JP2002232080A - 電流閉じ込め構造を持つ半導体素子及びその製造方法 - Google Patents

電流閉じ込め構造を持つ半導体素子及びその製造方法

Info

Publication number
JP2002232080A
JP2002232080A JP2002005692A JP2002005692A JP2002232080A JP 2002232080 A JP2002232080 A JP 2002232080A JP 2002005692 A JP2002005692 A JP 2002005692A JP 2002005692 A JP2002005692 A JP 2002005692A JP 2002232080 A JP2002232080 A JP 2002232080A
Authority
JP
Japan
Prior art keywords
current
active layer
barrier structure
region
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2002005692A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002232080A5 (enExample
Inventor
Paul Marshall Charles
ポール・マーシャル・チャールズ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Agilent Technologies Inc
Original Assignee
Agilent Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agilent Technologies Inc filed Critical Agilent Technologies Inc
Publication of JP2002232080A publication Critical patent/JP2002232080A/ja
Publication of JP2002232080A5 publication Critical patent/JP2002232080A5/ja
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H10H20/8162—Current-blocking structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties
    • H01S5/2226—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties semiconductors with a specific doping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/3434—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer comprising at least both As and P as V-compounds

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
JP2002005692A 2001-01-18 2002-01-15 電流閉じ込め構造を持つ半導体素子及びその製造方法 Withdrawn JP2002232080A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP01300447A EP1225670B1 (en) 2001-01-18 2001-01-18 Semiconductor device with current confinement structure
EP01300447.8 2001-01-18

Publications (2)

Publication Number Publication Date
JP2002232080A true JP2002232080A (ja) 2002-08-16
JP2002232080A5 JP2002232080A5 (enExample) 2005-08-04

Family

ID=8181652

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002005692A Withdrawn JP2002232080A (ja) 2001-01-18 2002-01-15 電流閉じ込め構造を持つ半導体素子及びその製造方法

Country Status (4)

Country Link
US (1) US6509580B2 (enExample)
EP (1) EP1225670B1 (enExample)
JP (1) JP2002232080A (enExample)
DE (1) DE60136261D1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005064512A (ja) * 2003-08-13 2005-03-10 Samsung Electronics Co Ltd 集積光学装置及びその製造方法
JP2005260109A (ja) * 2004-03-15 2005-09-22 Fujitsu Ltd 光半導体素子

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10108079A1 (de) * 2000-05-30 2002-09-12 Osram Opto Semiconductors Gmbh Optisch gepumpte oberflächenemittierende Halbleiterlaservorrichtung und Verfahren zu deren Herstellung
US6829275B2 (en) * 2001-12-20 2004-12-07 Bookham Technology, Plc Hybrid confinement layers of buried heterostructure semiconductor laser
EP1372229B1 (en) * 2002-06-12 2006-02-15 Agilent Technologies Inc., A Delaware Corporation Integrated semiconductor laser and waveguide device
EP1372228B1 (en) * 2002-06-12 2006-10-04 Agilent Technologies, Inc. - a Delaware corporation - Integrated semiconductor laser and waveguide device
US7009214B2 (en) 2003-10-17 2006-03-07 Atomic Energy Council —Institute of Nuclear Energy Research Light-emitting device with a current blocking structure and method for making the same
DE102010026518B4 (de) * 2010-07-08 2025-02-27 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Leuchtdiodenchip und Verfahren zur Herstellung einer Mehrzahl von Leuchtdiodenchips
JP5803366B2 (ja) * 2011-07-14 2015-11-04 住友電気工業株式会社 埋め込みヘテロ構造半導体レーザの製造方法及び埋め込みヘテロ構造半導体レーザ
US11133649B2 (en) * 2019-06-21 2021-09-28 Palo Alto Research Center Incorporated Index and gain coupled distributed feedback laser

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4425650A (en) * 1980-04-15 1984-01-10 Nippon Electric Co., Ltd. Buried heterostructure laser diode
ES2084358T3 (es) * 1991-05-07 1996-05-01 British Telecomm Extraccion optica del reloj.
JPH05167191A (ja) * 1991-12-18 1993-07-02 Furukawa Electric Co Ltd:The 埋め込み型半導体レーザ素子
JPH0722691A (ja) * 1993-06-30 1995-01-24 Mitsubishi Electric Corp 半導体レーザとその製造方法
EP0639875A1 (en) * 1993-07-12 1995-02-22 BRITISH TELECOMMUNICATIONS public limited company Electrical barrier structure for semiconductor device
JPH0851250A (ja) * 1994-08-09 1996-02-20 Mitsubishi Electric Corp 半導体レーザ
US5832019A (en) * 1994-11-28 1998-11-03 Xerox Corporation Index guided semiconductor laser biode with shallow selective IILD
JP3386261B2 (ja) * 1994-12-05 2003-03-17 三菱電機株式会社 光半導体装置、及びその製造方法
JPH08213691A (ja) * 1995-01-31 1996-08-20 Nec Corp 半導体レーザ
JPH0918079A (ja) * 1995-06-27 1997-01-17 Mitsubishi Electric Corp 半導体装置の製造方法，及び半導体装置
JP3241002B2 (ja) * 1998-09-02 2001-12-25 日本電気株式会社 半導体レーザの製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005064512A (ja) * 2003-08-13 2005-03-10 Samsung Electronics Co Ltd 集積光学装置及びその製造方法
JP2005260109A (ja) * 2004-03-15 2005-09-22 Fujitsu Ltd 光半導体素子

Also Published As

Publication number Publication date
US6509580B2 (en) 2003-01-21
US20020093013A1 (en) 2002-07-18
DE60136261D1 (de) 2008-12-04
EP1225670A1 (en) 2002-07-24
EP1225670B1 (en) 2008-10-22

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