JP4463793B2 - 光検出装置 - Google Patents
光検出装置 Download PDFInfo
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- JP4463793B2 JP4463793B2 JP2006276908A JP2006276908A JP4463793B2 JP 4463793 B2 JP4463793 B2 JP 4463793B2 JP 2006276908 A JP2006276908 A JP 2006276908A JP 2006276908 A JP2006276908 A JP 2006276908A JP 4463793 B2 JP4463793 B2 JP 4463793B2
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- light detection
- bonding pad
- wiring board
- bonding
- photodetecting
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- 238000001514 detection method Methods 0.000 claims description 89
- 239000000758 substrate Substances 0.000 claims description 17
- 238000009434 installation Methods 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 description 6
- ZMHWQAHZKUPENF-UHFFFAOYSA-N 1,2-dichloro-3-(4-chlorophenyl)benzene Chemical compound C1=CC(Cl)=CC=C1C1=CC=CC(Cl)=C1Cl ZMHWQAHZKUPENF-UHFFFAOYSA-N 0.000 description 5
- 239000011159 matrix material Substances 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/024—Arrangements for cooling, heating, ventilating or temperature compensation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/041—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L31/00
- H01L25/042—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L31/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/50—Constructional details
- H04N23/54—Mounting of pick-up tubes, electronic image sensors, deviation or focusing coils
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05552—Shape in top view
- H01L2224/05553—Shape in top view being rectangular
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/4824—Connecting between the body and an opposite side of the item with respect to the body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Signal Processing (AREA)
- Multimedia (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Description
Claims (5)
- 被設置体に複数並べて配置される光検出装置であって、
一方の面側から入射した光を他方の面側の光検出部で検出する光検出素子と、
前記光検出素子の前記他方の面の所定の領域が露出するように、前記光検出素子と略同面積で前記光検出素子の他方の側に設けられた配線基板とを備え、
前記所定の領域には、前記光検出部と電気的に接続された第1のボンディングパッドが形成され、
前記配線基板において、前記所定の領域よりも内側の領域には、前記第1のボンディングパッドとボンディングワイヤによって電気的に接続された第2のボンディングパッドが形成されていることを特徴とする光検出装置。 - 前記配線基板は、前記第1のボンディングパッドを露出させるスリット部を有していることを特徴とする請求項1記載の光検出装置。
- 前記配線基板において、前記第1のボンディングパッドよりも内側の領域には、前記所定の領域に沿って、前記配線基板の他方の面よりも一方の側に位置する設置面が形成され、
前記第2のボンディングパッドは、前記設置面に設けられていることを特徴とする請求項2記載の光検出装置。 - 前記配線基板は、前記スリット部を他方の面側から塞ぐ蓋部を有していることを特徴とする請求項2又は3記載の光検出装置。
- 前記スリット部及び前記蓋部の少なくとも一方には、前記スリット部の内部を外部と連通させる通気孔を形成する溝部が設けられていることを特徴とする請求項4記載の光検出装置。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006276908A JP4463793B2 (ja) | 2006-10-10 | 2006-10-10 | 光検出装置 |
US12/444,967 US8188417B2 (en) | 2006-10-10 | 2007-10-09 | Light detecting device |
KR1020097001455A KR101386794B1 (ko) | 2006-10-10 | 2007-10-09 | 광검출장치 |
CN2007800358503A CN101542732B (zh) | 2006-10-10 | 2007-10-09 | 光检测装置 |
EP07829421A EP2077583B1 (en) | 2006-10-10 | 2007-10-09 | Light detecting device |
PCT/JP2007/069683 WO2008044678A1 (fr) | 2006-10-10 | 2007-10-09 | Photodétecteur |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006276908A JP4463793B2 (ja) | 2006-10-10 | 2006-10-10 | 光検出装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008098309A JP2008098309A (ja) | 2008-04-24 |
JP4463793B2 true JP4463793B2 (ja) | 2010-05-19 |
Family
ID=39282871
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006276908A Active JP4463793B2 (ja) | 2006-10-10 | 2006-10-10 | 光検出装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8188417B2 (ja) |
EP (1) | EP2077583B1 (ja) |
JP (1) | JP4463793B2 (ja) |
KR (1) | KR101386794B1 (ja) |
CN (1) | CN101542732B (ja) |
WO (1) | WO2008044678A1 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4421589B2 (ja) * | 2006-10-10 | 2010-02-24 | 浜松ホトニクス株式会社 | 光検出装置 |
CL2009000647A1 (es) | 2008-04-04 | 2010-06-04 | Chugai Pharmaceutical Co Ltd | Composicion farmaceutica para tratar o prevenir cancer hepatico que comprende una combinacion de un agente quimioterapeutico y un anticuerpo anti-glipicano 3; agente para atenuar un efecto secundario que comprende dicho anticuerpo; metodo para tratar o prevenir un cancer hepatico de un sujeto. |
US9357972B2 (en) | 2012-07-17 | 2016-06-07 | Cyber Medical Imaging, Inc. | Intraoral radiographic sensors with cables having increased user comfort and methods of using the same |
MA40764A (fr) | 2014-09-26 | 2017-08-01 | Chugai Pharmaceutical Co Ltd | Agent thérapeutique induisant une cytotoxicité |
US9571765B2 (en) | 2015-06-25 | 2017-02-14 | General Electric Company | Universal four-side buttable digital CMOS imager |
US10686003B2 (en) | 2015-12-31 | 2020-06-16 | General Electric Company | Radiation detector assembly |
US10283557B2 (en) | 2015-12-31 | 2019-05-07 | General Electric Company | Radiation detector assembly |
CN109346534B (zh) * | 2018-11-23 | 2024-05-07 | 中国电子科技集团公司第四十四研究所 | 一种陶瓷管壳结构及其封装结构 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1353907A (en) * | 1970-08-21 | 1974-05-22 | Martonair Ltd | Rotary air motor |
US4182128A (en) * | 1977-12-01 | 1980-01-08 | Oros Company | Underground pumped liquid energy storage system and method |
US4246978A (en) * | 1979-02-12 | 1981-01-27 | Dynecology | Propulsion system |
JPH06196680A (ja) | 1992-12-22 | 1994-07-15 | Hamamatsu Photonics Kk | 半導体エネルギー検出器とその製造方法 |
JP2001358997A (ja) | 2000-06-12 | 2001-12-26 | Mitsubishi Electric Corp | 半導体装置 |
DE10034865B4 (de) * | 2000-07-18 | 2006-06-01 | Infineon Technologies Ag | Optoelektronisches oberflächenmontierbares Modul |
JP4606610B2 (ja) * | 2001-01-26 | 2011-01-05 | 浜松ホトニクス株式会社 | 裏面照射型半導体装置及び充填材充填方法 |
JP2004134578A (ja) * | 2002-10-10 | 2004-04-30 | Hamamatsu Photonics Kk | 光検出装置及びその製造方法 |
JP4373695B2 (ja) * | 2003-04-16 | 2009-11-25 | 浜松ホトニクス株式会社 | 裏面照射型光検出装置の製造方法 |
US7470893B2 (en) * | 2003-05-23 | 2008-12-30 | Hamamatsu Photonics K.K. | Photo-detection device |
US6934065B2 (en) * | 2003-09-18 | 2005-08-23 | Micron Technology, Inc. | Microelectronic devices and methods for packaging microelectronic devices |
JP4315833B2 (ja) * | 2004-02-18 | 2009-08-19 | 三洋電機株式会社 | 回路装置 |
KR101294419B1 (ko) * | 2006-03-10 | 2013-08-08 | 엘지이노텍 주식회사 | 카메라 모듈 및 그 제조 방법 |
-
2006
- 2006-10-10 JP JP2006276908A patent/JP4463793B2/ja active Active
-
2007
- 2007-10-09 KR KR1020097001455A patent/KR101386794B1/ko active IP Right Grant
- 2007-10-09 EP EP07829421A patent/EP2077583B1/en active Active
- 2007-10-09 CN CN2007800358503A patent/CN101542732B/zh active Active
- 2007-10-09 US US12/444,967 patent/US8188417B2/en active Active
- 2007-10-09 WO PCT/JP2007/069683 patent/WO2008044678A1/ja active Application Filing
Also Published As
Publication number | Publication date |
---|---|
JP2008098309A (ja) | 2008-04-24 |
CN101542732A (zh) | 2009-09-23 |
US20100012820A1 (en) | 2010-01-21 |
CN101542732B (zh) | 2012-04-18 |
WO2008044678A1 (fr) | 2008-04-17 |
KR20090069265A (ko) | 2009-06-30 |
EP2077583A1 (en) | 2009-07-08 |
KR101386794B1 (ko) | 2014-04-21 |
EP2077583A4 (en) | 2012-05-09 |
US8188417B2 (en) | 2012-05-29 |
EP2077583B1 (en) | 2013-01-16 |
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