DE60136261D1 - Halbleiterbauelement mit Strombegrenzungstruktur - Google Patents

Halbleiterbauelement mit Strombegrenzungstruktur

Info

Publication number
DE60136261D1
DE60136261D1 DE60136261T DE60136261T DE60136261D1 DE 60136261 D1 DE60136261 D1 DE 60136261D1 DE 60136261 T DE60136261 T DE 60136261T DE 60136261 T DE60136261 T DE 60136261T DE 60136261 D1 DE60136261 D1 DE 60136261D1
Authority
DE
Germany
Prior art keywords
semiconductor device
current limiting
limiting structure
current
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60136261T
Other languages
German (de)
English (en)
Inventor
Paul Marshall Charles
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Avago Technologies International Sales Pte Ltd
Original Assignee
Avago Technologies Fiber IP Singapore Pte Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Avago Technologies Fiber IP Singapore Pte Ltd filed Critical Avago Technologies Fiber IP Singapore Pte Ltd
Application granted granted Critical
Publication of DE60136261D1 publication Critical patent/DE60136261D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H10H20/8162—Current-blocking structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties
    • H01S5/2226—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties semiconductors with a specific doping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/3434—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer comprising at least both As and P as V-compounds

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
DE60136261T 2001-01-18 2001-01-18 Halbleiterbauelement mit Strombegrenzungstruktur Expired - Fee Related DE60136261D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP01300447A EP1225670B1 (en) 2001-01-18 2001-01-18 Semiconductor device with current confinement structure

Publications (1)

Publication Number Publication Date
DE60136261D1 true DE60136261D1 (de) 2008-12-04

Family

ID=8181652

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60136261T Expired - Fee Related DE60136261D1 (de) 2001-01-18 2001-01-18 Halbleiterbauelement mit Strombegrenzungstruktur

Country Status (4)

Country Link
US (1) US6509580B2 (enExample)
EP (1) EP1225670B1 (enExample)
JP (1) JP2002232080A (enExample)
DE (1) DE60136261D1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10108079A1 (de) * 2000-05-30 2002-09-12 Osram Opto Semiconductors Gmbh Optisch gepumpte oberflächenemittierende Halbleiterlaservorrichtung und Verfahren zu deren Herstellung
US6829275B2 (en) * 2001-12-20 2004-12-07 Bookham Technology, Plc Hybrid confinement layers of buried heterostructure semiconductor laser
DE60209184T2 (de) * 2002-06-12 2006-07-20 Agilent Technologies, Inc. (n.d.Ges.d.Staates Delaware), Palo Alto Integriertes Halbleiterlaser-Wellenleiter-Element
DE60215131T2 (de) * 2002-06-12 2007-03-15 Agilent Technologies, Inc. (n.d.Ges.d.Staates Delaware), Palo Alto Integriertes Halbleiterlaser-Wellenleiter-Element
KR100547830B1 (ko) * 2003-08-13 2006-01-31 삼성전자주식회사 집적광학장치 및 그 제조방법
US7009214B2 (en) 2003-10-17 2006-03-07 Atomic Energy Council —Institute of Nuclear Energy Research Light-emitting device with a current blocking structure and method for making the same
JP2005260109A (ja) * 2004-03-15 2005-09-22 Fujitsu Ltd 光半導体素子
DE102010026518B4 (de) * 2010-07-08 2025-02-27 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Leuchtdiodenchip und Verfahren zur Herstellung einer Mehrzahl von Leuchtdiodenchips
JP5803366B2 (ja) * 2011-07-14 2015-11-04 住友電気工業株式会社 埋め込みヘテロ構造半導体レーザの製造方法及び埋め込みヘテロ構造半導体レーザ
US11133649B2 (en) * 2019-06-21 2021-09-28 Palo Alto Research Center Incorporated Index and gain coupled distributed feedback laser

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4425650A (en) * 1980-04-15 1984-01-10 Nippon Electric Co., Ltd. Buried heterostructure laser diode
AU655975B2 (en) * 1991-05-07 1995-01-19 British Telecommunications Public Limited Company Optical clock extraction
JPH05167191A (ja) * 1991-12-18 1993-07-02 Furukawa Electric Co Ltd:The 埋め込み型半導体レーザ素子
JPH0722691A (ja) * 1993-06-30 1995-01-24 Mitsubishi Electric Corp 半導体レーザとその製造方法
EP0639875A1 (en) * 1993-07-12 1995-02-22 BRITISH TELECOMMUNICATIONS public limited company Electrical barrier structure for semiconductor device
JPH0851250A (ja) * 1994-08-09 1996-02-20 Mitsubishi Electric Corp 半導体レーザ
US5832019A (en) * 1994-11-28 1998-11-03 Xerox Corporation Index guided semiconductor laser biode with shallow selective IILD
JP3386261B2 (ja) * 1994-12-05 2003-03-17 三菱電機株式会社 光半導体装置、及びその製造方法
JPH08213691A (ja) * 1995-01-31 1996-08-20 Nec Corp 半導体レーザ
JPH0918079A (ja) * 1995-06-27 1997-01-17 Mitsubishi Electric Corp 半導体装置の製造方法，及び半導体装置
JP3241002B2 (ja) * 1998-09-02 2001-12-25 日本電気株式会社 半導体レーザの製造方法

Also Published As

Publication number Publication date
JP2002232080A (ja) 2002-08-16
US20020093013A1 (en) 2002-07-18
EP1225670B1 (en) 2008-10-22
US6509580B2 (en) 2003-01-21
EP1225670A1 (en) 2002-07-24

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee