DE60036305D1 - Selbstjustierte metalldeckschichten für zwischenschicht-metallverbindungen - Google Patents
Selbstjustierte metalldeckschichten für zwischenschicht-metallverbindungenInfo
- Publication number
- DE60036305D1 DE60036305D1 DE60036305T DE60036305T DE60036305D1 DE 60036305 D1 DE60036305 D1 DE 60036305D1 DE 60036305 T DE60036305 T DE 60036305T DE 60036305 T DE60036305 T DE 60036305T DE 60036305 D1 DE60036305 D1 DE 60036305D1
- Authority
- DE
- Germany
- Prior art keywords
- self
- intermediate layer
- metal
- adjusted
- coverings
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5226—Via connections in a multilevel interconnection structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US420402 | 1999-10-18 | ||
US09/420,402 US6261950B1 (en) | 1999-10-18 | 1999-10-18 | Self-aligned metal caps for interlevel metal connections |
PCT/US2000/027339 WO2001029892A1 (en) | 1999-10-18 | 2000-10-04 | Self-aligned metal caps for interlevel metal connections |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60036305D1 true DE60036305D1 (de) | 2007-10-18 |
DE60036305T2 DE60036305T2 (de) | 2008-05-15 |
Family
ID=23666322
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60036305T Expired - Lifetime DE60036305T2 (de) | 1999-10-18 | 2000-10-04 | Selbstjustierte metalldeckschichten für zwischenschicht-metallverbindungen |
Country Status (7)
Country | Link |
---|---|
US (1) | US6261950B1 (de) |
EP (1) | EP1230678B1 (de) |
JP (1) | JP2003527743A (de) |
KR (1) | KR100468069B1 (de) |
DE (1) | DE60036305T2 (de) |
TW (1) | TW465037B (de) |
WO (1) | WO2001029892A1 (de) |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4190118B2 (ja) * | 1999-12-17 | 2008-12-03 | 三菱電機株式会社 | 半導体装置、液晶表示装置および半導体装置の製造方法 |
US6613671B1 (en) * | 2000-03-03 | 2003-09-02 | Micron Technology, Inc. | Conductive connection forming methods, oxidation reducing methods, and integrated circuits formed thereby |
JP2001319928A (ja) * | 2000-05-08 | 2001-11-16 | Hitachi Ltd | 半導体集積回路装置およびその製造方法 |
US20050026412A1 (en) * | 2000-06-16 | 2005-02-03 | Drynan John M. | Interconnect line selectively isolated from an underlying contact plug |
US6406996B1 (en) * | 2000-09-30 | 2002-06-18 | Advanced Micro Devices, Inc. | Sub-cap and method of manufacture therefor in integrated circuit capping layers |
US9139906B2 (en) | 2001-03-06 | 2015-09-22 | Asm America, Inc. | Doping with ALD technology |
US7087997B2 (en) * | 2001-03-12 | 2006-08-08 | International Business Machines Corporation | Copper to aluminum interlayer interconnect using stud and via liner |
JP3874268B2 (ja) * | 2002-07-24 | 2007-01-31 | Tdk株式会社 | パターン化薄膜およびその形成方法 |
US7727892B2 (en) * | 2002-09-25 | 2010-06-01 | Intel Corporation | Method and apparatus for forming metal-metal oxide etch stop/barrier for integrated circuit interconnects |
US7045406B2 (en) | 2002-12-03 | 2006-05-16 | Asm International, N.V. | Method of forming an electrode with adjusted work function |
US7122414B2 (en) | 2002-12-03 | 2006-10-17 | Asm International, Inc. | Method to fabricate dual metal CMOS devices |
US6955984B2 (en) * | 2003-05-16 | 2005-10-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Surface treatment of metal interconnect lines |
JP2004349609A (ja) * | 2003-05-26 | 2004-12-09 | Renesas Technology Corp | 半導体装置およびその製造方法 |
JP2009524233A (ja) * | 2006-01-18 | 2009-06-25 | コニンクレイケ フィリップス エレクトロニクス ナームロゼ フェンノートシャップ | 金属線間で自己整合されたトレンチの集積化 |
KR101427142B1 (ko) | 2006-10-05 | 2014-08-07 | 에이에스엠 아메리카, 인코포레이티드 | 금속 규산염 막의 원자층 증착 |
WO2010016958A1 (en) * | 2008-08-07 | 2010-02-11 | International Business Machines Corporation | Interconnect structure with metal cap self-aligned to a surface of an embedded conductive material |
DE102008042107A1 (de) * | 2008-09-15 | 2010-03-18 | Robert Bosch Gmbh | Elektronisches Bauteil sowie Verfahren zu seiner Herstellung |
US8557702B2 (en) | 2009-02-02 | 2013-10-15 | Asm America, Inc. | Plasma-enhanced atomic layers deposition of conductive material over dielectric layers |
US10177031B2 (en) | 2014-12-23 | 2019-01-08 | International Business Machines Corporation | Subtractive etch interconnects |
US9431292B1 (en) | 2015-04-29 | 2016-08-30 | Globalfoundries Inc. | Alternate dual damascene method for forming interconnects |
US9722038B2 (en) | 2015-09-11 | 2017-08-01 | International Business Machines Corporation | Metal cap protection layer for gate and contact metallization |
US10727111B2 (en) * | 2017-07-18 | 2020-07-28 | Taiwan Semiconductor Manufaturing Co., Ltd. | Interconnect structure |
KR102396806B1 (ko) | 2017-08-31 | 2022-05-12 | 마이크론 테크놀로지, 인크 | 반도체 장치, 하이브리드 트랜지스터 및 관련 방법 |
JP7124059B2 (ja) * | 2017-08-31 | 2022-08-23 | マイクロン テクノロジー,インク. | 半導体デバイス、トランジスタ、および金属酸化物半導体デバイスを接触させるための関連する方法 |
US10985076B2 (en) | 2018-08-24 | 2021-04-20 | International Business Machines Corporation | Single metallization scheme for gate, source, and drain contact integration |
US11171051B1 (en) | 2020-05-06 | 2021-11-09 | International Business Machines Corporation | Contacts and liners having multi-segmented protective caps |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0319222A (ja) * | 1989-06-15 | 1991-01-28 | Matsushita Electron Corp | 半導体装置の製造方法 |
JP2921773B2 (ja) * | 1991-04-05 | 1999-07-19 | 三菱電機株式会社 | 半導体装置の配線接続構造およびその製造方法 |
US5305519A (en) * | 1991-10-24 | 1994-04-26 | Kawasaki Steel Corporation | Multilevel interconnect structure and method of manufacturing the same |
JPH0629399A (ja) * | 1992-07-09 | 1994-02-04 | Toshiba Corp | 半導体装置の製造方法 |
US5380546A (en) * | 1993-06-09 | 1995-01-10 | Microelectronics And Computer Technology Corporation | Multilevel metallization process for electronic components |
JP3219909B2 (ja) * | 1993-07-09 | 2001-10-15 | 株式会社東芝 | 半導体装置の製造方法 |
JPH07135188A (ja) * | 1993-11-11 | 1995-05-23 | Toshiba Corp | 半導体装置の製造方法 |
EP1098366A1 (de) * | 1994-12-29 | 2001-05-09 | STMicroelectronics, Inc. | Halbleiterverbindungsstruktur und Verfahren |
US5674787A (en) * | 1996-01-16 | 1997-10-07 | Sematech, Inc. | Selective electroless copper deposited interconnect plugs for ULSI applications |
US6066558A (en) * | 1996-03-05 | 2000-05-23 | Tokyo Electron Limited | Multilevel interconnection forming method for forming a semiconductor device |
JP3304754B2 (ja) * | 1996-04-11 | 2002-07-22 | 三菱電機株式会社 | 集積回路の多段埋め込み配線構造 |
JP3309717B2 (ja) * | 1996-06-26 | 2002-07-29 | 三菱電機株式会社 | 集積回路の配線の製造方法 |
JPH10135153A (ja) * | 1996-10-29 | 1998-05-22 | Hitachi Ltd | 半導体集積回路装置およびその製造方法 |
JPH10144685A (ja) * | 1996-11-13 | 1998-05-29 | Sony Corp | 半導体装置における配線構造及び配線形成方法 |
-
1999
- 1999-10-18 US US09/420,402 patent/US6261950B1/en not_active Expired - Lifetime
-
2000
- 2000-10-04 KR KR10-2002-7004891A patent/KR100468069B1/ko not_active IP Right Cessation
- 2000-10-04 DE DE60036305T patent/DE60036305T2/de not_active Expired - Lifetime
- 2000-10-04 JP JP2001531141A patent/JP2003527743A/ja active Pending
- 2000-10-04 WO PCT/US2000/027339 patent/WO2001029892A1/en active IP Right Grant
- 2000-10-04 EP EP00970566A patent/EP1230678B1/de not_active Expired - Lifetime
-
2001
- 2001-02-06 TW TW089121664A patent/TW465037B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP1230678B1 (de) | 2007-09-05 |
WO2001029892A1 (en) | 2001-04-26 |
KR20020047242A (ko) | 2002-06-21 |
JP2003527743A (ja) | 2003-09-16 |
TW465037B (en) | 2001-11-21 |
KR100468069B1 (ko) | 2005-01-25 |
EP1230678A1 (de) | 2002-08-14 |
US6261950B1 (en) | 2001-07-17 |
DE60036305T2 (de) | 2008-05-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8327 | Change in the person/name/address of the patent owner |
Owner name: INTERNATIONAL BUSINESS MACHINES CORP., ARMONK,, US Owner name: QIMONDA NORTH AMERICA CORP., CARY, N.C., US |
|
8364 | No opposition during term of opposition |