DE60117631D1 - Beschichtungszusammensetzung für die Filmherstellung, Verfahren zur Filmherstellung und Silica-Filme - Google Patents
Beschichtungszusammensetzung für die Filmherstellung, Verfahren zur Filmherstellung und Silica-FilmeInfo
- Publication number
- DE60117631D1 DE60117631D1 DE60117631T DE60117631T DE60117631D1 DE 60117631 D1 DE60117631 D1 DE 60117631D1 DE 60117631 T DE60117631 T DE 60117631T DE 60117631 T DE60117631 T DE 60117631T DE 60117631 D1 DE60117631 D1 DE 60117631D1
- Authority
- DE
- Germany
- Prior art keywords
- film production
- coating composition
- silica films
- films
- silica
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title 2
- 238000004519 manufacturing process Methods 0.000 title 2
- 239000008199 coating composition Substances 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000000377 silicon dioxide Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/06—Preparatory processes
- C08G77/08—Preparatory processes characterised by the catalysts used
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/48—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
- C08G77/50—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms by carbon linkages
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/04—Polysiloxanes
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/14—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
- H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/312—Organic layers, e.g. photoresist
- H01L21/3121—Layers comprising organo-silicon compounds
- H01L21/3122—Layers comprising organo-silicon compounds layers comprising polysiloxane compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02203—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being porous
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31652—Of asbestos
- Y10T428/31663—As siloxane, silicone or silane
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Wood Science & Technology (AREA)
- Polymers & Plastics (AREA)
- Medicinal Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Health & Medical Sciences (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Paints Or Removers (AREA)
- Formation Of Insulating Films (AREA)
- Silicon Compounds (AREA)
- Silicon Polymers (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000108311 | 2000-04-10 | ||
JP2000108311 | 2000-04-10 | ||
JP2000363513 | 2000-11-29 | ||
JP2000363513A JP4195773B2 (ja) | 2000-04-10 | 2000-11-29 | 層間絶縁膜形成用組成物、層間絶縁膜の形成方法およびシリカ系層間絶縁膜 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60117631D1 true DE60117631D1 (de) | 2006-05-04 |
DE60117631T2 DE60117631T2 (de) | 2006-10-05 |
Family
ID=26589799
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE2001617631 Expired - Lifetime DE60117631T2 (de) | 2000-04-10 | 2001-04-09 | Beschichtungszusammensetzung für die Filmherstellung, Verfahren zur Filmherstellung und Silica-Filme |
Country Status (6)
Country | Link |
---|---|
US (1) | US6495264B2 (de) |
EP (1) | EP1146092B1 (de) |
JP (1) | JP4195773B2 (de) |
KR (1) | KR100739952B1 (de) |
DE (1) | DE60117631T2 (de) |
TW (1) | TWI286155B (de) |
Families Citing this family (67)
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US7128976B2 (en) * | 2000-04-10 | 2006-10-31 | Jsr Corporation | Composition for film formation, method of film formation, and silica-based film |
TW524883B (en) * | 2000-05-22 | 2003-03-21 | Jsr Corp | Composition for film formation, process for producing composition for film formation, method of film formation, and silica-based film |
JP2002285086A (ja) * | 2001-03-26 | 2002-10-03 | Jsr Corp | 膜形成用組成物、膜の形成方法およびシリカ系膜 |
KR20020095103A (ko) | 2001-06-11 | 2002-12-20 | 제이에스알 가부시끼가이샤 | 실리카막의 형성 방법, 실리카막, 절연막 및 반도체 장치 |
JP2003064307A (ja) * | 2001-08-28 | 2003-03-05 | Hitachi Chem Co Ltd | シリカ系被膜、シリカ系被膜形成用組成物、シリカ系被膜の製造方法及び電子部品 |
JP4972834B2 (ja) * | 2001-08-28 | 2012-07-11 | 日立化成工業株式会社 | シロキサン樹脂 |
JP2003100738A (ja) | 2001-09-25 | 2003-04-04 | Jsr Corp | 積層体、積層体の形成方法、絶縁膜ならびに半導体用基板 |
TW200303846A (en) * | 2002-02-06 | 2003-09-16 | Asahi Chemical Ind | Coating compositions for forming insulating thin films |
JP4110797B2 (ja) * | 2002-02-27 | 2008-07-02 | 日立化成工業株式会社 | シリカ系被膜形成用組成物、シリカ系被膜の製造方法及び電子部品 |
JP2004165613A (ja) * | 2002-06-03 | 2004-06-10 | Shipley Co Llc | 電子デバイスの製造 |
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JP2004107494A (ja) * | 2002-09-18 | 2004-04-08 | National Institute For Materials Science | 熱可塑性層状アルキルシロキサンとその製造方法 |
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JP3884699B2 (ja) | 2002-11-13 | 2007-02-21 | 信越化学工業株式会社 | 多孔質膜形成用組成物、多孔質膜とその製造方法、層間絶縁膜及び半導体装置 |
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US8736014B2 (en) * | 2008-11-14 | 2014-05-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | High mechanical strength additives for porous ultra low-k material |
JP5565314B2 (ja) * | 2008-12-08 | 2014-08-06 | 富士通株式会社 | 半導体装置の製造方法及びその製造装置 |
US8557877B2 (en) | 2009-06-10 | 2013-10-15 | Honeywell International Inc. | Anti-reflective coatings for optically transparent substrates |
JP5731984B2 (ja) * | 2009-09-28 | 2015-06-10 | 京セラ株式会社 | 構造体 |
KR20110125156A (ko) | 2010-05-12 | 2011-11-18 | 제일모직주식회사 | 투광성 수지 조성물, 상기 투광성 수지 조성물을 사용하여 형성된 봉지재 및 상기 봉지재를 포함하는 전자 소자 |
JP5617476B2 (ja) * | 2010-09-22 | 2014-11-05 | Jsr株式会社 | シロキサンポリマー組成物、硬化膜及び硬化膜の形成方法 |
US8864898B2 (en) | 2011-05-31 | 2014-10-21 | Honeywell International Inc. | Coating formulations for optical elements |
WO2016146895A2 (en) * | 2015-03-17 | 2016-09-22 | Optitune Oy | Scratch resistant, easy-to-clean coatings, methods of producing the same and the use thereof |
JP6803842B2 (ja) | 2015-04-13 | 2020-12-23 | ハネウェル・インターナショナル・インコーポレーテッドHoneywell International Inc. | オプトエレクトロニクス用途のためのポリシロキサン製剤及びコーティング |
US10947412B2 (en) * | 2017-12-19 | 2021-03-16 | Honeywell International Inc. | Crack-resistant silicon-based planarizing compositions, methods and films |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
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US4214057A (en) * | 1978-02-15 | 1980-07-22 | Asahi Kasei Kogyo Kabushiki Kaisha | Coating composition for plastic substrates |
JPH0791509B2 (ja) * | 1985-12-17 | 1995-10-04 | 住友化学工業株式会社 | 半導体用絶縁膜形成塗布液 |
US5733644A (en) * | 1994-04-15 | 1998-03-31 | Mitsubishi Chemical Corporation | Curable composition and method for preparing the same |
-
2000
- 2000-11-29 JP JP2000363513A patent/JP4195773B2/ja not_active Expired - Fee Related
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2001
- 2001-04-09 KR KR1020010018551A patent/KR100739952B1/ko not_active IP Right Cessation
- 2001-04-09 EP EP20010108846 patent/EP1146092B1/de not_active Expired - Lifetime
- 2001-04-09 DE DE2001617631 patent/DE60117631T2/de not_active Expired - Lifetime
- 2001-04-09 US US09/827,902 patent/US6495264B2/en not_active Expired - Lifetime
- 2001-04-10 TW TW90108711A patent/TWI286155B/zh not_active IP Right Cessation
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EP1146092A2 (de) | 2001-10-17 |
KR20010100880A (ko) | 2001-11-14 |
US6495264B2 (en) | 2002-12-17 |
EP1146092A3 (de) | 2002-12-18 |
TWI286155B (en) | 2007-09-01 |
KR100739952B1 (ko) | 2007-07-16 |
US20020020327A1 (en) | 2002-02-21 |
JP2001354904A (ja) | 2001-12-25 |
DE60117631T2 (de) | 2006-10-05 |
JP4195773B2 (ja) | 2008-12-10 |
EP1146092B1 (de) | 2006-03-08 |
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