DE60127050T2 - Lithographischer Projektionsapparat - Google Patents

Lithographischer Projektionsapparat Download PDF

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Publication number
DE60127050T2
DE60127050T2 DE60127050T DE60127050T DE60127050T2 DE 60127050 T2 DE60127050 T2 DE 60127050T2 DE 60127050 T DE60127050 T DE 60127050T DE 60127050 T DE60127050 T DE 60127050T DE 60127050 T2 DE60127050 T2 DE 60127050T2
Authority
DE
Germany
Prior art keywords
mirror
radiation
alcohol
layer
projection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60127050T
Other languages
German (de)
English (en)
Other versions
DE60127050D1 (de
Inventor
Vadim Yevgenyevich Banine
Jeroen Jonkers
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
ASML Netherlands BV
Original Assignee
ASML Netherlands BV
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASML Netherlands BV, Koninklijke Philips Electronics NV filed Critical ASML Netherlands BV
Application granted granted Critical
Publication of DE60127050D1 publication Critical patent/DE60127050D1/de
Publication of DE60127050T2 publication Critical patent/DE60127050T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70983—Optical system protection, e.g. pellicles or removable covers for protection of mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70933—Purge, e.g. exchanging fluid or gas to remove pollutants
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties

Landscapes

  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
DE60127050T 2000-09-04 2001-08-31 Lithographischer Projektionsapparat Expired - Lifetime DE60127050T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP00307608 2000-09-04
EP00307608 2000-09-04

Publications (2)

Publication Number Publication Date
DE60127050D1 DE60127050D1 (de) 2007-04-19
DE60127050T2 true DE60127050T2 (de) 2007-12-13

Family

ID=8173241

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60127050T Expired - Lifetime DE60127050T2 (de) 2000-09-04 2001-08-31 Lithographischer Projektionsapparat

Country Status (6)

Country Link
US (1) US7671965B2 (https=)
EP (1) EP1186957B1 (https=)
JP (2) JP4067078B2 (https=)
KR (1) KR100656582B1 (https=)
DE (1) DE60127050T2 (https=)
TW (1) TW548524B (https=)

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DE60043998D1 (de) * 2000-12-21 2010-04-22 Euv Llc Reduction de la contamination superficielle causee par des radiations
US6664554B2 (en) * 2001-01-03 2003-12-16 Euv Llc Self-cleaning optic for extreme ultraviolet lithography
US7050149B2 (en) 2002-06-11 2006-05-23 Nikon Corporation Exposure apparatus and exposure method
JPWO2003105203A1 (ja) * 2002-06-11 2005-10-13 株式会社ニコン 露光装置及び露光方法
US20040105084A1 (en) * 2002-09-30 2004-06-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1403715A3 (en) * 2002-09-30 2006-01-18 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
DE10309084A1 (de) 2003-03-03 2004-09-16 Carl Zeiss Smt Ag Reflektives optisches Element und EUV-Lithographiegerät
US7217940B2 (en) * 2003-04-08 2007-05-15 Cymer, Inc. Collector for EUV light source
DE10319005A1 (de) 2003-04-25 2004-11-25 Carl Zeiss Smt Ag Reflektives optisches Element, optisches System und EUV-Lithographievorrichtung
DE10321103A1 (de) * 2003-05-09 2004-12-02 Carl Zeiss Smt Ag Verfahren zur Vermeidung von Kontamination und EUV-Lithographievorrichtung
JP4613167B2 (ja) * 2003-05-22 2011-01-12 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 少なくとも一つの光学要素を洗浄する方法および装置
DE10342239B4 (de) * 2003-09-11 2018-06-07 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und Vorrichtung zum Erzeugen von Extrem-Ultraviolettstrahlung oder weicher Röntgenstrahlung
EP1522895B1 (en) * 2003-10-06 2006-11-02 ASML Netherlands B.V. Method of and apparatus for supplying a dynamic protective layer to a mirror
US7208746B2 (en) * 2004-07-14 2007-04-24 Asml Netherlands B.V. Radiation generating device, lithographic apparatus, device manufacturing method and device manufactured thereby
US7355672B2 (en) * 2004-10-04 2008-04-08 Asml Netherlands B.V. Method for the removal of deposition on an optical element, method for the protection of an optical element, device manufacturing method, apparatus including an optical element, and lithographic apparatus
GB0426036D0 (en) * 2004-11-26 2004-12-29 Boc Group Plc Protection of surfaces exposed to charged particles
US7211810B2 (en) * 2004-12-29 2007-05-01 Asml Netherlands B.V. Method for the protection of an optical element, lithographic apparatus, and device manufacturing method
US7701554B2 (en) 2004-12-29 2010-04-20 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method, and optical component
US7868304B2 (en) * 2005-02-07 2011-01-11 Asml Netherlands B.V. Method for removal of deposition on an optical element, lithographic apparatus, device manufacturing method, and device manufactured thereby
US7365349B2 (en) * 2005-06-27 2008-04-29 Cymer, Inc. EUV light source collector lifetime improvements
US7141806B1 (en) * 2005-06-27 2006-11-28 Cymer, Inc. EUV light source collector erosion mitigation
US7561247B2 (en) * 2005-08-22 2009-07-14 Asml Netherlands B.V. Method for the removal of deposition on an optical element, method for the protection of an optical element, device manufacturing method, apparatus including an optical element, and lithographic apparatus
JP2007214253A (ja) * 2006-02-08 2007-08-23 Ushio Inc 極端紫外光光源装置および極端紫外光光源装置における集光光学手段の保護方法
JP2007234822A (ja) * 2006-02-28 2007-09-13 Canon Inc 露光装置及びその制御方法並びにデバイス製造方法
GB0605725D0 (en) * 2006-03-23 2006-05-03 Boc Group Plc Spectral filter repair
JP2008263173A (ja) * 2007-03-16 2008-10-30 Canon Inc 露光装置
KR101333032B1 (ko) 2007-06-12 2013-11-26 코닌클리케 필립스 엔.브이. 감소된 반사율을 향상시키기 위하여 ｅｕｖ 광 컴포넌트를 인시추 처리하는 광학 장치 및 방법
JP2009272347A (ja) * 2008-04-30 2009-11-19 Toshiba Corp 光反射型マスク、露光装置、測定方法、及び半導体装置の製造方法
DE102008028868A1 (de) * 2008-06-19 2009-12-24 Carl Zeiss Smt Ag Optische Baugruppe
DE102009043824A1 (de) * 2009-08-21 2011-02-24 Asml Netherlands B.V. Reflektives optisches Element und Verfahren zu dessen Herstellung
CN108107681A (zh) * 2016-11-25 2018-06-01 中国科学院长春光学精密机械与物理研究所 一种光刻投影物镜腔体精密监控装置
DE102021212018B3 (de) 2021-10-25 2022-11-10 Carl Zeiss Smt Gmbh Projektionsbelichtungsanlage, Verfahren zum Betreiben der Projektionsbelichtungsanlage

Family Cites Families (24)

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JPS58225636A (ja) * 1982-06-25 1983-12-27 バッテル・ディベロプメント・コーポレーション Ｘ線を対象物に照射する装置
JPH0682601B2 (ja) * 1985-12-04 1994-10-19 株式会社日立製作所 Ｘ線露光装置用ミラ−
EP0286306B1 (en) * 1987-04-03 1993-10-06 Fujitsu Limited Method and apparatus for vapor deposition of diamond
US5523193A (en) * 1988-05-31 1996-06-04 Texas Instruments Incorporated Method and apparatus for patterning and imaging member
JP2725295B2 (ja) * 1988-08-02 1998-03-11 日本電気株式会社 シンクロトロン放射光露光装置
EP0527166B1 (de) * 1990-05-02 1995-06-14 Fraunhofer-Gesellschaft Zur Förderung Der Angewandten Forschung E.V. Belichtungsvorrichtung
JPH04233717A (ja) * 1990-12-28 1992-08-21 Canon Inc Ｘ線露光装置
US5229872A (en) * 1992-01-21 1993-07-20 Hughes Aircraft Company Exposure device including an electrically aligned electronic mask for micropatterning
JPH0720293A (ja) * 1993-06-30 1995-01-24 Canon Inc Ｘ線ミラー及びこれを用いたｘ線露光装置とデバイス製造方法
US5593800A (en) * 1994-01-06 1997-01-14 Canon Kabushiki Kaisha Mask manufacturing method and apparatus and device manufacturing method using a mask manufactured by the method or apparatus
JP3599370B2 (ja) * 1994-05-23 2004-12-08 日本碍子株式会社 水素製造装置
WO1997033205A1 (en) * 1996-03-06 1997-09-12 Philips Electronics N.V. Differential interferometer system and lithographic step-and-scan apparatus provided with such a system
FR2752386B1 (fr) * 1996-08-14 1998-09-11 Commissariat Energie Atomique Procede de nettoyage ou de decontamination d'un objet au moyen d'un faisceau laser ultraviolet et dispositif pour sa mise en oeuvre
EP0918984B1 (de) * 1996-08-16 2001-06-27 Zeptosens AG Optische detektionsvorrichtung
JPH1090496A (ja) * 1996-09-19 1998-04-10 Nikon Corp 反射型光学素子及びこれを用いた反射型光学系
WO1998028665A1 (en) * 1996-12-24 1998-07-02 Koninklijke Philips Electronics N.V. Two-dimensionally balanced positioning device with two object holders, and lithographic device provided with such a positioning device
JPH10221499A (ja) * 1997-02-07 1998-08-21 Hitachi Ltd レーザプラズマｘ線源およびそれを用いた半導体露光装置並びに半導体露光方法
AU8885198A (en) * 1997-08-26 1999-03-16 Nikon Corporation Aligner, exposure method, method of pressure adjustment of projection optical system, and method of assembling aligner
JP2000091207A (ja) * 1998-09-14 2000-03-31 Nikon Corp 投影露光装置及び投影光学系の洗浄方法
US6198792B1 (en) * 1998-11-06 2001-03-06 Euv Llc Wafer chamber having a gas curtain for extreme-UV lithography
JP2000173893A (ja) * 1998-12-04 2000-06-23 Nikon Corp 投影露光装置及び光学素子の汚染判別方法
US6533952B2 (en) * 1999-06-08 2003-03-18 Euv Llc Mitigation of radiation induced surface contamination
US6304630B1 (en) * 1999-12-24 2001-10-16 U.S. Philips Corporation Method of generating EUV radiation, method of manufacturing a device by means of said radiation, EUV radiation source unit, and lithographic projection apparatus provided with such a radiation source unit
US6421421B1 (en) * 2000-05-22 2002-07-16 Plex, Llc Extreme ultraviolet based on colliding neutral beams

Also Published As

Publication number Publication date
DE60127050D1 (de) 2007-04-19
JP4743440B2 (ja) 2011-08-10
KR20020018957A (ko) 2002-03-09
KR100656582B1 (ko) 2006-12-12
EP1186957B1 (en) 2007-03-07
US20020051124A1 (en) 2002-05-02
JP4067078B2 (ja) 2008-03-26
JP2002110539A (ja) 2002-04-12
JP2008098651A (ja) 2008-04-24
TW548524B (en) 2003-08-21
EP1186957A3 (en) 2005-02-16
EP1186957A2 (en) 2002-03-13
US7671965B2 (en) 2010-03-02

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