DE60036988D1 - Dünnfilmresonator und Verfahren zum Herstellen desselben - Google Patents
Dünnfilmresonator und Verfahren zum Herstellen desselbenInfo
- Publication number
- DE60036988D1 DE60036988D1 DE60036988T DE60036988T DE60036988D1 DE 60036988 D1 DE60036988 D1 DE 60036988D1 DE 60036988 T DE60036988 T DE 60036988T DE 60036988 T DE60036988 T DE 60036988T DE 60036988 D1 DE60036988 D1 DE 60036988D1
- Authority
- DE
- Germany
- Prior art keywords
- making
- same
- thin film
- film resonator
- resonator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000010409 thin film Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/174—Membranes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US363527 | 1999-07-29 | ||
US09/363,527 US6349454B1 (en) | 1999-07-29 | 1999-07-29 | Method of making thin film resonator apparatus |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60036988D1 true DE60036988D1 (de) | 2007-12-20 |
DE60036988T2 DE60036988T2 (de) | 2008-08-28 |
Family
ID=23430596
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60036988T Expired - Lifetime DE60036988T2 (de) | 1999-07-29 | 2000-07-17 | Dünnschichtresonator und Verfahren zur Herstellung desselben |
Country Status (9)
Country | Link |
---|---|
US (1) | US6349454B1 (de) |
EP (1) | EP1073198B1 (de) |
JP (1) | JP2001094373A (de) |
KR (1) | KR100438467B1 (de) |
CN (1) | CN1283895A (de) |
AU (1) | AU4884000A (de) |
BR (1) | BR0002976A (de) |
CA (1) | CA2314375C (de) |
DE (1) | DE60036988T2 (de) |
Families Citing this family (57)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6593193B2 (en) * | 2001-02-27 | 2003-07-15 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device and method for fabricating the same |
EP1419577A1 (de) * | 2001-08-14 | 2004-05-19 | Koninklijke Philips Electronics N.V. | Filteranordnung mit volumenwellen-resonator |
JP3954395B2 (ja) | 2001-10-26 | 2007-08-08 | 富士通株式会社 | 圧電薄膜共振子、フィルタ、および圧電薄膜共振子の製造方法 |
US6662419B2 (en) | 2001-12-17 | 2003-12-16 | Intel Corporation | Method for fabricating film bulk acoustic resonators to achieve high-Q and low loss |
US6816035B2 (en) * | 2002-08-08 | 2004-11-09 | Intel Corporation | Forming film bulk acoustic resonator filters |
US20040027030A1 (en) * | 2002-08-08 | 2004-02-12 | Li-Peng Wang | Manufacturing film bulk acoustic resonator filters |
WO2004015862A2 (en) * | 2002-08-13 | 2004-02-19 | Trikon Technologies Limited | Acoustic resonators |
US7152289B2 (en) | 2002-09-25 | 2006-12-26 | Intel Corporation | Method for forming bulk resonators silicon <110> substrate |
US6741147B2 (en) * | 2002-09-30 | 2004-05-25 | Agere Systems Inc. | Method and apparatus for adjusting the resonant frequency of a thin film resonator |
KR100483340B1 (ko) * | 2002-10-22 | 2005-04-15 | 쌍신전자통신주식회사 | 체적탄성파 소자 및 그 제조방법 |
JP3966237B2 (ja) * | 2003-06-19 | 2007-08-29 | セイコーエプソン株式会社 | 圧電デバイス、圧電デバイスを搭載した電子機器 |
US6904666B2 (en) * | 2003-07-31 | 2005-06-14 | Andrew Corporation | Method of manufacturing microwave filter components and microwave filter components formed thereby |
US7230367B2 (en) * | 2003-11-07 | 2007-06-12 | Matsushita Electric Industrial Co., Ltd. | Piezoelectric resonator, production method thereof, filter, duplexer, and communication device |
US7242130B2 (en) * | 2003-11-07 | 2007-07-10 | Matsushita Electric Industrial Co., Ltd. | Piezoelectric device, antenna duplexer, and method of manufacturing piezoelectric resonators used therefor |
US7113055B2 (en) * | 2003-11-07 | 2006-09-26 | Matsushita Electric Industrial Co., Ltd. | Piezoelectric resonator, method of manufacturing piezoelectric resonator, and filter, duplexer, and communication device using piezoelectric resonator |
US7323805B2 (en) | 2004-01-28 | 2008-01-29 | Kabushiki Kaisha Toshiba | Piezoelectric thin film device and method for manufacturing the same |
KR100622955B1 (ko) * | 2004-04-06 | 2006-09-18 | 삼성전자주식회사 | 박막 벌크 음향 공진기 및 그 제조방법 |
JP4077805B2 (ja) * | 2004-04-23 | 2008-04-23 | 松下電器産業株式会社 | 共振器の製造方法 |
JP4149416B2 (ja) * | 2004-05-31 | 2008-09-10 | 富士通メディアデバイス株式会社 | 圧電薄膜共振子およびフィルタならびにそれらの製造方法 |
US7446455B2 (en) * | 2004-12-07 | 2008-11-04 | Matsushita Electric Industrial Co., Ltd. | Thin film elastic wave resonator |
DE602006009384D1 (de) * | 2005-04-13 | 2009-11-05 | Murata Manufacturing Co | Piezoelektrisches dünnschichtfilter |
US20060274476A1 (en) * | 2005-04-13 | 2006-12-07 | Andrew Cervin-Lawry | Low loss thin film capacitor and methods of manufacturing the same |
US20070063777A1 (en) * | 2005-08-26 | 2007-03-22 | Mircea Capanu | Electrostrictive devices |
US7319284B2 (en) * | 2005-09-02 | 2008-01-15 | Precision Instrument Development Center National Applied Research Laboratories | Surface acoustic wave device and method for fabricating the same |
KR100780842B1 (ko) * | 2006-12-14 | 2007-11-30 | 주식회사 에스세라 | 공진 구조체를 가지는 압전 공진자의 형성방법들 |
US9369105B1 (en) * | 2007-08-31 | 2016-06-14 | Rf Micro Devices, Inc. | Method for manufacturing a vibrating MEMS circuit |
US9391588B2 (en) | 2007-08-31 | 2016-07-12 | Rf Micro Devices, Inc. | MEMS vibrating structure using an orientation dependent single-crystal piezoelectric thin film layer |
US9385685B2 (en) | 2007-08-31 | 2016-07-05 | Rf Micro Devices, Inc. | MEMS vibrating structure using an orientation dependent single-crystal piezoelectric thin film layer |
US8231795B2 (en) * | 2009-05-01 | 2012-07-31 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Micromachined horn |
US9466430B2 (en) | 2012-11-02 | 2016-10-11 | Qorvo Us, Inc. | Variable capacitor and switch structures in single crystal piezoelectric MEMS devices using bimorphs |
CN103281050A (zh) * | 2013-06-17 | 2013-09-04 | 天津大学 | 薄膜体声波滤波器 |
US9355972B2 (en) | 2014-03-04 | 2016-05-31 | International Business Machines Corporation | Method for making a dielectric region in a bulk silicon substrate providing a high-Q passive resonator |
US9991872B2 (en) | 2014-04-04 | 2018-06-05 | Qorvo Us, Inc. | MEMS resonator with functional layers |
US9998088B2 (en) | 2014-05-02 | 2018-06-12 | Qorvo Us, Inc. | Enhanced MEMS vibrating device |
US9537465B1 (en) * | 2014-06-06 | 2017-01-03 | Akoustis, Inc. | Acoustic resonator device with single crystal piezo material and capacitor on a bulk substrate |
US9571061B2 (en) * | 2014-06-06 | 2017-02-14 | Akoustis, Inc. | Integrated circuit configured with two or more single crystal acoustic resonator devices |
KR101598294B1 (ko) * | 2014-09-15 | 2016-02-26 | 삼성전기주식회사 | 음향 공진기 및 그 제조 방법 |
KR102117471B1 (ko) * | 2015-01-12 | 2020-06-01 | 삼성전기주식회사 | 음향 공진기 및 그 제조 방법 |
US10979023B2 (en) * | 2016-03-11 | 2021-04-13 | Akoustis, Inc. | 5.9 GHz c-V2X and DSRC acoustic wave resonator RF filter circuit |
US10979026B2 (en) * | 2016-03-11 | 2021-04-13 | Akoustis, Inc. | 5.5 GHz Wi-fi 5G coexistence acoustic wave resonator RF filter circuit |
US11418169B2 (en) * | 2016-03-11 | 2022-08-16 | Akoustis, Inc. | 5G n41 2.6 GHz band acoustic wave resonator RF filter circuit |
US10979024B2 (en) * | 2016-03-11 | 2021-04-13 | Akoustis, Inc. | 5.2 GHz Wi-Fi coexistence acoustic wave resonator RF filter circuit |
US11451213B2 (en) * | 2016-03-11 | 2022-09-20 | Akoustis, Inc. | 5G n79 Wi-Fi acoustic triplexer circuit |
US10979025B2 (en) * | 2016-03-11 | 2021-04-13 | Akoustis, Inc. | 5G band n79 acoustic wave resonator RF filter circuit |
US10979022B2 (en) * | 2016-03-11 | 2021-04-13 | Akoustis, Inc. | 5.2 GHz Wi-Fi acoustic wave resonator RF filter circuit |
US11316496B2 (en) * | 2016-03-11 | 2022-04-26 | Akoustis, Inc. | Method and structure for high performance resonance circuit with single crystal piezoelectric capacitor dielectric material |
US10985732B2 (en) * | 2016-03-11 | 2021-04-20 | Akoustis, Inc. | 5.6 GHz Wi-Fi acoustic wave resonator RF filter circuit |
US11476825B2 (en) * | 2016-03-11 | 2022-10-18 | Akoustis, Inc. | 5.5 GHz Wi-Fi coexistence acoustic wave resonator RF filter circuit |
CN107342357B (zh) * | 2016-04-28 | 2022-08-16 | 新科实业有限公司 | 薄膜压电元件及其制造方法 |
US10432172B2 (en) * | 2016-09-01 | 2019-10-01 | Samsung Electro-Mechanics Co., Ltd. | Bulk acoustic filter device and method of manufacturing the same |
US11171628B2 (en) * | 2017-07-04 | 2021-11-09 | Samsung Electro-Mechanics Co., Ltd. | Acoustic resonator and method for manufacturing the same |
JP7298991B2 (ja) * | 2018-01-22 | 2023-06-27 | 太陽誘電株式会社 | 圧電薄膜共振器、フィルタおよびマルチプレクサ |
CN108900173B (zh) * | 2018-07-04 | 2022-03-04 | 杭州左蓝微电子技术有限公司 | 一种以硅为牺牲层的薄膜体声波谐振器制备方法 |
CN110957989B (zh) * | 2018-09-26 | 2024-01-26 | 中国科学院苏州纳米技术与纳米仿生研究所 | 薄膜体声波谐振器及其制作方法 |
CN113541630A (zh) * | 2020-04-21 | 2021-10-22 | 济南晶正电子科技有限公司 | 一种复合单晶压电基板及其制备方法 |
CN111988010A (zh) * | 2020-08-24 | 2020-11-24 | 苏州奥谱毫通电子科技有限公司 | 一种晶体滤波元件及其制备方法 |
CN113300683B (zh) * | 2021-05-25 | 2023-03-10 | 中国科学院上海微系统与信息技术研究所 | 一种声表面波谐振器及其制备方法 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3422371A (en) | 1967-07-24 | 1969-01-14 | Sanders Associates Inc | Thin film piezoelectric oscillator |
US4320365A (en) | 1980-11-03 | 1982-03-16 | United Technologies Corporation | Fundamental, longitudinal, thickness mode bulk wave resonator |
JPS5859618A (ja) * | 1981-10-05 | 1983-04-08 | Nobuo Mikoshiba | 弾性表面波素子 |
JPS59141812A (ja) * | 1983-02-02 | 1984-08-14 | Nec Corp | 薄膜圧電振動子 |
JPS60145715A (ja) * | 1984-01-09 | 1985-08-01 | Nippon Telegr & Teleph Corp <Ntt> | 圧電共振子形成用基板の製造方法 |
JPS60210018A (ja) * | 1984-04-03 | 1985-10-22 | Nec Corp | 薄膜圧電振動子 |
US4719383A (en) * | 1985-05-20 | 1988-01-12 | The United States Of America As Represented By The United States Department Of Energy | Piezoelectric shear wave resonator and method of making same |
JPH07101832B2 (ja) * | 1986-06-23 | 1995-11-01 | 株式会社日立製作所 | 圧電変換器及びその製造方法 |
JPS6369280A (ja) * | 1986-09-10 | 1988-03-29 | Hitachi Ltd | 圧電素子及びその製造方法 |
JPH02248110A (ja) * | 1989-03-20 | 1990-10-03 | Sanyo Electric Co Ltd | 弾性表面波素子 |
US5747857A (en) * | 1991-03-13 | 1998-05-05 | Matsushita Electric Industrial Co., Ltd. | Electronic components having high-frequency elements and methods of manufacture therefor |
JPH07122960A (ja) * | 1993-10-22 | 1995-05-12 | Sanyo Electric Co Ltd | 弾性表面波素子 |
JPH07142954A (ja) * | 1993-11-15 | 1995-06-02 | Murata Mfg Co Ltd | 圧電薄膜複合共振子およびその製造方法 |
US5864261A (en) | 1994-05-23 | 1999-01-26 | Iowa State University Research Foundation | Multiple layer acoustical structures for thin-film resonator based circuits and systems |
US5821833A (en) | 1995-12-26 | 1998-10-13 | Tfr Technologies, Inc. | Stacked crystal filter device and method of making |
FR2746229B1 (fr) * | 1996-03-15 | 1998-05-22 | Dispositif electronique comprenant une base de temps integree | |
JPH09321361A (ja) * | 1996-05-27 | 1997-12-12 | Tdk Corp | 圧電振動部品及びその製造方法 |
-
1999
- 1999-07-29 US US09/363,527 patent/US6349454B1/en not_active Expired - Lifetime
-
2000
- 2000-07-17 DE DE60036988T patent/DE60036988T2/de not_active Expired - Lifetime
- 2000-07-17 EP EP00306072A patent/EP1073198B1/de not_active Expired - Lifetime
- 2000-07-19 BR BR0002976-9A patent/BR0002976A/pt not_active Application Discontinuation
- 2000-07-24 CA CA002314375A patent/CA2314375C/en not_active Expired - Fee Related
- 2000-07-26 CN CN00121944A patent/CN1283895A/zh active Pending
- 2000-07-26 AU AU48840/00A patent/AU4884000A/en not_active Abandoned
- 2000-07-27 JP JP2000226698A patent/JP2001094373A/ja active Pending
- 2000-07-28 KR KR10-2000-0043698A patent/KR100438467B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
KR100438467B1 (ko) | 2004-07-03 |
BR0002976A (pt) | 2001-03-13 |
DE60036988T2 (de) | 2008-08-28 |
CN1283895A (zh) | 2001-02-14 |
AU4884000A (en) | 2001-02-01 |
KR20010030029A (ko) | 2001-04-16 |
CA2314375A1 (en) | 2001-01-29 |
EP1073198A3 (de) | 2001-02-07 |
EP1073198B1 (de) | 2007-11-07 |
US6349454B1 (en) | 2002-02-26 |
CA2314375C (en) | 2003-11-18 |
EP1073198A2 (de) | 2001-01-31 |
JP2001094373A (ja) | 2001-04-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE60036988D1 (de) | Dünnfilmresonator und Verfahren zum Herstellen desselben | |
DE69829634D1 (de) | Entwicklungsrolle und Verfahren zum Herstellen derselben | |
DE60016209D1 (de) | Hemisynthetisches verfahren und dessen zwischenprudukte | |
DE59810418D1 (de) | Aufgeweiteter stent und verfahren zum herstellen desselben | |
DE69933907D1 (de) | Akustischer Resonator und Verfahren zur Herstellung desselben | |
DE60026034D1 (de) | Zusammendrückbeständiges mikriporöses material und verfahren zu seiner herstellung | |
DE10084745T1 (de) | Material mit variabler Verstreckung und Verfahren zu dessen Herstellung | |
DE69928795D1 (de) | Sitzgefüge und verfahren zum herstellen derselben | |
DE69941879D1 (de) | Feldeffekt-halbleiterbauelement und verfahren zu dessen herstellung | |
DE60002505D1 (de) | Lithium kobaltoxide und verfahren zur herstellung | |
DE60007039D1 (de) | Verfahren zum Herstellen von Schrauben | |
DE69942382D1 (de) | Sensor und verfahren zu dessen herstellung | |
DE50009221D1 (de) | Cholesterisches schichtmaterial und verfahren zu dessen herstellung | |
DE69923639D1 (de) | Augenlinsenmaterial und Verfahren zu dessen Herstellung | |
DE69901178D1 (de) | Nichtgesinterte elektrode und verfahren zur herstellung | |
DE69906405D1 (de) | Keramischer Heizkörper und Verfahren zum Herstellen desselben | |
NO20015542L (no) | Fremgangsmåte for fremstilling og anvendelse av N- desmetylzopikloner | |
DE50007947D1 (de) | Hohlgegossenes Bauteil und Verfahren zu dessen Herstellung | |
NO20012963L (no) | Fremgangsmåte for fremstilling av 3-alkanoylindoler og 3- alkylindoler | |
DE69909355D1 (de) | Verbundene Gegenstände und Verfahren zum Herstellen solcher verbundener Gegenstände | |
DE59914950D1 (de) | Feldeffektgesteuerter transistor und verfahren zu dessen herstellung | |
DE50004050D1 (de) | Elastische Walze und Verfahren zum Herstellen einer solchen | |
DE50008289D1 (de) | Elastische Walze und Verfahren zum Herstellen einer solchen | |
DE69834613D1 (de) | Halbleiterbauelement und verfahren zur dessen herstellung | |
DE69902105D1 (de) | Biozides material und verfahren zur dessen herstellung |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |