TW200802430A - Integrated circuit inductor with small floating metal structures - Google Patents
Integrated circuit inductor with small floating metal structuresInfo
- Publication number
- TW200802430A TW200802430A TW096100511A TW96100511A TW200802430A TW 200802430 A TW200802430 A TW 200802430A TW 096100511 A TW096100511 A TW 096100511A TW 96100511 A TW96100511 A TW 96100511A TW 200802430 A TW200802430 A TW 200802430A
- Authority
- TW
- Taiwan
- Prior art keywords
- integrated circuit
- inductive element
- circuit inductor
- ground shield
- substrate
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/645—Inductive arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
- H01L23/5225—Shielding layers formed together with wiring layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5227—Inductive arrangements or effects of, or between, wiring layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Coils Or Transformers For Communication (AREA)
Abstract
The present invention relates to an integrated circuit inductor structure comprising a plurality of dummy metal fill patterns as required in modern integrated circuit processes, an inductive element, a substrate and an optional patterned ground shield. Starting from our physics-based wide-band predictive compact model, a higher quality factor will be achieved when the size of the dummy metal fill patterns and the width of the patterned ground shield will be chosen as inversely proportional to the increasing operating frequency of the inductive element. The performance of such a circuit inductor can be further improved by using a high resistivity substrate as well as by locally blocking any well implant located on top of the substrate. Additionally, a higher resonant frequency can be obtained while disposing the dummy metal fill patterns within a predetermined distance of at least three times a distance to the patterned ground shield away from the inductive element.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP06100157 | 2006-01-09 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200802430A true TW200802430A (en) | 2008-01-01 |
Family
ID=37864476
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW096100511A TW200802430A (en) | 2006-01-09 | 2007-01-05 | Integrated circuit inductor with small floating metal structures |
Country Status (2)
Country | Link |
---|---|
TW (1) | TW200802430A (en) |
WO (1) | WO2007080531A1 (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2266121B1 (en) | 2008-04-10 | 2015-06-10 | Nxp B.V. | 8-shaped inductor |
EP2421011A1 (en) * | 2010-08-19 | 2012-02-22 | Nxp B.V. | Symmetrical inductor |
WO2020199036A1 (en) * | 2019-03-29 | 2020-10-08 | 华为技术有限公司 | Inductive wiring architecture, integrated circuit, and communication device |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001052928A (en) * | 1999-08-17 | 2001-02-23 | Tif:Kk | Inductor element |
FR2810451A1 (en) * | 2000-06-20 | 2001-12-21 | Koninkl Philips Electronics Nv | INTEGRATED CIRCUIT INCLUDING A HIGH QUALITY FACTOR INDUCTIVE ELEMENT AND HAVING HIGH COMPACITY |
JP2006511068A (en) * | 2002-12-13 | 2006-03-30 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | Integrated circuit having planar inductive components and planar inductor components |
US20050001708A1 (en) * | 2003-06-23 | 2005-01-06 | Kesling Dawson W. | Dummy metal filling |
JP4150689B2 (en) * | 2004-03-29 | 2008-09-17 | 富士通株式会社 | Multilayer wiring structure formed in a semiconductor integrated circuit device |
JP4795667B2 (en) * | 2004-11-05 | 2011-10-19 | ルネサスエレクトロニクス株式会社 | Semiconductor device and manufacturing method thereof |
-
2007
- 2007-01-05 WO PCT/IB2007/050040 patent/WO2007080531A1/en active Application Filing
- 2007-01-05 TW TW096100511A patent/TW200802430A/en unknown
Also Published As
Publication number | Publication date |
---|---|
WO2007080531A1 (en) | 2007-07-19 |
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