DE60138159D1 - Integrierte Schaltung mit Induktanz von hohem Gütefaktor und grosser Kompaktheit - Google Patents

Integrierte Schaltung mit Induktanz von hohem Gütefaktor und grosser Kompaktheit

Info

Publication number
DE60138159D1
DE60138159D1 DE60138159T DE60138159T DE60138159D1 DE 60138159 D1 DE60138159 D1 DE 60138159D1 DE 60138159 T DE60138159 T DE 60138159T DE 60138159 T DE60138159 T DE 60138159T DE 60138159 D1 DE60138159 D1 DE 60138159D1
Authority
DE
Germany
Prior art keywords
inductance
integrated circuit
high quality
quality factor
great compactness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60138159T
Other languages
English (en)
Inventor
Benoit Butaye
Patrice Gamand
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP BV
Original Assignee
NXP BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NXP BV filed Critical NXP BV
Application granted granted Critical
Publication of DE60138159D1 publication Critical patent/DE60138159D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/645—Inductive arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5227—Inductive arrangements or effects of, or between, wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
  • Coils Or Transformers For Communication (AREA)
  • Filters And Equalizers (AREA)
DE60138159T 2000-06-20 2001-06-13 Integrierte Schaltung mit Induktanz von hohem Gütefaktor und grosser Kompaktheit Expired - Lifetime DE60138159D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0007864A FR2810451A1 (fr) 2000-06-20 2000-06-20 Circuit integre incluant un element inductif de facteur de qualite eleve et presentant une grande compacite

Publications (1)

Publication Number Publication Date
DE60138159D1 true DE60138159D1 (de) 2009-05-14

Family

ID=8851449

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60138159T Expired - Lifetime DE60138159D1 (de) 2000-06-20 2001-06-13 Integrierte Schaltung mit Induktanz von hohem Gütefaktor und grosser Kompaktheit

Country Status (8)

Country Link
US (1) US7002233B2 (de)
EP (1) EP1168442B1 (de)
JP (1) JP2002093916A (de)
KR (1) KR100875601B1 (de)
CN (1) CN100372120C (de)
DE (1) DE60138159D1 (de)
FR (1) FR2810451A1 (de)
TW (1) TW513811B (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10221442B4 (de) * 2002-05-15 2005-09-22 Xignal Technologies Ag Induktives Element einer integrierten Schaltung
KR101005264B1 (ko) 2003-07-26 2011-01-04 삼성전자주식회사 대칭형 인덕터 소자
JP4444683B2 (ja) * 2004-02-10 2010-03-31 株式会社日立製作所 コイル状アンテナを有する半導体チップ及びこれを用いた通信システム
JP2008503890A (ja) * 2004-06-23 2008-02-07 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ プレーナインダクタ
JP4541800B2 (ja) * 2004-08-20 2010-09-08 ルネサスエレクトロニクス株式会社 インダクタを備えた半導体装置
FR2878081B1 (fr) * 2004-11-17 2009-03-06 France Telecom Procede de realisation d'antennes integrees sur puce ayant une efficacite de rayonnement ameliore.
TW200802430A (en) * 2006-01-09 2008-01-01 Koninkl Philips Electronics Nv Integrated circuit inductor with small floating metal structures
US7750408B2 (en) * 2007-03-29 2010-07-06 International Business Machines Corporation Integrated circuit structure incorporating an inductor, a conductive sheet and a protection circuit
JP2008263074A (ja) * 2007-04-12 2008-10-30 Renesas Technology Corp 半導体装置
JP5551480B2 (ja) * 2010-03-24 2014-07-16 ルネサスエレクトロニクス株式会社 半導体装置および半導体装置の製造方法
US9759580B2 (en) * 2015-08-27 2017-09-12 Texas Instruments Incorporated Position sensor
US9954487B1 (en) 2016-10-07 2018-04-24 International Business Machines Corporation Tuning LC tank circuits
EP3327806B1 (de) * 2016-11-24 2021-07-21 Murata Integrated Passive Solutions Integriertes elektronisches bauteil für breitbandige vorspannung
US9899967B1 (en) * 2017-02-01 2018-02-20 Infineon Technologies Ag Embedded harmonic termination on high power RF transistor

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6021556A (ja) * 1983-07-15 1985-02-02 Fujitsu Ltd 半導体装置の製造方法
JPS61115302A (ja) * 1984-11-12 1986-06-02 Asahi Chem Ind Co Ltd シ−トコイル
JPH0272660A (ja) * 1988-09-07 1990-03-12 Kawasaki Steel Corp 半導体装置
WO1994017558A1 (en) * 1993-01-29 1994-08-04 The Regents Of The University Of California Monolithic passive component
JPH0774311A (ja) * 1993-09-06 1995-03-17 Toshiba Corp 半導体アナログ集積回路
JPH07335441A (ja) * 1994-06-07 1995-12-22 Sony Corp コイル構造
JPH08181018A (ja) * 1994-12-26 1996-07-12 Murata Mfg Co Ltd コイル装置
JPH08330517A (ja) * 1995-05-31 1996-12-13 Sanyo Electric Co Ltd 集積回路装置および共振回路
SE510443C2 (sv) * 1996-05-31 1999-05-25 Ericsson Telefon Ab L M Induktorer för integrerade kretsar
US5793272A (en) * 1996-08-23 1998-08-11 International Business Machines Corporation Integrated circuit toroidal inductor
EP0836271B1 (de) * 1996-10-10 2003-01-29 Philips Electronics N.V. Integrierter Oszillator und einen solchen Oszillator verwendendes Funktelefon
US5872384A (en) * 1997-01-17 1999-02-16 Lucent Technologies Inc. Component arrangement having magnetic field controlled transistor
WO1998050956A1 (en) * 1997-05-02 1998-11-12 The Board Of Trustees Of The Leland Stanford Junior University Patterned ground shields for integrated circuit inductors
JPH10321802A (ja) * 1997-05-22 1998-12-04 Toshiba Corp インダクタ素子
US6160303A (en) * 1997-08-29 2000-12-12 Texas Instruments Incorporated Monolithic inductor with guard rings
JP3661380B2 (ja) * 1997-12-12 2005-06-15 富士電機デバイステクノロジー株式会社 平面型インダクタ
KR19990055422A (ko) * 1997-12-27 1999-07-15 정선종 실리콘 기판에서의 인덕터 장치 및 그 제조 방법
JP2000022085A (ja) * 1998-06-29 2000-01-21 Toshiba Corp 半導体装置及びその製造方法
US6529720B1 (en) * 1998-12-29 2003-03-04 Koninklijke Philips Electronics N.V. Integrated circuit of inductive elements
US6566731B2 (en) * 1999-02-26 2003-05-20 Micron Technology, Inc. Open pattern inductor
US7038294B2 (en) * 2001-03-29 2006-05-02 Taiwan Semiconductor Manufacturing Company, Ltd. Planar spiral inductor structure with patterned microelectronic structure integral thereto

Also Published As

Publication number Publication date
KR20020000109A (ko) 2002-01-04
US7002233B2 (en) 2006-02-21
EP1168442B1 (de) 2009-04-01
CN100372120C (zh) 2008-02-27
EP1168442A2 (de) 2002-01-02
EP1168442A3 (de) 2002-05-02
TW513811B (en) 2002-12-11
JP2002093916A (ja) 2002-03-29
US20020063585A1 (en) 2002-05-30
KR100875601B1 (ko) 2008-12-23
CN1331493A (zh) 2002-01-16
FR2810451A1 (fr) 2001-12-21

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition