TWI341558B - Coating film forming method - Google Patents

Coating film forming method

Info

Publication number
TWI341558B
TWI341558B TW095112484A TW95112484A TWI341558B TW I341558 B TWI341558 B TW I341558B TW 095112484 A TW095112484 A TW 095112484A TW 95112484 A TW95112484 A TW 95112484A TW I341558 B TWI341558 B TW I341558B
Authority
TW
Taiwan
Prior art keywords
coating film
film forming
forming method
coating
forming
Prior art date
Application number
TW095112484A
Other languages
English (en)
Other versions
TW200705125A (en
Inventor
Akihiko Nakamura
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Publication of TW200705125A publication Critical patent/TW200705125A/zh
Application granted granted Critical
Publication of TWI341558B publication Critical patent/TWI341558B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/28—Surface treatment of glass, not in the form of fibres or filaments, by coating with organic material
    • C03C17/30—Surface treatment of glass, not in the form of fibres or filaments, by coating with organic material with silicon-containing compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane

Landscapes

  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
TW095112484A 2005-04-20 2006-04-07 Coating film forming method TWI341558B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005121788A JP4437456B2 (ja) 2005-04-20 2005-04-20 塗膜形成方法

Publications (2)

Publication Number Publication Date
TW200705125A TW200705125A (en) 2007-02-01
TWI341558B true TWI341558B (en) 2011-05-01

Family

ID=37187280

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095112484A TWI341558B (en) 2005-04-20 2006-04-07 Coating film forming method

Country Status (5)

Country Link
US (1) US7601396B2 (zh)
JP (1) JP4437456B2 (zh)
KR (1) KR100823819B1 (zh)
CN (1) CN1854337A (zh)
TW (1) TWI341558B (zh)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5462603B2 (ja) * 2009-11-26 2014-04-02 宇部エクシモ株式会社 素子分離材料用塗布液、素子分離材料用塗布液の作製方法、素子分離層用薄膜、素子分離層用薄膜の形成方法、基板、及び、基板の形成方法
JP2011114164A (ja) * 2009-11-26 2011-06-09 Ube Nitto Kasei Co Ltd 素子分離材料用塗布液の作製方法、素子分離材料用塗布液、素子分離層用薄膜、素子分離層用薄膜の形成方法、基板、及び、基板の形成方法
JP2011114163A (ja) * 2009-11-26 2011-06-09 Ube Nitto Kasei Co Ltd 素子分離材料用塗布液、素子分離材料用塗布液の作製方法、素子分離層用薄膜、素子分離層用薄膜の形成方法、基板、及び、基板の形成方法
JP2011114165A (ja) * 2009-11-26 2011-06-09 Ube Nitto Kasei Co Ltd 素子分離材料用塗布液の作製方法、素子分離材料用塗布液、素子分離層用薄膜、素子分離層用薄膜の形成方法、基板、及び、基板の形成方法
US20110193103A1 (en) * 2010-02-08 2011-08-11 Fujifilm Corporation Semiconductor device, method for producing the semiconductor device, substrate for semiconductor element and method for producing the substrate
JP6471392B2 (ja) * 2015-02-12 2019-02-20 上村工業株式会社 無電解めっき用前処理剤、並びに前記無電解めっき用前処理剤を用いたプリント配線基板の前処理方法およびその製造方法
EP3409814A4 (en) * 2016-01-29 2019-08-28 JCU Corporation METHOD FOR FORMING A CIRCUIT ON A SUBSTRATE

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3909912B2 (ja) 1997-05-09 2007-04-25 東京応化工業株式会社 シリカ系厚膜被膜形成方法
JP3635443B2 (ja) 1997-05-12 2005-04-06 東京応化工業株式会社 ＳｉＯ２被膜の形成方法
US6410150B1 (en) * 1999-09-29 2002-06-25 Jsr Corporation Composition for film formation, method of film formation, and insulating film
KR100354441B1 (en) * 2000-12-27 2002-09-28 Samsung Electronics Co Ltd Method for fabricating spin-on-glass insulation layer of semiconductor device
EP1428098B1 (en) * 2001-08-01 2006-12-20 Matsushita Electric Industrial Co., Ltd. Device and method for managing content usage right
KR100958229B1 (ko) * 2002-02-01 2010-05-17 파나소닉 주식회사 가치 정보 교환 시스템
US7298717B2 (en) * 2002-02-15 2007-11-20 Texas Instruments Incorporated Method and apparatus for providing transmit diversity with adaptive basis
US7315896B2 (en) * 2002-06-06 2008-01-01 International Business Machines Corporation Server network controller including packet forwarding and method therefor

Also Published As

Publication number Publication date
US7601396B2 (en) 2009-10-13
KR20060110777A (ko) 2006-10-25
TW200705125A (en) 2007-02-01
US20060240186A1 (en) 2006-10-26
JP4437456B2 (ja) 2010-03-24
KR100823819B1 (ko) 2008-04-21
JP2006303129A (ja) 2006-11-02
CN1854337A (zh) 2006-11-01

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