DE60043285D1 - Beschichtungszusammensetzung für die Filmherstellung, Verfahren zur Filmherstellung und isolierende Filme - Google Patents
Beschichtungszusammensetzung für die Filmherstellung, Verfahren zur Filmherstellung und isolierende FilmeInfo
- Publication number
- DE60043285D1 DE60043285D1 DE60043285T DE60043285T DE60043285D1 DE 60043285 D1 DE60043285 D1 DE 60043285D1 DE 60043285 T DE60043285 T DE 60043285T DE 60043285 T DE60043285 T DE 60043285T DE 60043285 D1 DE60043285 D1 DE 60043285D1
- Authority
- DE
- Germany
- Prior art keywords
- film production
- coating composition
- insulating films
- film
- production
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title 2
- 239000008199 coating composition Substances 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/312—Organic layers, e.g. photoresist
- H01L21/3121—Layers comprising organo-silicon compounds
- H01L21/3122—Layers comprising organo-silicon compounds layers comprising polysiloxane compounds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
- C08L83/04—Polysiloxanes
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/04—Polysiloxanes
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/14—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
- H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31652—Of asbestos
- Y10T428/31663—As siloxane, silicone or silane
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Wood Science & Technology (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Computer Hardware Design (AREA)
- Life Sciences & Earth Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Polymers & Plastics (AREA)
- Medicinal Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Paints Or Removers (AREA)
- Silicon Polymers (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP27555399 | 1999-09-29 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60043285D1 true DE60043285D1 (de) | 2009-12-24 |
Family
ID=17557063
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60043285T Expired - Lifetime DE60043285D1 (de) | 1999-09-29 | 2000-09-28 | Beschichtungszusammensetzung für die Filmherstellung, Verfahren zur Filmherstellung und isolierende Filme |
Country Status (5)
Country | Link |
---|---|
US (1) | US6410150B1 (de) |
EP (1) | EP1090967B1 (de) |
KR (1) | KR100619647B1 (de) |
DE (1) | DE60043285D1 (de) |
TW (1) | TW530083B (de) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100677782B1 (ko) * | 2000-01-17 | 2007-02-05 | 제이에스알 가부시끼가이샤 | 절연막 형성용 재료의 제조 방법 |
US6902771B2 (en) * | 2000-02-01 | 2005-06-07 | Jsr Corporation | Process for producing silica-based film, silica-based film, insulating film, and semiconductor device |
US7128976B2 (en) * | 2000-04-10 | 2006-10-31 | Jsr Corporation | Composition for film formation, method of film formation, and silica-based film |
JP2002012638A (ja) * | 2000-06-30 | 2002-01-15 | Dow Corning Toray Silicone Co Ltd | 高エネルギー線硬化性組成物および樹脂成形体 |
JP2002285086A (ja) * | 2001-03-26 | 2002-10-03 | Jsr Corp | 膜形成用組成物、膜の形成方法およびシリカ系膜 |
KR20020095103A (ko) | 2001-06-11 | 2002-12-20 | 제이에스알 가부시끼가이샤 | 실리카막의 형성 방법, 실리카막, 절연막 및 반도체 장치 |
JP2003100738A (ja) * | 2001-09-25 | 2003-04-04 | Jsr Corp | 積層体、積層体の形成方法、絶縁膜ならびに半導体用基板 |
US7122880B2 (en) | 2002-05-30 | 2006-10-17 | Air Products And Chemicals, Inc. | Compositions for preparing low dielectric materials |
US7307343B2 (en) | 2002-05-30 | 2007-12-11 | Air Products And Chemicals, Inc. | Low dielectric materials and methods for making same |
JP2004269693A (ja) * | 2003-03-10 | 2004-09-30 | Shin Etsu Chem Co Ltd | 多孔質膜形成用組成物及びその製造方法、多孔質膜の製造方法、多孔質膜、層間絶縁膜、及び半導体装置 |
US20040198882A1 (en) * | 2003-03-31 | 2004-10-07 | Fuji Photo Film Co., Ltd. | Silica-containing coating composition for forming films and method for forming silica-containing films |
US7345351B2 (en) | 2003-04-09 | 2008-03-18 | Lg Chem, Ltd. | Coating composition for insulating film production, preparation method of insulation film by using the same, insulation film for semi-conductor device prepared therefrom, and semi-conductor device comprising the same |
JP4465233B2 (ja) | 2003-06-30 | 2010-05-19 | 三星電子株式会社 | 多官能性環状シロキサン化合物、この化合物から製造されたシロキサン系重合体及びこの重合体を用いた絶縁膜の製造方法 |
US7504470B2 (en) * | 2004-08-31 | 2009-03-17 | Silecs Oy | Polyorganosiloxane dielectric materials |
JP4437456B2 (ja) * | 2005-04-20 | 2010-03-24 | 東京応化工業株式会社 | 塗膜形成方法 |
JP2008201833A (ja) * | 2007-02-16 | 2008-09-04 | Shin Etsu Chem Co Ltd | 膜形成用組成物、低誘電率絶縁膜、低誘電率絶縁膜の形成方法及び半導体装置 |
JP2008201832A (ja) * | 2007-02-16 | 2008-09-04 | Shin Etsu Chem Co Ltd | シロキサン重合体とその製造方法、該重合体を含有する多孔質膜形成用塗布液ならびに多孔質膜と、該多孔質膜を用いた半導体装置 |
JP2008205008A (ja) * | 2007-02-16 | 2008-09-04 | Shin Etsu Chem Co Ltd | 半導体層間絶縁膜形成用組成物とその製造方法、膜形成方法と半導体装置 |
US8642246B2 (en) | 2007-02-26 | 2014-02-04 | Honeywell International Inc. | Compositions, coatings and films for tri-layer patterning applications and methods of preparation thereof |
EP2128897B1 (de) * | 2007-03-16 | 2015-05-06 | Fujitsu Limited | Siliziumdielektrikum-behandlungsmittel zur verwendung nach dem ätzen, verfahren zur herstellung eines halbleiterbauelements und halbleiterbauelement |
US8557877B2 (en) | 2009-06-10 | 2013-10-15 | Honeywell International Inc. | Anti-reflective coatings for optically transparent substrates |
US8864898B2 (en) | 2011-05-31 | 2014-10-21 | Honeywell International Inc. | Coating formulations for optical elements |
JP5991846B2 (ja) * | 2012-04-24 | 2016-09-14 | 東京応化工業株式会社 | 膜形成用組成物、拡散剤組成物、膜形成用組成物の製造方法、及び拡散剤組成物の製造方法 |
JP6803842B2 (ja) | 2015-04-13 | 2020-12-23 | ハネウェル・インターナショナル・インコーポレーテッドHoneywell International Inc. | オプトエレクトロニクス用途のためのポリシロキサン製剤及びコーティング |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03188179A (ja) * | 1989-12-15 | 1991-08-16 | Hitachi Chem Co Ltd | シリカ系被膜形成用塗布液,半導体基板の製造法および半導体デバイス |
JP3517890B2 (ja) * | 1993-02-18 | 2004-04-12 | 日産化学工業株式会社 | 液晶表示素子用絶縁膜形成用塗布液 |
US5733644A (en) * | 1994-04-15 | 1998-03-31 | Mitsubishi Chemical Corporation | Curable composition and method for preparing the same |
JPH1025417A (ja) * | 1996-07-08 | 1998-01-27 | Toray Dow Corning Silicone Co Ltd | 硬化性液状組成物、その硬化物、および電子部品 |
US6043330A (en) * | 1997-04-21 | 2000-03-28 | Alliedsignal Inc. | Synthesis of siloxane resins |
US6090448A (en) * | 1997-10-31 | 2000-07-18 | Alliedsignal Inc. | Polyol-based precursors for producing nanoporous silica thin films |
-
2000
- 2000-09-27 US US09/669,859 patent/US6410150B1/en not_active Expired - Lifetime
- 2000-09-28 DE DE60043285T patent/DE60043285D1/de not_active Expired - Lifetime
- 2000-09-28 KR KR1020000056972A patent/KR100619647B1/ko not_active IP Right Cessation
- 2000-09-28 EP EP20000121101 patent/EP1090967B1/de not_active Expired - Lifetime
- 2000-09-29 TW TW89120207A patent/TW530083B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP1090967B1 (de) | 2009-11-11 |
US6410150B1 (en) | 2002-06-25 |
KR20010077882A (ko) | 2001-08-20 |
KR100619647B1 (ko) | 2006-09-06 |
EP1090967A3 (de) | 2003-10-22 |
TW530083B (en) | 2003-05-01 |
EP1090967A2 (de) | 2001-04-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |