DE60032988D1 - Ladungsübertragungskanal mit einer in der Längsrichtung variierenden Kanalbreite und Bildaufnahmevorrichtung unter Verwendung desselben - Google Patents

Ladungsübertragungskanal mit einer in der Längsrichtung variierenden Kanalbreite und Bildaufnahmevorrichtung unter Verwendung desselben

Info

Publication number
DE60032988D1
DE60032988D1 DE60032988T DE60032988T DE60032988D1 DE 60032988 D1 DE60032988 D1 DE 60032988D1 DE 60032988 T DE60032988 T DE 60032988T DE 60032988 T DE60032988 T DE 60032988T DE 60032988 D1 DE60032988 D1 DE 60032988D1
Authority
DE
Germany
Prior art keywords
image pickup
same
pickup device
charge transfer
longitudinally varying
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60032988T
Other languages
English (en)
Other versions
DE60032988T2 (de
Inventor
Tetsuo Yamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
Original Assignee
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Photo Film Co Ltd filed Critical Fuji Photo Film Co Ltd
Publication of DE60032988D1 publication Critical patent/DE60032988D1/de
Application granted granted Critical
Publication of DE60032988T2 publication Critical patent/DE60032988T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14806—Structural or functional details thereof
    • H01L27/14812—Special geometry or disposition of pixel-elements, address lines or gate-electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14831—Area CCD imagers
DE60032988T 1999-10-07 2000-10-09 Ladungstransferpfad mit verbesserter ladungstransferleistung und festkörper-bild-aufnahmevorrichtung, die einen solchen ladungstransferpfad verwendet Expired - Lifetime DE60032988T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP28733599 1999-10-07
JP28733599A JP4199387B2 (ja) 1999-10-07 1999-10-07 電荷転送路およびそれを用いた固体撮像装置

Publications (2)

Publication Number Publication Date
DE60032988D1 true DE60032988D1 (de) 2007-03-08
DE60032988T2 DE60032988T2 (de) 2007-04-26

Family

ID=17716045

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60032988T Expired - Lifetime DE60032988T2 (de) 1999-10-07 2000-10-09 Ladungstransferpfad mit verbesserter ladungstransferleistung und festkörper-bild-aufnahmevorrichtung, die einen solchen ladungstransferpfad verwendet

Country Status (5)

Country Link
US (1) US6914633B1 (de)
EP (1) EP1091412B1 (de)
JP (1) JP4199387B2 (de)
KR (1) KR100553854B1 (de)
DE (1) DE60032988T2 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4338298B2 (ja) * 2000-10-04 2009-10-07 富士フイルム株式会社 電荷転送装置およびその駆動方法
JP3928840B2 (ja) 2001-02-01 2007-06-13 富士フイルム株式会社 固体撮像装置
US8120690B2 (en) 2001-04-12 2012-02-21 Nikon Corporation Imaging device
JP3871194B2 (ja) * 2001-08-02 2007-01-24 日本ビクター株式会社 撮像装置
JP4050906B2 (ja) * 2002-01-25 2008-02-20 富士フイルム株式会社 固体撮像装置
JP4049248B2 (ja) * 2002-07-10 2008-02-20 富士フイルム株式会社 固体撮像装置
JP2005093866A (ja) * 2003-09-19 2005-04-07 Fuji Film Microdevices Co Ltd 固体撮像素子の製造方法
JP4003734B2 (ja) * 2003-10-22 2007-11-07 セイコーエプソン株式会社 固体撮像装置及びその駆動方法
JP4214066B2 (ja) * 2004-03-01 2009-01-28 シャープ株式会社 固体撮像装置
BRPI0511772A (pt) * 2004-06-01 2008-01-08 Exxonmobil Upstream Res Co método para uso de uma abordagem de filtro de kalman para o processamento de dados eletromagnéticos
JP4739706B2 (ja) * 2004-07-23 2011-08-03 富士フイルム株式会社 固体撮像素子及びその製造方法
JP4666475B2 (ja) * 2004-08-13 2011-04-06 富士フイルム株式会社 固体撮像装置及び固体撮像装置の駆動方法
JP4579072B2 (ja) * 2005-07-13 2010-11-10 富士フイルム株式会社 固体撮像素子の駆動方法及び固体撮像装置
JP2007028080A (ja) * 2005-07-14 2007-02-01 Sony Corp 撮像装置
JP2007189022A (ja) * 2006-01-12 2007-07-26 Fujifilm Corp Ｃｃｄ型固体撮像素子及びその製造方法
JP2009060342A (ja) * 2007-08-31 2009-03-19 Fujifilm Corp 撮像装置及びｃｃｄ型固体撮像素子の駆動方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2597600B2 (ja) 1987-09-29 1997-04-09 株式会社東芝 固体撮像装置
KR930005226A (ko) * 1991-08-14 1993-03-23 문정환 Ccd 영상소자
US5274476A (en) * 1991-08-14 1993-12-28 Gold Star Electron Co., Ltd. CCD image sensor with photodiodes in a zig-zag pattern and particular transfer gate electrodes formed over channel stop regions and VCCD regions
JP2825702B2 (ja) * 1992-05-20 1998-11-18 シャープ株式会社 固体撮像素子
JPH0677450A (ja) 1992-06-25 1994-03-18 Sony Corp 固体撮像素子
JPH06252375A (ja) 1993-03-01 1994-09-09 Hitachi Ltd 固体撮像装置
KR950002410A (ko) 1993-06-30 1995-01-04 김광호 고체 촬상 장치

Also Published As

Publication number Publication date
EP1091412A3 (de) 2004-01-02
US6914633B1 (en) 2005-07-05
KR100553854B1 (ko) 2006-02-24
EP1091412B1 (de) 2007-01-17
KR20010067283A (ko) 2001-07-12
EP1091412A2 (de) 2001-04-11
JP4199387B2 (ja) 2008-12-17
JP2001111027A (ja) 2001-04-20
DE60032988T2 (de) 2007-04-26

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Legal Events

Date Code Title Description
8327 Change in the person/name/address of the patent owner

Owner name: FUJIFILM CORP., TOKIO/TOKYO, JP

8364 No opposition during term of opposition