CN108900173B - 一种以硅为牺牲层的薄膜体声波谐振器制备方法 - Google Patents
一种以硅为牺牲层的薄膜体声波谐振器制备方法 Download PDFInfo
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- CN108900173B CN108900173B CN201810722065.5A CN201810722065A CN108900173B CN 108900173 B CN108900173 B CN 108900173B CN 201810722065 A CN201810722065 A CN 201810722065A CN 108900173 B CN108900173 B CN 108900173B
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- PSHMSSXLYVAENJ-UHFFFAOYSA-N dilithium;[oxido(oxoboranyloxy)boranyl]oxy-oxoboranyloxyborinate Chemical compound [Li+].[Li+].O=BOB([O-])OB([O-])OB=O PSHMSSXLYVAENJ-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
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- 238000001259 photo etching Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/173—Air-gaps
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
Description
Claims (10)
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CN201810722065.5A CN108900173B (zh) | 2018-07-04 | 2018-07-04 | 一种以硅为牺牲层的薄膜体声波谐振器制备方法 |
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CN201810722065.5A CN108900173B (zh) | 2018-07-04 | 2018-07-04 | 一种以硅为牺牲层的薄膜体声波谐振器制备方法 |
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CN108900173A CN108900173A (zh) | 2018-11-27 |
CN108900173B true CN108900173B (zh) | 2022-03-04 |
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Families Citing this family (6)
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CN111010109B (zh) * | 2019-03-02 | 2024-01-26 | 天津大学 | 释放孔位于封装空间外的mems器件的封装 |
CN110289824A (zh) * | 2019-05-22 | 2019-09-27 | 杭州左蓝微电子技术有限公司 | 薄膜体声波谐振器及其制备方法 |
CN110166013B (zh) * | 2019-06-20 | 2024-05-14 | 杭州左蓝微电子技术有限公司 | 一种声波器件及其制备方法、温度控制方法 |
CN110350885B (zh) * | 2019-08-06 | 2024-05-31 | 杭州左蓝微电子技术有限公司 | 一种滤波器及其制备方法 |
CN111262547B (zh) * | 2019-12-31 | 2021-08-10 | 诺思(天津)微系统有限责任公司 | 体声波谐振器、mems器件、滤波器和电子设备 |
CN114759897B (zh) * | 2022-04-11 | 2023-05-23 | 浙江星曜半导体有限公司 | 一种薄膜体声波谐振器及其制备方法 |
Citations (5)
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US6349454B1 (en) * | 1999-07-29 | 2002-02-26 | Agere Systems Guardian Corp. | Method of making thin film resonator apparatus |
CN1577809A (zh) * | 2003-07-01 | 2005-02-09 | 国际商业机器公司 | 绝缘体上SiGe衬底材料的制作方法及衬底材料 |
CN1894849A (zh) * | 2003-12-19 | 2007-01-10 | 宇部兴产株式会社 | 制造压电薄膜器件的方法和压电薄膜器件 |
CN106961258A (zh) * | 2017-05-04 | 2017-07-18 | 杭州左蓝微电子技术有限公司 | 一种空腔型声表面波谐振器及其加工方法 |
CN107026627A (zh) * | 2016-12-12 | 2017-08-08 | 佛山市艾佛光通科技有限公司 | 垂直阵列纳米柱薄膜体声波谐振器及其制备方法和滤波器 |
Family Cites Families (7)
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KR20030039446A (ko) * | 2001-11-13 | 2003-05-22 | 삼성전자주식회사 | Fbar 제조방법 |
KR100616508B1 (ko) * | 2002-04-11 | 2006-08-29 | 삼성전기주식회사 | Fbar 소자 및 그 제조방법 |
KR100646135B1 (ko) * | 2003-07-21 | 2006-11-23 | 쌍신전자통신주식회사 | 실리콘 체적탄성파 소자 및 그 제조방법 |
CN103342333B (zh) * | 2013-07-09 | 2015-12-09 | 江苏物联网研究发展中心 | 基于cmos dptm工艺的红外热电堆型传感器及其制作方法 |
US10355659B2 (en) * | 2016-03-11 | 2019-07-16 | Akoustis, Inc. | Piezoelectric acoustic resonator manufactured with piezoelectric thin film transfer process |
US10038422B2 (en) * | 2016-08-25 | 2018-07-31 | Qualcomm Incorporated | Single-chip multi-frequency film bulk acoustic-wave resonators |
US10637435B2 (en) * | 2016-12-22 | 2020-04-28 | Samsung Electro-Mechanics Co., Ltd. | Bulk acoustic wave resonator and filter including the same |
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2018
- 2018-07-04 CN CN201810722065.5A patent/CN108900173B/zh active Active
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US6349454B1 (en) * | 1999-07-29 | 2002-02-26 | Agere Systems Guardian Corp. | Method of making thin film resonator apparatus |
CN1577809A (zh) * | 2003-07-01 | 2005-02-09 | 国际商业机器公司 | 绝缘体上SiGe衬底材料的制作方法及衬底材料 |
CN1894849A (zh) * | 2003-12-19 | 2007-01-10 | 宇部兴产株式会社 | 制造压电薄膜器件的方法和压电薄膜器件 |
CN107026627A (zh) * | 2016-12-12 | 2017-08-08 | 佛山市艾佛光通科技有限公司 | 垂直阵列纳米柱薄膜体声波谐振器及其制备方法和滤波器 |
CN106961258A (zh) * | 2017-05-04 | 2017-07-18 | 杭州左蓝微电子技术有限公司 | 一种空腔型声表面波谐振器及其加工方法 |
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纳米薄膜及相应三维结构的构建、特性及应用;黄高山;《中国科学:技术科学》;20161231;第46卷(第2期);142-165 * |
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