DE50012452D1 - Projektionsobjektiv mit benachbart angeordneten asphärischen linsenoberflächen - Google Patents

Projektionsobjektiv mit benachbart angeordneten asphärischen linsenoberflächen

Info

Publication number
DE50012452D1
DE50012452D1 DE50012452T DE50012452T DE50012452D1 DE 50012452 D1 DE50012452 D1 DE 50012452D1 DE 50012452 T DE50012452 T DE 50012452T DE 50012452 T DE50012452 T DE 50012452T DE 50012452 D1 DE50012452 D1 DE 50012452D1
Authority
DE
Germany
Prior art keywords
lens
aspharic
adjustable
projection lens
projection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE50012452T
Other languages
German (de)
English (en)
Inventor
R Shafer
Karl-Heinz Schuster
Helmut Beierl
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Carl Zeiss SMT GmbH
Original Assignee
Carl Zeiss SMT GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE2000102626 external-priority patent/DE10002626A1/de
Application filed by Carl Zeiss SMT GmbH filed Critical Carl Zeiss SMT GmbH
Priority to DE50012452T priority Critical patent/DE50012452D1/de
Application granted granted Critical
Publication of DE50012452D1 publication Critical patent/DE50012452D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/08—Catadioptric systems
    • G02B17/0892—Catadioptric systems specially adapted for the UV
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B13/00—Optical objectives specially designed for the purposes specified below
    • G02B13/14—Optical objectives specially designed for the purposes specified below for use with infrared or ultraviolet radiation
    • G02B13/143—Optical objectives specially designed for the purposes specified below for use with infrared or ultraviolet radiation for use with ultraviolet radiation
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B13/00—Optical objectives specially designed for the purposes specified below
    • G02B13/18—Optical objectives specially designed for the purposes specified below with lenses having one or more non-spherical faces, e.g. for reducing geometrical aberration
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/08—Catadioptric systems
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G02B3/12—Fluid-filled or evacuated lenses
    • G02B3/14—Fluid-filled or evacuated lenses of variable focal length
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70225—Optical aspects of catadioptric systems, i.e. comprising reflective and refractive elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70241—Optical aspects of refractive lens systems, i.e. comprising only refractive elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70933—Purge, e.g. exchanging fluid or gas to remove pollutants
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
    • G03F7/70966—Birefringence

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Toxicology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Lenses (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
DE50012452T 1999-12-29 2000-12-22 Projektionsobjektiv mit benachbart angeordneten asphärischen linsenoberflächen Expired - Fee Related DE50012452D1 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE50012452T DE50012452D1 (de) 1999-12-29 2000-12-22 Projektionsobjektiv mit benachbart angeordneten asphärischen linsenoberflächen

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US17352399P 1999-12-29 1999-12-29
DE2000102626 DE10002626A1 (de) 2000-01-22 2000-01-22 Katadioptrisches Objektiv mit Asphären
DE10021739 2000-05-04
PCT/EP2000/013148 WO2001050171A1 (de) 1999-12-29 2000-12-22 Projektionsobjektiv mit benachbart angeordneten asphärischen linsenoberflächen
DE50012452T DE50012452D1 (de) 1999-12-29 2000-12-22 Projektionsobjektiv mit benachbart angeordneten asphärischen linsenoberflächen

Publications (1)

Publication Number Publication Date
DE50012452D1 true DE50012452D1 (de) 2006-05-11

Family

ID=27213593

Family Applications (1)

Application Number Title Priority Date Filing Date
DE50012452T Expired - Fee Related DE50012452D1 (de) 1999-12-29 2000-12-22 Projektionsobjektiv mit benachbart angeordneten asphärischen linsenoberflächen

Country Status (6)

Country Link
US (3) US6646718B2 (enExample)
EP (1) EP1242843B1 (enExample)
JP (1) JP2003535356A (enExample)
KR (1) KR100854052B1 (enExample)
DE (1) DE50012452D1 (enExample)
WO (1) WO2001050171A1 (enExample)

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JP2002244034A (ja) 2001-02-21 2002-08-28 Nikon Corp 投影光学系および該投影光学系を備えた露光装置
JP2002323652A (ja) 2001-02-23 2002-11-08 Nikon Corp 投影光学系，該投影光学系を備えた投影露光装置および投影露光方法
JP2004526331A (ja) 2001-05-15 2004-08-26 カール・ツアイス・エスエムテイ・アーゲー フッ化物結晶レンズを含む対物レンズ
DE10123725A1 (de) 2001-05-15 2002-11-21 Zeiss Carl Projektionsbelichtungsanlage der Mikrolithographie, Optisches System und Herstellverfahren
US7239447B2 (en) 2001-05-15 2007-07-03 Carl Zeiss Smt Ag Objective with crystal lenses
DE10151309A1 (de) * 2001-10-17 2003-05-08 Carl Zeiss Semiconductor Mfg S Projektionsbelichtungsanlage der Mikrolithographie für Lambda <200 nm
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US7190527B2 (en) 2002-03-01 2007-03-13 Carl Zeiss Smt Ag Refractive projection objective
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US20050094268A1 (en) * 2002-03-14 2005-05-05 Carl Zeiss Smt Ag Optical system with birefringent optical elements
US7292388B2 (en) 2002-05-08 2007-11-06 Carl Zeiss Smt Ag Lens made of a crystalline material
JP2005533285A (ja) * 2002-07-18 2005-11-04 カール・ツァイス・エスエムティー・アーゲー 反射屈折投影対物レンズ
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WO2004023172A1 (de) 2002-09-03 2004-03-18 Carl Zeiss Smt Ag Optimierverfahren für ein objektiv mit fluorid-kristall-linsen sowie objektiv mit fluorid-kristall-linsen
WO2004025349A1 (de) * 2002-09-09 2004-03-25 Carl Zeiss Smt Ag Katadioptrisches projektionsobjektiv sowie verfahren zur kompensation der intrinsischen doppelbrechung in einem solchen
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US7085075B2 (en) * 2003-08-12 2006-08-01 Carl Zeiss Smt Ag Projection objectives including a plurality of mirrors with lenses ahead of mirror M3
US7551361B2 (en) 2003-09-09 2009-06-23 Carl Zeiss Smt Ag Lithography lens system and projection exposure system provided with at least one lithography lens system of this type
US8208198B2 (en) 2004-01-14 2012-06-26 Carl Zeiss Smt Gmbh Catadioptric projection objective
US7177087B2 (en) * 2003-10-28 2007-02-13 Leupold & Stevens, Inc. Compound asperic ocular for riflescope
WO2005059654A1 (en) 2003-12-15 2005-06-30 Carl Zeiss Smt Ag Objective as a microlithography projection objective with at least one liquid lens
US20080151364A1 (en) 2004-01-14 2008-06-26 Carl Zeiss Smt Ag Catadioptric projection objective
CN100592210C (zh) 2004-02-13 2010-02-24 卡尔蔡司Smt股份公司 微平版印刷投影曝光装置的投影物镜
KR101213831B1 (ko) 2004-05-17 2012-12-24 칼 짜이스 에스엠티 게엠베하 중간이미지를 갖는 카타디옵트릭 투사 대물렌즈
US7511798B2 (en) 2004-07-30 2009-03-31 Asml Holding N.V. Off-axis catadioptric projection optical system for lithography
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US20080123074A1 (en) * 2004-11-10 2008-05-29 Nikon Corporation Projection Optical System, Exposure Equipment and Exposure Method
TWI454731B (zh) * 2005-05-27 2014-10-01 Zeiss Carl Smt Gmbh 用於改進投影物鏡的成像性質之方法以及該投影物鏡
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US7929115B2 (en) * 2007-06-01 2011-04-19 Carl Zeiss Smt Gmbh Projection objective and projection exposure apparatus for microlithography
KR101505256B1 (ko) * 2010-04-23 2015-03-30 칼 짜이스 에스엠티 게엠베하 리소그래픽 시스템의 광학 소자의 조작을 포함하는 리소그래픽 시스템의 작동 방법

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EP1094350A3 (en) * 1999-10-21 2001-08-16 Carl Zeiss Optical projection lens system
EP1242843B1 (de) * 1999-12-29 2006-03-22 Carl Zeiss SMT AG Projektionsobjektiv mit benachbart angeordneten asphärischen linsenoberflächen
US6542723B1 (en) * 2000-02-11 2003-04-01 Lucent Technologies Inc. Optoelectronic phase locked loop with balanced photodetection for clock recovery in high-speed optical time division multiplexed systems

Also Published As

Publication number Publication date
KR20020064364A (ko) 2002-08-07
US6646718B2 (en) 2003-11-11
EP1242843B1 (de) 2006-03-22
EP1242843A1 (de) 2002-09-25
US20050157400A1 (en) 2005-07-21
KR100854052B1 (ko) 2008-08-26
US20040233409A1 (en) 2004-11-25
US6903802B2 (en) 2005-06-07
WO2001050171A1 (de) 2001-07-12
US7154678B2 (en) 2006-12-26
JP2003535356A (ja) 2003-11-25
US20030179356A1 (en) 2003-09-25

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