JP4437456B2 - 塗膜形成方法 - Google Patents
塗膜形成方法 Download PDFInfo
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- JP4437456B2 JP4437456B2 JP2005121788A JP2005121788A JP4437456B2 JP 4437456 B2 JP4437456 B2 JP 4437456B2 JP 2005121788 A JP2005121788 A JP 2005121788A JP 2005121788 A JP2005121788 A JP 2005121788A JP 4437456 B2 JP4437456 B2 JP 4437456B2
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- 125000000962 organic group Chemical group 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/28—Surface treatment of glass, not in the form of fibres or filaments, by coating with organic material
- C03C17/30—Surface treatment of glass, not in the form of fibres or filaments, by coating with organic material with silicon-containing compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
- H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
Landscapes
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Formation Of Insulating Films (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
Description
一般式 RnSi(OR1)4−n・・・・・・・・・・・・・・・(I)
(式中、Rは炭素数1〜4のアルキル基、アリール基、R1は炭素数が1〜4のアルキル基、nは1または2である。)
Claims (3)
- 被処理物上にSOG膜形成用塗布液を塗布し、加熱処理工程を経てSOG膜を被処理物上に形成する塗膜形成方法であって、この加熱処理工程を乾燥工程およびそれに続く焼成工程に分け、前記乾燥工程においては、被処理物表面温度範囲を3段階とし、第1段階を50〜100℃、第2段階を101〜170℃、第3段階を171〜350℃と設定し、各段階にける加熱時間を1〜3分の範囲とし且つ温度の変動範囲を4〜6℃として、低温から段階的に温度を上昇させて前記被処理物を加熱し、次の焼成工程においては、被処理物表面温度をさらに上昇させ250〜500℃の範囲で、かつ±3℃の範囲に保持して前記被処理物の加熱処理を行ってSOG膜を形成することを特徴とする塗膜形成方法。
- 請求項1に記載の塗膜形成方法において、前記焼成工程がバッチ式処理であって、その加熱時間を10〜60分の範囲で設定することを特徴とする塗膜形成方法。
- 請求項1に記載の塗膜形成方法において、前記焼成工程は、枚葉型処理により、前記被処理物を1枚ずつ焼成する工程であって、その加熱時間を10〜30分の範囲で設定することを特徴とする塗膜形成方法。
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JP2005121788A JP4437456B2 (ja) | 2005-04-20 | 2005-04-20 | 塗膜形成方法 |
TW095112484A TWI341558B (en) | 2005-04-20 | 2006-04-07 | Coating film forming method |
KR1020060033949A KR100823819B1 (ko) | 2005-04-20 | 2006-04-14 | 도막 형성방법 |
US11/404,968 US7601396B2 (en) | 2005-04-20 | 2006-04-14 | Coating film forming method |
CNA2006100767288A CN1854337A (zh) | 2005-04-20 | 2006-04-18 | 涂膜形成方法 |
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JP2005121788A JP4437456B2 (ja) | 2005-04-20 | 2005-04-20 | 塗膜形成方法 |
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JP4437456B2 true JP4437456B2 (ja) | 2010-03-24 |
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US (1) | US7601396B2 (ja) |
JP (1) | JP4437456B2 (ja) |
KR (1) | KR100823819B1 (ja) |
CN (1) | CN1854337A (ja) |
TW (1) | TWI341558B (ja) |
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JP2011114163A (ja) * | 2009-11-26 | 2011-06-09 | Ube Nitto Kasei Co Ltd | 素子分離材料用塗布液、素子分離材料用塗布液の作製方法、素子分離層用薄膜、素子分離層用薄膜の形成方法、基板、及び、基板の形成方法 |
JP2011114165A (ja) * | 2009-11-26 | 2011-06-09 | Ube Nitto Kasei Co Ltd | 素子分離材料用塗布液の作製方法、素子分離材料用塗布液、素子分離層用薄膜、素子分離層用薄膜の形成方法、基板、及び、基板の形成方法 |
JP5462603B2 (ja) * | 2009-11-26 | 2014-04-02 | 宇部エクシモ株式会社 | 素子分離材料用塗布液、素子分離材料用塗布液の作製方法、素子分離層用薄膜、素子分離層用薄膜の形成方法、基板、及び、基板の形成方法 |
JP2011114164A (ja) * | 2009-11-26 | 2011-06-09 | Ube Nitto Kasei Co Ltd | 素子分離材料用塗布液の作製方法、素子分離材料用塗布液、素子分離層用薄膜、素子分離層用薄膜の形成方法、基板、及び、基板の形成方法 |
EP2355141A3 (en) * | 2010-02-08 | 2017-09-20 | Fujifilm Corporation | Semiconductor device, method for producing the semiconductor device, substrate for semiconductor element and method for producing the substrate |
JP6471392B2 (ja) * | 2015-02-12 | 2019-02-20 | 上村工業株式会社 | 無電解めっき用前処理剤、並びに前記無電解めっき用前処理剤を用いたプリント配線基板の前処理方法およびその製造方法 |
US10966327B2 (en) * | 2016-01-29 | 2021-03-30 | Jcu Corporation | Method for forming circuit on substrate |
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JP3909912B2 (ja) | 1997-05-09 | 2007-04-25 | 東京応化工業株式会社 | シリカ系厚膜被膜形成方法 |
JP3635443B2 (ja) | 1997-05-12 | 2005-04-06 | 東京応化工業株式会社 | SiO2被膜の形成方法 |
US6410150B1 (en) * | 1999-09-29 | 2002-06-25 | Jsr Corporation | Composition for film formation, method of film formation, and insulating film |
KR100354441B1 (en) * | 2000-12-27 | 2002-09-28 | Samsung Electronics Co Ltd | Method for fabricating spin-on-glass insulation layer of semiconductor device |
EP1428098B1 (en) * | 2001-08-01 | 2006-12-20 | Matsushita Electric Industrial Co., Ltd. | Device and method for managing content usage right |
WO2003065182A1 (en) * | 2002-02-01 | 2003-08-07 | Matsushita Electric Industrial Co., Ltd. | License information exchange system |
US7298717B2 (en) * | 2002-02-15 | 2007-11-20 | Texas Instruments Incorporated | Method and apparatus for providing transmit diversity with adaptive basis |
US7315896B2 (en) * | 2002-06-06 | 2008-01-01 | International Business Machines Corporation | Server network controller including packet forwarding and method therefor |
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- 2006-04-14 KR KR1020060033949A patent/KR100823819B1/ko active IP Right Grant
- 2006-04-14 US US11/404,968 patent/US7601396B2/en active Active
- 2006-04-18 CN CNA2006100767288A patent/CN1854337A/zh active Pending
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TWI341558B (en) | 2011-05-01 |
KR20060110777A (ko) | 2006-10-25 |
CN1854337A (zh) | 2006-11-01 |
TW200705125A (en) | 2007-02-01 |
JP2006303129A (ja) | 2006-11-02 |
US7601396B2 (en) | 2009-10-13 |
US20060240186A1 (en) | 2006-10-26 |
KR100823819B1 (ko) | 2008-04-21 |
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