DE4320089B4 - Verfahren zum Herstellen eines Kondensators einer Halbleiterspeicherzelle - Google Patents

Verfahren zum Herstellen eines Kondensators einer Halbleiterspeicherzelle Download PDF

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Publication number
DE4320089B4
DE4320089B4 DE4320089A DE4320089A DE4320089B4 DE 4320089 B4 DE4320089 B4 DE 4320089B4 DE 4320089 A DE4320089 A DE 4320089A DE 4320089 A DE4320089 A DE 4320089A DE 4320089 B4 DE4320089 B4 DE 4320089B4
Authority
DE
Germany
Prior art keywords
layer
capacitor
producing
electrode
silicon nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE4320089A
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German (de)
English (en)
Other versions
DE4320089A1 (de
Inventor
Jae-sung Guachun Roh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
Original Assignee
LG Semicon Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LG Semicon Co Ltd filed Critical LG Semicon Co Ltd
Publication of DE4320089A1 publication Critical patent/DE4320089A1/de
Application granted granted Critical
Publication of DE4320089B4 publication Critical patent/DE4320089B4/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69393—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing tantalum, e.g. Ta2O5

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Formation Of Insulating Films (AREA)
DE4320089A 1992-06-24 1993-06-17 Verfahren zum Herstellen eines Kondensators einer Halbleiterspeicherzelle Expired - Fee Related DE4320089B4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1019920011008A KR950012555B1 (ko) 1992-06-24 1992-06-24 메모리셀 캐패시터의 유전막 누설전류 개선방법
KR92-11008 1992-06-24

Publications (2)

Publication Number Publication Date
DE4320089A1 DE4320089A1 (de) 1994-01-05
DE4320089B4 true DE4320089B4 (de) 2007-05-03

Family

ID=19335176

Family Applications (1)

Application Number Title Priority Date Filing Date
DE4320089A Expired - Fee Related DE4320089B4 (de) 1992-06-24 1993-06-17 Verfahren zum Herstellen eines Kondensators einer Halbleiterspeicherzelle

Country Status (4)

Country Link
JP (1) JPH0689968A (enExample)
KR (1) KR950012555B1 (enExample)
DE (1) DE4320089B4 (enExample)
TW (1) TW230843B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6548854B1 (en) 1997-12-22 2003-04-15 Agere Systems Inc. Compound, high-K, gate and capacitor insulator layer
EP0851473A3 (en) * 1996-12-23 1998-07-22 Lucent Technologies Inc. Method of making a layer with high dielectric K, gate and capacitor insulator layer and device
KR19980060601A (ko) * 1996-12-31 1998-10-07 김영환 반도체 소자의 캐패시터 제조방법
JP4353665B2 (ja) * 2001-10-31 2009-10-28 三洋アクアテクノ株式会社 濾過装置
KR20040019512A (ko) 2002-08-28 2004-03-06 주식회사 하이닉스반도체 반도체 소자의 캐패시터 형성방법
US9868902B2 (en) 2014-07-17 2018-01-16 Soulbrain Co., Ltd. Composition for etching

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4891684A (en) * 1986-08-04 1990-01-02 Hitachi, Ltd. Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4891684A (en) * 1986-08-04 1990-01-02 Hitachi, Ltd. Semiconductor device

Non-Patent Citations (11)

* Cited by examiner, † Cited by third party
Title
E-1268 Sept. 24, 1992, Vol. 16, No. 459
ISOBE, Chiharu, SAITOH, Masaki: Effect of ozone annealing on the dielectric properties of tantalum oxide thin films grown by chemical vapor deposi- tion. In: Appl. Phys. Lett 56, (10) 5. March 1990, S. 907-909
ISOBE, Chiharu, SAITOH, Masaki: Effect of ozone annealing on the dielectric properties of tantalumoxide thin films grown by chemical vapor deposition. In: Appl. Phys. Lett 56, (10) 5. March 1990,S. 907-909 *
JP 04-162 527 A, In: Patent Abstracts of Japan
JP 04162527 A, In: Patent Abstracts of Japan *
LO, G.Q. et al.: Metal-oxide-semiconductor charac- teristics of chemical vapor deposited Ta2O5 films. In: Appl. Phys. Lett. 60, (26), 29. June 1992, S. 3286-3288
LO, G.Q. et al.: Metal-oxide-semiconductor characteristics of chemical vapor deposited Ta¶2¶O¶5¶ films. In: Appl. Phys. Lett. 60, (26), 29. June 1992, S. 3286-3288 *
SHINRIKI, Hiroshi et al.: Promising Storage Capacitor Structures with Thin Ta¶2¶O¶5¶ Film for Low-Power High-Density DRAM's. In: IEEE Transactions on Electron Devices, Vol. 37, No. 9, Sept. 1990, S. 1939-1947 *
SHINRIKI, Hiroshi et al.: Promising Storage Capacitor Structures with Thin Ta2O5 Film for Low-Power High-Density DRAM's. In: IEEE Trans- actions on Electron Devices, Vol. 37, No. 9, Sept. 1990, S. 1939-1947
SHINRIKI, Hiroshi, NAKATA, Masayuki: UV-O¶3¶ and Dry-O¶2¶: Two-Step Annealed Chemical Vapor-Depo- sited Ta¶2¶O¶5¶ Films for Storage Dielectrics of 64-Mb DRAM's. In: IEEE Transactions on Electron Devices, Vol. 38, No. 3, March 1991, S. 455-462 *
SHINRIKI, Hiroshi, NAKATA, Masayuki: UV-O3 and Dry-O2: Two-Step Annealed Chemical Vapor-Depo- sited Ta2O5 Films for Storage Dielectrics of 64-Mb DRAM's. In: IEEE Transactions on Electron Devices, Vol. 38, No. 3, March 1991, S. 455-462

Also Published As

Publication number Publication date
KR940001405A (ko) 1994-01-11
KR950012555B1 (ko) 1995-10-18
DE4320089A1 (de) 1994-01-05
JPH0689968A (ja) 1994-03-29
TW230843B (enExample) 1994-09-21

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Legal Events

Date Code Title Description
OR8 Request for search as to paragraph 43 lit. 1 sentence 1 patent law
8105 Search report available
8127 New person/name/address of the applicant

Owner name: LG SEMICON CO. LTD., CHUNGCHEONGBUK-DO, KR

8110 Request for examination paragraph 44
8364 No opposition during term of opposition
R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee

Effective date: 20130101