DE602004015764D1 - Eten optischen sensors - Google Patents

Eten optischen sensors

Info

Publication number
DE602004015764D1
DE602004015764D1 DE602004015764T DE602004015764T DE602004015764D1 DE 602004015764 D1 DE602004015764 D1 DE 602004015764D1 DE 602004015764 T DE602004015764 T DE 602004015764T DE 602004015764 T DE602004015764 T DE 602004015764T DE 602004015764 D1 DE602004015764 D1 DE 602004015764D1
Authority
DE
Germany
Prior art keywords
eten
optical sensor
optical
sensor
eten optical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE602004015764T
Other languages
English (en)
Inventor
Hiroya Kobayashi
Hiroshi Akahori
Masaharu Muramatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hamamatsu Photonics KK
Original Assignee
Hamamatsu Photonics KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu Photonics KK filed Critical Hamamatsu Photonics KK
Publication of DE602004015764D1 publication Critical patent/DE602004015764D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14618—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1464—Back illuminated imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14806—Structural or functional details thereof
    • H01L27/14812—Special geometry or disposition of pixel-elements, address lines or gate-electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Dicing (AREA)
DE602004015764T 2003-04-16 2004-04-14 Eten optischen sensors Expired - Lifetime DE602004015764D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003112047A JP4373695B2 (ja) 2003-04-16 2003-04-16 裏面照射型光検出装置の製造方法
PCT/JP2004/005333 WO2004093195A1 (ja) 2003-04-16 2004-04-14 裏面照射型光検出装置の製造方法

Publications (1)

Publication Number Publication Date
DE602004015764D1 true DE602004015764D1 (de) 2008-09-25

Family

ID=33296019

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004015764T Expired - Lifetime DE602004015764D1 (de) 2003-04-16 2004-04-14 Eten optischen sensors

Country Status (7)

Country Link
US (1) US7556975B2 (de)
EP (1) EP1619722B1 (de)
JP (1) JP4373695B2 (de)
KR (1) KR101052670B1 (de)
CN (1) CN100459137C (de)
DE (1) DE602004015764D1 (de)
WO (1) WO2004093195A1 (de)

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US7973380B2 (en) 2005-11-23 2011-07-05 Taiwan Semiconductor Manufacturing Company, Ltd. Method for providing metal extension in backside illuminated sensor for wafer level testing
US8513789B2 (en) 2006-10-10 2013-08-20 Tessera, Inc. Edge connect wafer level stacking with leads extending along edges
US7829438B2 (en) 2006-10-10 2010-11-09 Tessera, Inc. Edge connect wafer level stacking
US7901989B2 (en) 2006-10-10 2011-03-08 Tessera, Inc. Reconstituted wafer level stacking
JP4463793B2 (ja) * 2006-10-10 2010-05-19 浜松ホトニクス株式会社 光検出装置
JP4421589B2 (ja) * 2006-10-10 2010-02-24 浜松ホトニクス株式会社 光検出装置
JP4490406B2 (ja) * 2006-10-11 2010-06-23 浜松ホトニクス株式会社 固体撮像装置
JP4908150B2 (ja) * 2006-10-18 2012-04-04 浜松ホトニクス株式会社 撮像装置の保持構造及び撮像装置
US7791199B2 (en) 2006-11-22 2010-09-07 Tessera, Inc. Packaged semiconductor chips
US8569876B2 (en) 2006-11-22 2013-10-29 Tessera, Inc. Packaged semiconductor chips with array
US7952195B2 (en) 2006-12-28 2011-05-31 Tessera, Inc. Stacked packages with bridging traces
CN101675516B (zh) * 2007-03-05 2012-06-20 数字光学欧洲有限公司 具有通过过孔连接到前侧触头的后侧触头的芯片
US8461672B2 (en) 2007-07-27 2013-06-11 Tessera, Inc. Reconstituted wafer stack packaging with after-applied pad extensions
KR101588723B1 (ko) 2007-07-31 2016-01-26 인벤사스 코포레이션 실리콘 쓰루 비아를 사용하는 반도체 패키지 공정
US8551815B2 (en) 2007-08-03 2013-10-08 Tessera, Inc. Stack packages using reconstituted wafers
US8043895B2 (en) 2007-08-09 2011-10-25 Tessera, Inc. Method of fabricating stacked assembly including plurality of stacked microelectronic elements
CN102067310B (zh) 2008-06-16 2013-08-21 泰塞拉公司 带有边缘触头的晶片级芯片规模封装的堆叠及其制造方法
JP5185206B2 (ja) * 2009-02-24 2013-04-17 浜松ホトニクス株式会社 半導体光検出素子
JP5185205B2 (ja) 2009-02-24 2013-04-17 浜松ホトニクス株式会社 半導体光検出素子
JP5185208B2 (ja) 2009-02-24 2013-04-17 浜松ホトニクス株式会社 フォトダイオード及びフォトダイオードアレイ
JP5185207B2 (ja) 2009-02-24 2013-04-17 浜松ホトニクス株式会社 フォトダイオードアレイ
EP2406821A2 (de) 2009-03-13 2012-01-18 Tessera, Inc. Gestapelte mikroelektronische baugruppen mit sich durch bondkontaktstellen erstreckenden durchgangslöchern
US8796135B2 (en) 2010-07-23 2014-08-05 Tessera, Inc. Microelectronic elements with rear contacts connected with via first or via middle structures
US9640437B2 (en) 2010-07-23 2017-05-02 Tessera, Inc. Methods of forming semiconductor elements using micro-abrasive particle stream
US8791575B2 (en) 2010-07-23 2014-07-29 Tessera, Inc. Microelectronic elements having metallic pads overlying vias
US8847380B2 (en) 2010-09-17 2014-09-30 Tessera, Inc. Staged via formation from both sides of chip
US8610259B2 (en) 2010-09-17 2013-12-17 Tessera, Inc. Multi-function and shielded 3D interconnects
KR101059490B1 (ko) 2010-11-15 2011-08-25 테세라 리써치 엘엘씨 임베드된 트레이스에 의해 구성된 전도성 패드
US8736066B2 (en) 2010-12-02 2014-05-27 Tessera, Inc. Stacked microelectronic assemby with TSVS formed in stages and carrier above chip
US8587126B2 (en) 2010-12-02 2013-11-19 Tessera, Inc. Stacked microelectronic assembly with TSVs formed in stages with plural active chips
US8637968B2 (en) 2010-12-02 2014-01-28 Tessera, Inc. Stacked microelectronic assembly having interposer connecting active chips
US8610264B2 (en) 2010-12-08 2013-12-17 Tessera, Inc. Compliant interconnects in wafers
JP6803137B2 (ja) * 2015-09-30 2020-12-23 浜松ホトニクス株式会社 裏面入射型固体撮像素子
JP2020088066A (ja) * 2018-11-20 2020-06-04 キヤノン株式会社 電子部品および機器

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0748532B2 (ja) * 1987-06-29 1995-05-24 日本電気株式会社 光センサパッケ−ジ
JPS647561U (de) 1987-07-03 1989-01-17
US5134274A (en) * 1991-03-18 1992-07-28 Hughes Aircraft Company Two-sided solid-state imaging device
JP3441101B2 (ja) 1993-02-12 2003-08-25 浜松ホトニクス株式会社 電子管
JPH06268243A (ja) * 1993-03-12 1994-09-22 Hamamatsu Photonics Kk 半導体エネルギー検出器の製造方法
JP3315465B2 (ja) * 1993-05-07 2002-08-19 浜松ホトニクス株式会社 半導体エネルギー線検出器及びその製造方法
JP3315466B2 (ja) * 1993-05-07 2002-08-19 浜松ホトニクス株式会社 半導体エネルギー線検出器及びその製造方法
JP3317740B2 (ja) * 1993-05-07 2002-08-26 浜松ホトニクス株式会社 半導体エネルギー線検出器及びその製造方法
JP3310051B2 (ja) * 1993-05-21 2002-07-29 浜松ホトニクス株式会社 裏面照射型半導体素子およびその製造方法
JP3361378B2 (ja) * 1994-03-02 2003-01-07 浜松ホトニクス株式会社 半導体デバイスの製造方法
JPH08241977A (ja) * 1995-03-03 1996-09-17 Hamamatsu Photonics Kk 半導体装置の製造方法
JP3486267B2 (ja) * 1995-09-14 2004-01-13 浜松ホトニクス株式会社 裏面照射型半導体装置とその製造方法
LU88704A1 (fr) * 1996-01-26 1997-07-26 Euratom Dispositif de détection de rayonnement thermique et appareil de détection de présence à base d'un tel dispositif
JP3620936B2 (ja) * 1996-10-11 2005-02-16 浜松ホトニクス株式会社 裏面照射型受光デバイスおよびその製造方法
JP3462026B2 (ja) * 1997-01-10 2003-11-05 岩手東芝エレクトロニクス株式会社 半導体装置の製造方法
JP3924352B2 (ja) * 1997-06-05 2007-06-06 浜松ホトニクス株式会社 裏面照射型受光デバイス
JP3809012B2 (ja) * 1998-05-14 2006-08-16 浜松ホトニクス株式会社 固体撮像装置
DE69941131D1 (de) * 1999-01-21 2009-08-27 Hamamatsu Photonics Kk Elektronenstrahlröhre
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JP4588837B2 (ja) * 2000-04-11 2010-12-01 浜松ホトニクス株式会社 半導体受光装置
US6661084B1 (en) * 2000-05-16 2003-12-09 Sandia Corporation Single level microelectronic device package with an integral window

Also Published As

Publication number Publication date
JP4373695B2 (ja) 2009-11-25
KR101052670B1 (ko) 2011-07-28
EP1619722B1 (de) 2008-08-13
CN100459137C (zh) 2009-02-04
KR20050114723A (ko) 2005-12-06
EP1619722A4 (de) 2007-05-30
US20070275488A1 (en) 2007-11-29
WO2004093195A1 (ja) 2004-10-28
EP1619722A1 (de) 2006-01-25
JP2004319791A (ja) 2004-11-11
CN1774810A (zh) 2006-05-17
US7556975B2 (en) 2009-07-07

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Legal Events

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