DE60037526D1 - P-typ zinkoxid-einkristall mit niedrigem widerstand und herstellungsverfahren dafür - Google Patents

P-typ zinkoxid-einkristall mit niedrigem widerstand und herstellungsverfahren dafür

Info

Publication number
DE60037526D1
DE60037526D1 DE60037526T DE60037526T DE60037526D1 DE 60037526 D1 DE60037526 D1 DE 60037526D1 DE 60037526 T DE60037526 T DE 60037526T DE 60037526 T DE60037526 T DE 60037526T DE 60037526 D1 DE60037526 D1 DE 60037526D1
Authority
DE
Germany
Prior art keywords
zincoxide
crystal
manufacturing
type
low resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60037526T
Other languages
English (en)
Other versions
DE60037526T2 (de
Inventor
Tetsuya Yamamoto
Hiroshi Yoshida
Takafumi Yao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kochi University of Technology
Original Assignee
Japan Science and Technology Agency
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Science and Technology Agency filed Critical Japan Science and Technology Agency
Application granted granted Critical
Publication of DE60037526D1 publication Critical patent/DE60037526D1/de
Publication of DE60037526T2 publication Critical patent/DE60037526T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
DE60037526T 1999-08-13 2000-07-04 P-typ zinkoxid-einkristall mit niedrigem widerstand und herstellungsverfahren dafür Expired - Fee Related DE60037526T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP22950499A JP4126332B2 (ja) 1999-08-13 1999-08-13 低抵抗ｐ型単結晶酸化亜鉛およびその製造方法
JP22950499 1999-08-13
PCT/JP2000/004452 WO2001012884A1 (fr) 1999-08-13 2000-07-04 OXYDE DE ZINC MONOCRISTALLIN DE TYPE p PRESENTANT UNE FAIBLE RESISTIVITE ET SON PROCEDE DE PREPARATION

Publications (2)

Publication Number Publication Date
DE60037526D1 true DE60037526D1 (de) 2008-01-31
DE60037526T2 DE60037526T2 (de) 2008-10-23

Family

ID=16893218

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60037526T Expired - Fee Related DE60037526T2 (de) 1999-08-13 2000-07-04 P-typ zinkoxid-einkristall mit niedrigem widerstand und herstellungsverfahren dafür

Country Status (7)

Country Link
US (1) US6896731B1 (de)
EP (1) EP1215310B1 (de)
JP (1) JP4126332B2 (de)
KR (1) KR100494376B1 (de)
DE (1) DE60037526T2 (de)
TW (1) TW499511B (de)
WO (1) WO2001012884A1 (de)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100421800B1 (ko) * 2001-04-02 2004-03-10 한국과학기술연구원 아연산화물 반도체 제조 방법
KR20030025354A (ko) * 2001-09-20 2003-03-29 한국과학기술연구원 청색발광 ＺｎＯ 박막형광체의 제조방법
KR20030033228A (ko) * 2001-10-19 2003-05-01 (주)블루트론 p형 아연산화물 박막과 이를 적용한 화합물 반도체 및 그 제조방법
US6887736B2 (en) * 2002-06-24 2005-05-03 Cermet, Inc. Method of forming a p-type group II-VI semiconductor crystal layer on a substrate
US20040196302A1 (en) 2003-03-04 2004-10-07 Im Moon Hwan Systems and methods for temporal subpixel rendering of image data
KR100470155B1 (ko) * 2003-03-07 2005-02-04 광주과학기술원 아연산화물 반도체 제조방법
KR100666663B1 (ko) * 2003-04-30 2007-01-09 도쿠리츠교세이호징 붓시쯔 자이료 겐큐키코 산화아연 형광체와 그 제조법 및 발광장치
US7161173B2 (en) * 2003-05-20 2007-01-09 Burgener Ii Robert H P-type group II-VI semiconductor compounds
US7172813B2 (en) 2003-05-20 2007-02-06 Burgener Ii Robert H Zinc oxide crystal growth substrate
US7141489B2 (en) * 2003-05-20 2006-11-28 Burgener Ii Robert H Fabrication of p-type group II-VI semiconductors
JP4210748B2 (ja) * 2003-08-27 2009-01-21 独立行政法人物質・材料研究機構 酸化亜鉛基積層構造体
JP4386747B2 (ja) 2004-01-28 2009-12-16 三洋電機株式会社 ｐ型ＺｎＯ半導体膜及びその製造方法
US7691353B2 (en) * 2004-06-17 2010-04-06 Burgener Ii Robert H Low dielectric constant group II-VI insulator
US20070111372A1 (en) * 2004-07-20 2007-05-17 Cermet, Inc. Methods of forming a p-type group ii-vi semiconductor crystal layer on a substrate
JP4677796B2 (ja) * 2005-02-21 2011-04-27 東ソー株式会社 酸化亜鉛単結晶の製造方法
KR100698588B1 (ko) 2005-05-30 2007-03-22 원광대학교산학협력단 앰플-튜브 법을 이용한 인과 비소 도핑 피형 산화아연 박막제조방법
US20070006802A1 (en) * 2005-07-06 2007-01-11 Nause Jeffrey E N-type bulk single crystal zinc oxide
CN101283122B (zh) 2005-08-09 2011-02-09 斯坦雷电气株式会社 氧化锌晶体，它的生长方法和发光器件的生产方法
US7723154B1 (en) 2005-10-19 2010-05-25 North Carolina State University Methods of forming zinc oxide based II-VI compound semiconductor layers with shallow acceptor conductivities
US8092904B2 (en) * 2006-03-31 2012-01-10 3M Innovative Properties Company Optical article having an antistatic layer
JP5360789B2 (ja) 2006-07-06 2013-12-04 独立行政法人産業技術総合研究所 ｐ型酸化亜鉛薄膜及びその作製方法
JP2009043920A (ja) * 2007-08-08 2009-02-26 Rohm Co Ltd ｐ型ＭｇＺｎＯ系薄膜及び半導体発光素子
KR100958137B1 (ko) * 2008-02-18 2010-05-18 부산대학교 산학협력단 Ｌｉ과 Ⅶ족 불순물을 동시 도핑한 ｐ－형 ＺｎＯ반도체
TW200949004A (en) * 2008-04-25 2009-12-01 Lumenz Inc Metalorganic chemical vapor deposition of zinc oxide
KR101300560B1 (ko) * 2009-07-01 2013-09-03 삼성코닝정밀소재 주식회사 산화아연계 전도체
KR101067474B1 (ko) * 2009-09-17 2011-09-27 주식회사 퀀텀디바이스 반도체 발광소자
US7829376B1 (en) 2010-04-07 2010-11-09 Lumenz, Inc. Methods of forming zinc oxide based II-VI compound semiconductor layers with shallow acceptor conductivities
US8722456B2 (en) * 2010-09-25 2014-05-13 Hangzhou Bluelight Opto-electronic Material Co., Ltd. Method for preparing p-type ZnO-based material
JP2015502047A (ja) * 2011-11-28 2015-01-19 オーシャンズ キング ライティング サイエンス アンド テクノロジー シーオー．，エルティーディー ポリマー太陽電池、及び、その製造方法
JP6092586B2 (ja) * 2012-02-28 2017-03-08 スタンレー電気株式会社 ＺｎＯ系半導体層とその製造方法、及びＺｎＯ系半導体発光素子の製造方法
US9064790B2 (en) 2012-07-27 2015-06-23 Stanley Electric Co., Ltd. Method for producing p-type ZnO based compound semiconductor layer, method for producing ZnO based compound semiconductor element, p-type ZnO based compound semiconductor single crystal layer, ZnO based compound semiconductor element, and n-type ZnO based compound semiconductor laminate structure
JP6017243B2 (ja) 2012-09-26 2016-10-26 スタンレー電気株式会社 ＺｎＯ系半導体素子、及び、ＺｎＯ系半導体素子の製造方法
JP6100590B2 (ja) * 2013-04-16 2017-03-22 スタンレー電気株式会社 ｐ型ＺｎＯ系半導体層の製造方法、ＺｎＯ系半導体素子の製造方法、及び、ｎ型ＺｎＯ系半導体積層構造
JP6100591B2 (ja) * 2013-04-16 2017-03-22 スタンレー電気株式会社 ｐ型ＺｎＯ系半導体層の製造方法、ＺｎＯ系半導体素子の製造方法、及び、ｎ型ＺｎＯ系半導体積層構造
CN106248736A (zh) * 2016-07-14 2016-12-21 上海纳米技术及应用国家工程研究中心有限公司 乙醇敏感的Co掺杂的分级多孔结构ZnO微球及制备和应用

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4612411A (en) * 1985-06-04 1986-09-16 Atlantic Richfield Company Thin film solar cell with ZnO window layer
US5094693A (en) * 1990-02-20 1992-03-10 International Lead Zinc Research Organization, Inc. Doped zinc oxide-based pigment
US5324365A (en) * 1991-09-24 1994-06-28 Canon Kabushiki Kaisha Solar cell
US5579258A (en) * 1991-11-28 1996-11-26 Olympus Optical Co., Ltd. Ferroelectric memory
JP3410299B2 (ja) * 1996-08-08 2003-05-26 科学技術振興事業団 高濃度にドーピングしたＺｎＳｅ結晶の製造方法
US6379521B1 (en) * 1998-01-06 2002-04-30 Canon Kabushiki Kaisha Method of producing zinc oxide film, method of producing photovoltaic element, and method of producing semiconductor element substrate
US6342313B1 (en) * 1998-08-03 2002-01-29 The Curators Of The University Of Missouri Oxide films and process for preparing same
US6291085B1 (en) * 1998-08-03 2001-09-18 The Curators Of The University Of Missouri Zinc oxide films containing P-type dopant and process for preparing same
WO2000022202A1 (fr) * 1998-10-09 2000-04-20 Rohm Co., Ltd. MONOCRISTAL ZnO DE TYPE p ET PROCEDE DE FABRICATION

Also Published As

Publication number Publication date
KR20020034174A (ko) 2002-05-08
EP1215310A4 (de) 2003-05-02
EP1215310A1 (de) 2002-06-19
TW499511B (en) 2002-08-21
DE60037526T2 (de) 2008-10-23
WO2001012884A1 (fr) 2001-02-22
JP2001048698A (ja) 2001-02-20
EP1215310B1 (de) 2007-12-19
US6896731B1 (en) 2005-05-24
KR100494376B1 (ko) 2005-06-10
JP4126332B2 (ja) 2008-07-30

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Legal Events

Date Code Title Description
8327 Change in the person/name/address of the patent owner

Owner name: KOCHI UNIVERSITY OF TECHNOLOGY, KAMI-SHI, KOCH, JP

8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee