DE60138440D1 - Verfahren zur Herstellung eines reduktionsbeständigen Thermistors und Temperatursensor - Google Patents

Verfahren zur Herstellung eines reduktionsbeständigen Thermistors und Temperatursensor

Info

Publication number
DE60138440D1
DE60138440D1 DE60138440T DE60138440T DE60138440D1 DE 60138440 D1 DE60138440 D1 DE 60138440D1 DE 60138440 T DE60138440 T DE 60138440T DE 60138440 T DE60138440 T DE 60138440T DE 60138440 D1 DE60138440 D1 DE 60138440D1
Authority
DE
Germany
Prior art keywords
reduction
producing
temperature sensor
resistant thermistor
thermistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60138440T
Other languages
English (en)
Inventor
Itsuhei Ogata
Daisuke Makino
Kaoru Kuzuoka
Atsushi Kurano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
Denso Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denso Corp filed Critical Denso Corp
Application granted granted Critical
Publication of DE60138440D1 publication Critical patent/DE60138440D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
    • H01C7/042—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient mainly consisting of inorganic non-metallic substances
    • H01C7/043—Oxides or oxidic compounds
    • H01C7/045—Perovskites, e.g. titanates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/02—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
    • H01C7/022—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient mainly consisting of non-metallic substances
    • H01C7/023—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient mainly consisting of non-metallic substances containing oxides or oxidic compounds, e.g. ferrites
    • H01C7/025—Perovskites, e.g. titanates

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Ceramic Engineering (AREA)
  • Thermistors And Varistors (AREA)
  • Compositions Of Oxide Ceramics (AREA)
DE60138440T 2000-08-10 2001-08-09 Verfahren zur Herstellung eines reduktionsbeständigen Thermistors und Temperatursensor Expired - Lifetime DE60138440D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000242119 2000-08-10
JP2001204217A JP2002124403A (ja) 2000-08-10 2001-07-05 耐還元性サーミスタ素子とその製造方法および温度センサ

Publications (1)

Publication Number Publication Date
DE60138440D1 true DE60138440D1 (de) 2009-06-04

Family

ID=26597695

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60138440T Expired - Lifetime DE60138440D1 (de) 2000-08-10 2001-08-09 Verfahren zur Herstellung eines reduktionsbeständigen Thermistors und Temperatursensor

Country Status (4)

Country Link
US (1) US6878304B2 (de)
EP (1) EP1179825B1 (de)
JP (1) JP2002124403A (de)
DE (1) DE60138440D1 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7556745B2 (en) 2002-11-18 2009-07-07 Ngk Spark Plug Co., Ltd. Sintered compact for thermistor element, process for producing the same, thermistor element and temperature sensor
DE60305852T2 (de) * 2002-11-29 2007-06-06 NGK Spark Plug Co., Ltd., Nagoya Sinterkörper für Thermistoren, Thermistor und Temperatursensor
JP2005106802A (ja) * 2003-07-10 2005-04-21 Canon Inc 環境センサー、環境測定装置及び環境測定システム
DE602007004871D1 (de) 2007-12-21 2010-04-01 Vishay Resistors Belgium Bvba Stabiler Thermistor
KR100973058B1 (ko) * 2008-04-23 2010-07-29 한국세라믹기술원 써미스터-바리스터 복합칩 소자 및 그 제조방법
KR20100113321A (ko) * 2009-04-13 2010-10-21 한국기계연구원 고밀도 및 나노결정립 스피넬계 부온도계수 서미스터 후막 및 이의 제조방법
JP5678520B2 (ja) * 2010-08-26 2015-03-04 Tdk株式会社 サーミスタ素子
US8840302B2 (en) 2012-02-09 2014-09-23 Hyundai Motor Company Composite material for a temperature sensor, and a method of manufacturing a temperature sensor using the same
CN105967674A (zh) * 2016-05-06 2016-09-28 中国科学院新疆理化技术研究所 一种铬掺杂铝酸镁高温热敏电阻材料及其制备方法
CN110024053B (zh) * 2017-06-20 2021-03-09 株式会社芝浦电子 热敏电阻烧结体及热敏电阻元件
CN107564641A (zh) * 2017-08-21 2018-01-09 西北工业大学 一种ntc热敏电阻用半导体陶瓷组合物
JP6590004B2 (ja) * 2018-01-15 2019-10-16 三菱マテリアル株式会社 サーミスタ素子及びその製造方法
US11107611B2 (en) * 2018-01-17 2021-08-31 Mitsubishi Materials Corporation Thermistor element and method for producing same
TWI742227B (zh) * 2018-01-19 2021-10-11 日商三菱綜合材料股份有限公司 熱敏電阻元件及其製造方法
EP3780022A4 (de) * 2018-10-30 2022-02-23 Shibaura Electronics Co., Ltd. Thermistor-sinterkörper und temperatursensorelement
CN110931191A (zh) * 2019-12-26 2020-03-27 广东爱晟电子科技有限公司 Lu2O3稀土元素改性耐高温高可靠NTC半导体陶瓷热敏芯片材料
CN112811905A (zh) * 2020-05-07 2021-05-18 深圳市特普生科技有限公司 一种高温用负温度系数热敏电阻材料及其制造方法
CN112898974A (zh) * 2021-01-22 2021-06-04 厦门大学附属心血管病医院 高温度敏感的镱铥双掺氧化铈荧光材料及其制备方法
CN113667941B (zh) * 2021-08-17 2023-04-11 西安邮电大学 一种中熵热敏薄膜及其制备方法和应用

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0001511A1 (de) * 1977-10-05 1979-04-18 Ford Motor Company Limited Thermistor und Verfahren zu seiner Herstellung
JPH0799102A (ja) * 1993-05-07 1995-04-11 Ngk Spark Plug Co Ltd サーミスタ用磁器組成物およびサーミスタ素子
JPH06325907A (ja) 1993-05-10 1994-11-25 Ngk Spark Plug Co Ltd サーミスタ用磁器組成物
JP3254594B2 (ja) 1993-05-24 2002-02-12 日本特殊陶業株式会社 サーミスタ用磁器組成物およびサーミスタ素子
JP3141642B2 (ja) * 1993-09-06 2001-03-05 松下電器産業株式会社 正特性サーミスタの製造方法
JP3254595B2 (ja) 1993-11-25 2002-02-12 日本特殊陶業株式会社 サーミスタ用磁器組成物
JPH07235405A (ja) 1993-12-27 1995-09-05 Komatsu Ltd サーミスタ焼結体
JPH08259320A (ja) 1995-03-23 1996-10-08 Koichi Niihara ペロブスカイト化合物焼結体
JP2904066B2 (ja) 1995-08-31 1999-06-14 松下電器産業株式会社 温度センサ及びその製造方法
US6143207A (en) * 1996-09-18 2000-11-07 Kabushiki Kaisha Toyota Chuo Kenkyusho Wide-range thermistor material and method for producing it
JPH10154604A (ja) 1996-11-26 1998-06-09 Matsushita Electric Ind Co Ltd 正特性サーミスタの製造方法
EP0866472B1 (de) 1997-03-19 2010-08-18 Denso Corporation Thermistorelement und Temperatursensor
JPH10321048A (ja) * 1997-05-16 1998-12-04 Furukawa Electric Co Ltd:The テンションメンバ、それを用いた軽量低弛度架空電線
JP2000012308A (ja) * 1998-04-24 2000-01-14 Nippon Soken Inc サ―ミスタ素子の製造方法
US6306315B1 (en) * 1998-02-27 2001-10-23 Denso Corporation Thermistor device thermistor device manufacturing method and temperature sensor
FR2775537B1 (fr) * 1998-02-27 2001-06-22 Denso Corp Dispositif de thermistance, methode de fabrication d'un tel dispositif et capteur de temperature

Also Published As

Publication number Publication date
EP1179825A3 (de) 2004-02-04
EP1179825B1 (de) 2009-04-22
JP2002124403A (ja) 2002-04-26
US20020036563A1 (en) 2002-03-28
US6878304B2 (en) 2005-04-12
EP1179825A2 (de) 2002-02-13

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