltd
Publication of DE602004032015D1 publication Critical patent/DE602004032015D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C22C9/01—Alloys based on copper with aluminium as the next major constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
DE602004032015T 2003-03-17 2004-02-19 Verfahren zur herstellung eines kupferlegierungssputtertargets Expired - Lifetime DE602004032015D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003071721 2003-03-17
PCT/JP2004/001914 WO2004083482A1 (ja) 2003-03-17 2004-02-19 銅合金スパッタリングターゲット及びその製造方法並びに半導体素子配線

Publications (1)

Publication Number Publication Date
DE602004032015D1 true DE602004032015D1 (de) 2011-05-12

Family

ID=33027699

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004032015T Expired - Lifetime DE602004032015D1 (de) 2003-03-17 2004-02-19 Verfahren zur herstellung eines kupferlegierungssputtertargets

Country Status (8)

Country Link
US (2) US7740721B2 (de)
EP (2) EP2264215A3 (de)
JP (1) JP4223511B2 (de)
KR (1) KR100700885B1 (de)
CN (1) CN100439558C (de)
DE (1) DE602004032015D1 (de)
TW (1) TWI248468B (de)
WO (1) WO2004083482A1 (de)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2465969B1 (de) * 2002-01-30 2016-05-11 JX Nippon Mining & Metals Corp. Sputtertarget aus kupferlegierung
JP4794802B2 (ja) 2002-11-21 2011-10-19 Ｊｘ日鉱日石金属株式会社 銅合金スパッタリングターゲット及び半導体素子配線
WO2005041290A1 (ja) * 2003-10-24 2005-05-06 Nikko Materials Co., Ltd. ニッケル合金スパッタリングターゲット及びニッケル合金薄膜
EP1715077A4 (de) * 2003-12-25 2010-09-29 Nippon Mining Co Anordnung aus kupfer- oder kupferlegierungstarget und kupferlegierungsträgerplatte
JP4377788B2 (ja) 2004-09-27 2009-12-02 株式会社神戸製鋼所 半導体配線用Ｃｕ合金、Ｃｕ合金配線の製法、該製法で得られたＣｕ合金配線を有する半導体装置、並びに半導体のＣｕ合金配線形成用スパッタリングターゲット
JP4330517B2 (ja) * 2004-11-02 2009-09-16 株式会社神戸製鋼所 Ｃｕ合金薄膜およびＣｕ合金スパッタリングターゲット並びにフラットパネルディスプレイ
EP1895024A4 (de) * 2005-06-23 2009-12-23 Nippon Mining Co Kupferfolie für leiterplatte
JP4756458B2 (ja) * 2005-08-19 2011-08-24 三菱マテリアル株式会社 パーティクル発生の少ないＭｎ含有銅合金スパッタリングターゲット
US7749361B2 (en) * 2006-06-02 2010-07-06 Applied Materials, Inc. Multi-component doping of copper seed layer
EP2051287A4 (de) 2006-08-10 2014-05-21 Ulvac Inc Verfahren zur bildung eines leitfähigen films, dünnfilmtransistor, panel mit dünnfilmtransistor und verfahren zur herstellung eines dünnfilmtransistors
KR20090051267A (ko) * 2006-09-08 2009-05-21 토소우 에스엠디, 인크 미세 그레인 사이즈 및 높은 전자 이동 저항성을 구비한 구리 스퍼터링 타겟 및 이를 제조하는 방법
CN101473059B (zh) * 2006-10-03 2013-03-20 Jx日矿日石金属株式会社 Cu-Mn合金溅射靶及半导体布线
US20090065354A1 (en) * 2007-09-12 2009-03-12 Kardokus Janine K Sputtering targets comprising a novel manufacturing design, methods of production and uses thereof
WO2010038641A1 (ja) 2008-09-30 2010-04-08 日鉱金属株式会社 高純度銅及び電解による高純度銅の製造方法
CN102165093B (zh) 2008-09-30 2013-09-25 Jx日矿日石金属株式会社 高纯度铜或高纯度铜合金溅射靶、该溅射靶的制造方法及高纯度铜或高纯度铜合金溅射膜
JP5118618B2 (ja) * 2008-12-24 2013-01-16 Ｊｘ日鉱日石金属株式会社 高純度形状記憶合金ターゲット及び同合金薄膜
JP5463794B2 (ja) * 2009-08-24 2014-04-09 三菱マテリアル株式会社 半導体装置及びその製造方法
JP2012149294A (ja) * 2011-01-18 2012-08-09 Hitachi Cable Ltd スパッタリングターゲット、半導体装置および半導体装置の製造方法
JP5708315B2 (ja) * 2011-07-05 2015-04-30 三菱マテリアル株式会社 銅合金製スパッタリングターゲット
KR20140016996A (ko) * 2011-09-14 2014-02-10 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 고순도 구리망간 합금 스퍼터링 타깃
KR20130121199A (ko) * 2011-09-14 2013-11-05 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 고순도 구리망간 합금 스퍼터링 타깃
EP2733235B1 (de) 2011-09-30 2017-05-03 JX Nippon Mining & Metals Corporation Sputtertarget und herstellungsverfahren dafür
CN104066868B (zh) 2012-01-23 2016-09-28 吉坤日矿日石金属株式会社 高纯度铜锰合金溅射靶
US10297429B2 (en) 2012-01-25 2019-05-21 Jx Nippon Mining & Metals Corporation High-purity copper-chromium alloy sputtering target
CN104781447B (zh) 2013-03-07 2017-10-24 吉坤日矿日石金属株式会社 铜合金溅射靶
JP2015195282A (ja) * 2014-03-31 2015-11-05 東京エレクトロン株式会社 成膜方法、半導体製造方法及び半導体装置
JP5783293B1 (ja) * 2014-04-22 2015-09-24 三菱マテリアル株式会社 円筒型スパッタリングターゲット用素材
CN107109633B (zh) 2015-05-21 2020-08-11 捷客斯金属株式会社 铜合金溅射靶及其制造方法
CN105463244A (zh) * 2015-12-15 2016-04-06 苏州华安矿业科技有限公司 矿用多孔喷头
US10760156B2 (en) 2017-10-13 2020-09-01 Honeywell International Inc. Copper manganese sputtering target
US11035036B2 (en) 2018-02-01 2021-06-15 Honeywell International Inc. Method of forming copper alloy sputtering targets with refined shape and microstructure
CN115261655A (zh) * 2022-08-01 2022-11-01 宁波江丰电子材料股份有限公司 一种超高纯CuAl合金及其制备方法与用途

Family Cites Families (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4923127A (de) 1972-06-26 1974-03-01
JPS61231131A (ja) 1985-04-05 1986-10-15 Kobe Steel Ltd 耐食性銅合金管
US4822560A (en) * 1985-10-10 1989-04-18 The Furukawa Electric Co., Ltd. Copper alloy and method of manufacturing the same
JPS6345338A (ja) 1986-04-10 1988-02-26 Furukawa Electric Co Ltd:The 電子電気機器用銅合金とその製造法
JPH0653901B2 (ja) 1986-09-08 1994-07-20 古河電気工業株式会社 電子電気機器用銅合金
JPS6442592A (en) * 1987-08-11 1989-02-14 Hitachi Cable Production of copper oxide powder by electrolysis
JPS6460633A (en) * 1987-08-31 1989-03-07 Tokuyama Soda Kk Coating material
JPH0196374A (ja) * 1987-10-05 1989-04-14 Tanaka Kikinzoku Kogyo Kk スパッタリング用クラッドターゲット材
JPH01180976A (ja) * 1988-01-12 1989-07-18 Tanaka Kikinzoku Kogyo Kk スパッタリング用バッキングプレート
JP2511289B2 (ja) * 1988-03-30 1996-06-26 株式会社日立製作所 半導体装置
JP2726939B2 (ja) * 1989-03-06 1998-03-11 日鉱金属 株式会社 加工性，耐熱性の優れた高導電性銅合金
JP2862727B2 (ja) 1992-05-12 1999-03-03 同和鉱業株式会社 金属薄膜形成用スパッタリング・ターゲット並びにその製造方法
JPH06177117A (ja) * 1992-12-07 1994-06-24 Japan Energy Corp スパッタターゲットとこれを使用する半導体装置の製造方法
EP0601509A1 (de) 1992-12-07 1994-06-15 Nikko Kyodo Co., Ltd. Halbleiteranordnungen und Herstellungsverfahren
KR100365807B1 (ko) * 1994-02-17 2003-05-12 유나이티드 테크놀로지스 코포레이션 티타늄합금의산화방지를위한코팅방법및내산화성구조체
DE19525330C2 (de) * 1995-07-12 1998-07-09 Glyco Metall Werke Schichtwerkstoff
JP3819487B2 (ja) 1996-08-16 2006-09-06 同和鉱業株式会社 半導体素子の製造方法
US6387805B2 (en) * 1997-05-08 2002-05-14 Applied Materials, Inc. Copper alloy seed layer for copper metallization
JP3403918B2 (ja) * 1997-06-02 2003-05-06 株式会社ジャパンエナジー 高純度銅スパッタリングタ−ゲットおよび薄膜
JPH10330927A (ja) 1997-06-05 1998-12-15 Riyouka Massey Kk アルミニウム合金製スパッタリングターゲット材
JP3975414B2 (ja) 1997-11-28 2007-09-12 日立金属株式会社 スパッタリング用銅ターゲットおよびその製造方法
JP2000087158A (ja) 1998-09-11 2000-03-28 Furukawa Electric Co Ltd:The 半導体リードフレーム用銅合金
JP2000239836A (ja) 1999-02-23 2000-09-05 Japan Energy Corp 高純度銅または銅合金スパッタリングターゲットおよびその製造方法
US6113761A (en) * 1999-06-02 2000-09-05 Johnson Matthey Electronics, Inc. Copper sputtering target assembly and method of making same
US6391163B1 (en) * 1999-09-27 2002-05-21 Applied Materials, Inc. Method of enhancing hardness of sputter deposited copper films
KR20020070443A (ko) * 1999-11-24 2002-09-09 허니웰 인터내셔널 인코포레이티드 전도성 상호연결장치
US20040072009A1 (en) * 1999-12-16 2004-04-15 Segal Vladimir M. Copper sputtering targets and methods of forming copper sputtering targets
JP4005295B2 (ja) 2000-03-31 2007-11-07 富士通株式会社 半導体装置の製造方法
JP2002004048A (ja) 2000-06-20 2002-01-09 Ebara Corp 成膜方法及び装置
JP2002075995A (ja) * 2000-08-24 2002-03-15 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JP2002294438A (ja) 2001-04-02 2002-10-09 Mitsubishi Materials Corp 銅合金スパッタリングターゲット
JP2002294437A (ja) 2001-04-02 2002-10-09 Mitsubishi Materials Corp 銅合金スパッタリングターゲット
KR20040043161A (ko) * 2001-07-19 2004-05-22 허니웰 인터내셔널 인코포레이티드 스퍼터링 타겟, 스퍼터 리액터, 주조잉곳을 제조하는 방법및 금속제품을 제조하는 방법
EP2465969B1 (de) 2002-01-30 2016-05-11 JX Nippon Mining & Metals Corp. Sputtertarget aus kupferlegierung
JP4794802B2 (ja) * 2002-11-21 2011-10-19 Ｊｘ日鉱日石金属株式会社 銅合金スパッタリングターゲット及び半導体素子配線
EP1715077A4 (de) * 2003-12-25 2010-09-29 Nippon Mining Co Anordnung aus kupfer- oder kupferlegierungstarget und kupferlegierungsträgerplatte
CN101001973B (zh) * 2004-08-10 2010-07-14 日矿金属株式会社 柔性铜衬底用阻挡膜和用于形成阻挡膜的溅射靶
CN101473059B (zh) * 2006-10-03 2013-03-20 Jx日矿日石金属株式会社 Cu-Mn合金溅射靶及半导体布线

Also Published As

Publication number Publication date
TW200422415A (en) 2004-11-01
EP2264215A3 (de) 2011-03-16
WO2004083482A1 (ja) 2004-09-30
CN1771349A (zh) 2006-05-10
JP4223511B2 (ja) 2009-02-12
CN100439558C (zh) 2008-12-03
EP1602747A1 (de) 2005-12-07
US9765425B2 (en) 2017-09-19
EP1602747A4 (de) 2008-08-27
TWI248468B (en) 2006-02-01
US20060088436A1 (en) 2006-04-27
KR20050108384A (ko) 2005-11-16
KR100700885B1 (ko) 2007-03-29
EP2264215A2 (de) 2010-12-22
EP1602747B1 (de) 2011-03-30
US20100219070A1 (en) 2010-09-02
JPWO2004083482A1 (ja) 2006-06-22
US7740721B2 (en) 2010-06-22

Similar Documents

Publication Publication Date Title
DE602004032015D1 (de) Verfahren zur herstellung eines kupferlegierungssputtertargets
DE60208360D1 (de) Verfahren zur herstellung eines sputtertargets aus manganlegierung
DE60034513D1 (de) Verfahren zur Herstellung eines Sputtertargets
DE50203144D1 (de) Verfahren zur herstellung eines hartmetallansatzes
DE502005001733D1 (de) Verfahren zur herstellung einer molybdän-legierung
DE602004032323D1 (de) Verfahren zur Herstellung des Tantalsputtertargets
DE50303605D1 (de) Verfahren zur herstellung eines pressgehärteten bauteils
DE602004016462D1 (de) Verfahren zur herstellung eines objekts mittels solid freeform fabrication
DE50302301D1 (de) Verfahren zur herstellung eines formteiles
DE60231787D1 (de) Verfahren zur herstellung eines aktuators
ATE414058T1 (de) Verfahren zur herstellung eines sulfinyl- acetamids
DE502006005741D1 (de) Verfahren zur herstellung eines festen gehäuses
ATE554489T1 (de) Verfahren zur herstellung eines transformators
DE602004007783D1 (de) Verfahren zur herstellung eines schichtkörpers
DE602004021808D1 (de) Verfahren zur herstellung von formkörpern aus magnesiumbasislegierung
DE60327168D1 (de) Verfahren zur herstellung eines eingebetteten widerstands
DE60317715D1 (de) Verfahren zur herstellung eines sektionaltorpaneels
DE602004027298D1 (de) Verfahren zur herstellung eines verdichterrotors
DE602004003114D1 (de) Verfahren zur Herstellung eines Artikels aus einem faserverstärktem Verbundmetal
DE50304619D1 (de) Verfahren zur herstellung eines bauteils
ATE466016T1 (de) Verfahren for zur herstellung eines 14- hydroxynormorphinon-derivats
DE50115053D1 (de) Verfahren zur Herstellung eines Metallpulver-Verbundwerkstoffs
ATE445328T1 (de) Verfahren zur herstellung eines gefrorenen nahrungsmittels
DE602004011531D1 (de) Verfahren zur herstellung von dünnen blechen aus hochfesten titanlegierungen
ATE404613T1 (de) Verfahren zur herstellung eines pulvers mit hohem gerbstoffgehalt