DE602004032323D1 - Verfahren zur Herstellung des Tantalsputtertargets - Google Patents

Verfahren zur Herstellung des Tantalsputtertargets

Info

Publication number
DE602004032323D1
DE602004032323D1 DE602004032323T DE602004032323T DE602004032323D1 DE 602004032323 D1 DE602004032323 D1 DE 602004032323D1 DE 602004032323 T DE602004032323 T DE 602004032323T DE 602004032323 T DE602004032323 T DE 602004032323T DE 602004032323 D1 DE602004032323 D1 DE 602004032323D1
Authority
DE
Germany
Prior art keywords
making
sputtering target
tantalum sputtering
tantalum
target
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE602004032323T
Other languages
English (en)
Inventor
Kunihiro Oda
Atsushi Fukushima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Mining Holdings Inc
Eneos Corp
Original Assignee
Nippon Mining and Metals Co Ltd
Nippon Mining Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Mining and Metals Co Ltd, Nippon Mining Co Ltd filed Critical Nippon Mining and Metals Co Ltd
Publication of DE602004032323D1 publication Critical patent/DE602004032323D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
    • B21J—FORGING; HAMMERING; PRESSING METAL; RIVETING; FORGE FURNACES
    • B21J1/00—Preparing metal stock or similar ancillary operations prior, during or post forging, e.g. heating or cooling
    • B21J1/02—Preliminary treatment of metal stock without particular shaping, e.g. salvaging segregated zones, forging or pressing in the rough
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
    • B21J—FORGING; HAMMERING; PRESSING METAL; RIVETING; FORGE FURNACES
    • B21J5/00—Methods for forging, hammering, or pressing; Special equipment or accessories therefor
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/16—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of other metals or alloys based thereon
    • C22F1/18—High-melting or refractory metals or alloys based thereon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Thermal Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Forging (AREA)
DE602004032323T 2003-04-01 2004-02-19 Verfahren zur Herstellung des Tantalsputtertargets Expired - Lifetime DE602004032323D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003097659 2003-04-01
PCT/JP2004/001915 WO2004090193A1 (ja) 2003-04-01 2004-02-19 タンタルスパッタリングターゲット及びその製造方法

Publications (1)

Publication Number Publication Date
DE602004032323D1 true DE602004032323D1 (de) 2011-06-01

Family

ID=33156648

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004032323T Expired - Lifetime DE602004032323D1 (de) 2003-04-01 2004-02-19 Verfahren zur Herstellung des Tantalsputtertargets

Country Status (8)

Country Link
US (1) US8172960B2 (de)
EP (2) EP2253731B1 (de)
JP (2) JP4256388B2 (de)
KR (1) KR100698745B1 (de)
CN (2) CN1771350A (de)
DE (1) DE602004032323D1 (de)
TW (1) TWI281507B (de)
WO (1) WO2004090193A1 (de)

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JP4109901B2 (ja) 2001-05-29 2008-07-02 キヤノン株式会社 画像表示装置
US20040245099A1 (en) * 2001-11-26 2004-12-09 Atsushi Hukushima Sputtering target and production method therefor
JP4883546B2 (ja) * 2002-09-20 2012-02-22 Ｊｘ日鉱日石金属株式会社 タンタルスパッタリングターゲットの製造方法
JP4263900B2 (ja) * 2002-11-13 2009-05-13 日鉱金属株式会社 Ｔａスパッタリングターゲット及びその製造方法
US7892367B2 (en) * 2003-11-06 2011-02-22 Jx Nippon Mining & Metals Corporation Tantalum sputtering target
EP1876258A4 (de) * 2005-04-28 2008-08-13 Nippon Mining Co Sputtertarget
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JP4913261B2 (ja) 2009-08-11 2012-04-11 Ｊｘ日鉱日石金属株式会社 タンタルスパッタリングターゲット
KR20120082943A (ko) 2009-11-17 2012-07-24 도시바 마테리알 가부시키가이샤 탄탈 스퍼터링 타겟 및 탄탈 스퍼터링 타겟의 제조 방법 및 반도체 소자의 제조 방법
US9085819B2 (en) 2010-08-09 2015-07-21 Jx Nippon Mining & Metals Corporation Tantalum sputtering target
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US20140242401A1 (en) 2011-11-30 2014-08-28 Jx Nippon Mining & Metals Corporation Tantalum Sputtering Target and Method for Manufacturing Same
CN102517550B (zh) * 2011-12-20 2014-07-09 宁波江丰电子材料有限公司 高纯钽靶材的制备方法和高纯钽靶材
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CN102658346A (zh) * 2012-04-06 2012-09-12 宁夏东方钽业股份有限公司 一种大规格钽靶材的锻造方法
KR101927574B1 (ko) 2012-12-19 2018-12-10 제이엑스금속주식회사 탄탈 스퍼터링 타깃 및 그 제조 방법
SG11201501175TA (en) 2012-12-19 2015-05-28 Jx Nippon Mining & Metals Corp Tantalum sputtering target and method for producing same
KR20170092706A (ko) 2013-03-04 2017-08-11 제이엑스금속주식회사 탄탈 스퍼터링 타깃 및 그 제조 방법
CN103243285B (zh) * 2013-05-27 2015-08-26 宁夏东方钽业股份有限公司 一种钽钨材料及其制备方法
KR20160052664A (ko) 2013-10-01 2016-05-12 제이엑스 킨조쿠 가부시키가이샤 탄탈 스퍼터링 타깃
KR102112937B1 (ko) 2014-03-27 2020-05-19 제이엑스금속주식회사 탄탈 스퍼터링 타깃 및 그 제조 방법
CN104313600B (zh) * 2014-09-28 2016-08-24 燕山大学 受损钛合金锻件连续点式锻压激光成形修复方法
CN105722355B (zh) * 2014-12-05 2020-01-21 宏达国际电子股份有限公司 电子装置壳体及其加工方法
CN104741872B (zh) * 2015-01-16 2017-06-16 宁夏东方钽业股份有限公司 一种钽靶材的制备方法
SG11201704463VA (en) 2015-05-22 2017-07-28 Jx Nippon Mining & Metals Corp Tantalum sputtering target, and production method therefor
KR102074047B1 (ko) 2015-05-22 2020-02-05 제이엑스금속주식회사 탄탈 스퍼터링 타깃 및 그 제조 방법
US11177119B2 (en) 2017-03-30 2021-11-16 Jx Nippon Mining & Metals Corporation Tantalum sputtering target
CN109338316B (zh) * 2018-09-12 2020-04-28 中南大学 一种组织及织构可控的超高纯钽及其制备方法和应用
KR102078068B1 (ko) * 2018-10-26 2020-02-17 한국생산기술연구원 탄탈륨 잉곳 및 와이어 제조 방법
CN113025972B (zh) * 2021-03-01 2023-09-08 宁波江丰电子材料股份有限公司 一种铝靶材的制造方法
CN113755801B (zh) * 2021-09-17 2023-03-28 福州大学 一种具有均匀取向的高纯铝靶材的制备方法
CN114164406B (zh) * 2021-11-30 2023-10-20 西北核技术研究所 用于脉冲功率装置的颗粒压结式二极管阳极靶及制备方法
CN114892136A (zh) * 2022-05-25 2022-08-12 同创(丽水)特种材料有限公司 一种钽靶材及其制备方法与应用
CN115044876A (zh) * 2022-06-02 2022-09-13 有研亿金新材料有限公司 一种小尺寸高性能钽靶坯的制备方法
CN115572844B (zh) * 2022-10-27 2024-01-19 先导薄膜材料(安徽)有限公司 从钽残靶中回收钽的方法

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Also Published As

Publication number Publication date
JP4754617B2 (ja) 2011-08-24
EP1609881B1 (de) 2011-04-20
US20070102288A1 (en) 2007-05-10
KR20060012577A (ko) 2006-02-08
CN103966561A (zh) 2014-08-06
EP2253731B1 (de) 2019-07-31
EP1609881A4 (de) 2008-08-13
CN1771350A (zh) 2006-05-10
JP2009114540A (ja) 2009-05-28
TW200422414A (en) 2004-11-01
JP4256388B2 (ja) 2009-04-22
JPWO2004090193A1 (ja) 2006-07-06
US8172960B2 (en) 2012-05-08
EP2253731A1 (de) 2010-11-24
WO2004090193A1 (ja) 2004-10-21
EP1609881A1 (de) 2005-12-28
KR100698745B1 (ko) 2007-03-23
TWI281507B (en) 2007-05-21

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