DE60128076D1 - Herstellungsverfahren für einen LICHTENERGIEWANDLER - Google Patents

Herstellungsverfahren für einen LICHTENERGIEWANDLER

Info

Publication number
DE60128076D1
DE60128076D1 DE60128076T DE60128076T DE60128076D1 DE 60128076 D1 DE60128076 D1 DE 60128076D1 DE 60128076 T DE60128076 T DE 60128076T DE 60128076 T DE60128076 T DE 60128076T DE 60128076 D1 DE60128076 D1 DE 60128076D1
Authority
DE
Germany
Prior art keywords
production method
lighting transformer
transformer
lighting
production
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60128076T
Other languages
English (en)
Other versions
DE60128076T2 (de
Inventor
Akio Machida
Setsuo Usui
Kazumasa Nomoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Application granted granted Critical
Publication of DE60128076D1 publication Critical patent/DE60128076D1/de
Publication of DE60128076T2 publication Critical patent/DE60128076T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0368—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors
    • H01L31/03682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors including only elements of Group IV of the Periodic System
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
DE60128076T 2000-03-13 2001-03-13 Herstellungsverfahren für einen LICHTENERGIEWANDLER Expired - Fee Related DE60128076T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000067981 2000-03-13
JP2000067981 2000-03-13
PCT/JP2001/001981 WO2001069690A1 (en) 2000-03-13 2001-03-13 Optical energy transducer

Publications (2)

Publication Number Publication Date
DE60128076D1 true DE60128076D1 (de) 2007-06-06
DE60128076T2 DE60128076T2 (de) 2007-12-27

Family

ID=18587095

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60128076T Expired - Fee Related DE60128076T2 (de) 2000-03-13 2001-03-13 Herstellungsverfahren für einen LICHTENERGIEWANDLER

Country Status (7)

Country Link
US (2) US7199303B2 (de)
EP (1) EP1265297B1 (de)
JP (1) JP4752168B2 (de)
KR (1) KR100768414B1 (de)
CN (1) CN1225029C (de)
DE (1) DE60128076T2 (de)
WO (1) WO2001069690A1 (de)

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FR2880989B1 (fr) * 2005-01-20 2007-03-09 Commissariat Energie Atomique Dispositif semi-conducteur a heterojonctions et a structure inter-digitee
US20070079867A1 (en) * 2005-10-12 2007-04-12 Kethinni Chittibabu Photovoltaic fibers
WO2008088570A1 (en) * 2006-04-18 2008-07-24 Itn Energy Systems, Inc. Reinforcing structures for thin-film photovoltaic device substrates, and associated methods
US20070256734A1 (en) * 2006-05-08 2007-11-08 United Solar Ovonic Llc Stabilized photovoltaic device and methods for its manufacture
US7947149B2 (en) * 2007-01-25 2011-05-24 United Solar Ovonic Llc Lamination process and roller for use therein
US20080295882A1 (en) * 2007-05-31 2008-12-04 Thinsilicon Corporation Photovoltaic device and method of manufacturing photovoltaic devices
DE102008010712B4 (de) * 2008-02-21 2012-03-08 Solon Se Photovoltaikmodul mit Windsogsicherungen für Flachdächer
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CN102460715B (zh) 2009-04-21 2015-07-22 泰特拉桑有限公司 高效率太阳能电池结构及制造方法
US20110168259A1 (en) * 2009-07-13 2011-07-14 Sanyo Electric Co., Ltd. Thin film solar cell and manufacturing method thereof
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US9012766B2 (en) 2009-11-12 2015-04-21 Silevo, Inc. Aluminum grid as backside conductor on epitaxial silicon thin film solar cells
EP2362425A1 (de) * 2010-02-26 2011-08-31 Excico Group NV Verfahren zur Bildung eines selektiven Kontakts
EP2553735B1 (de) 2010-03-26 2017-11-15 Tetrasun, Inc. Abgeschirmter elektrischer kontakt und dotierung durch eine passivierende dielektrische schicht in einer hocheffizienten kristallinen solarzelle einschliesslich einer struktur und herstellungsverfahren dafür
WO2011135975A1 (ja) * 2010-04-27 2011-11-03 日本電気株式会社 ＳｉＧｅ積層薄膜それを用いた赤外線センサ
US8653360B2 (en) 2010-08-04 2014-02-18 International Business Machines Corporation Compositionally-graded band gap heterojunction solar cell
KR101048165B1 (ko) * 2010-08-20 2011-07-08 현대중공업 주식회사 태양전지 제조 방법
EP2458393A3 (de) * 2010-08-31 2013-09-25 SCHOTT Solar AG Verfahren zur Bestimmung der Kenngrössen einer photovoltaischen Einrichtung
JP2013077685A (ja) 2011-09-30 2013-04-25 Semiconductor Energy Lab Co Ltd 光電変換装置
CN102354540B (zh) * 2011-10-19 2013-08-14 西安电子科技大学 I层钒掺杂的pin型核电池及其制作方法
US9412884B2 (en) 2013-01-11 2016-08-09 Solarcity Corporation Module fabrication of solar cells with low resistivity electrodes
US9219174B2 (en) 2013-01-11 2015-12-22 Solarcity Corporation Module fabrication of solar cells with low resistivity electrodes
US10074755B2 (en) 2013-01-11 2018-09-11 Tesla, Inc. High efficiency solar panel
JP6648008B2 (ja) 2013-06-12 2020-02-14 マサチューセッツ インスティテュート オブ テクノロジー 光変調器、波長分割多重システムおよび光変調器デバイス
US11005000B2 (en) 2013-12-09 2021-05-11 Avago Technologies International Sales Pte. Limited Connector for photonic device
US10309012B2 (en) 2014-07-03 2019-06-04 Tesla, Inc. Wafer carrier for reducing contamination from carbon particles and outgassing
CN104393120B (zh) * 2014-10-20 2017-01-18 上海空间电源研究所 非晶硅锗薄膜太阳电池顶电池p型层的制备方法及用途
US9899546B2 (en) * 2014-12-05 2018-02-20 Tesla, Inc. Photovoltaic cells with electrodes adapted to house conductive paste
US9673341B2 (en) 2015-05-08 2017-06-06 Tetrasun, Inc. Photovoltaic devices with fine-line metallization and methods for manufacture
WO2017058319A2 (en) * 2015-06-30 2017-04-06 Massachusetts Institute Of Technology Waveguide-coupled silicon-germanium photodetectors and fabrication methods for same
US11105974B2 (en) 2015-06-30 2021-08-31 Massachusetts Institute Of Technology Waveguide-coupled silicon-germanium photodetectors and fabrication methods for same
US9761744B2 (en) 2015-10-22 2017-09-12 Tesla, Inc. System and method for manufacturing photovoltaic structures with a metal seed layer
US10115838B2 (en) 2016-04-19 2018-10-30 Tesla, Inc. Photovoltaic structures with interlocking busbars
CN108269732B (zh) * 2017-01-03 2020-08-11 联华电子股份有限公司 形成非晶硅多层结构的方法
CN108987521B (zh) * 2017-05-31 2022-02-08 安华高科技股份有限公司 将光能转换为电能的换能器
US10672919B2 (en) 2017-09-19 2020-06-02 Tesla, Inc. Moisture-resistant solar cells for solar roof tiles
US11190128B2 (en) 2018-02-27 2021-11-30 Tesla, Inc. Parallel-connected solar roof tile modules

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Also Published As

Publication number Publication date
JP4752168B2 (ja) 2011-08-17
US20050092358A1 (en) 2005-05-05
EP1265297A4 (de) 2003-07-02
KR100768414B1 (ko) 2007-10-18
US20030136440A1 (en) 2003-07-24
WO2001069690A1 (en) 2001-09-20
EP1265297B1 (de) 2007-04-25
EP1265297A1 (de) 2002-12-11
CN1225029C (zh) 2005-10-26
US7199303B2 (en) 2007-04-03
DE60128076T2 (de) 2007-12-27
KR20020079952A (ko) 2002-10-19
CN1422443A (zh) 2003-06-04

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee