DE4234153A1 - Schaltkreis zur erhoehung der arbeitsgeschwindigkeit einer halbleiter-speichervorrichtung - Google Patents

Schaltkreis zur erhoehung der arbeitsgeschwindigkeit einer halbleiter-speichervorrichtung

Info

Publication number
DE4234153A1
DE4234153A1 DE4234153A DE4234153A DE4234153A1 DE 4234153 A1 DE4234153 A1 DE 4234153A1 DE 4234153 A DE4234153 A DE 4234153A DE 4234153 A DE4234153 A DE 4234153A DE 4234153 A1 DE4234153 A1 DE 4234153A1
Authority
DE
Germany
Prior art keywords
signal
input
control
bit lines
input signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE4234153A
Other languages
German (de)
English (en)
Inventor
Hyong-Gon Lee
Cheol-Ung Jang
Sung-Hee Cho
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of DE4234153A1 publication Critical patent/DE4234153A1/de
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1048—Data bus control circuits, e.g. precharging, presetting, equalising
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/18—Address timing or clocking circuits; Address control signal generation or management, e.g. for row address strobe [RAS] or column address strobe [CAS] signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Dram (AREA)
DE4234153A 1991-11-19 1992-10-09 Schaltkreis zur erhoehung der arbeitsgeschwindigkeit einer halbleiter-speichervorrichtung Ceased DE4234153A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910020595A KR930010990A (ko) 1991-11-19 1991-11-19 반도체 메모리 장치에서의 스피드 향상을 위한 회로

Publications (1)

Publication Number Publication Date
DE4234153A1 true DE4234153A1 (de) 1993-05-27

Family

ID=19323071

Family Applications (1)

Application Number Title Priority Date Filing Date
DE4234153A Ceased DE4234153A1 (de) 1991-11-19 1992-10-09 Schaltkreis zur erhoehung der arbeitsgeschwindigkeit einer halbleiter-speichervorrichtung

Country Status (8)

Country Link
JP (1) JPH05217378A (enrdf_load_stackoverflow)
KR (1) KR930010990A (enrdf_load_stackoverflow)
CN (1) CN1072528A (enrdf_load_stackoverflow)
DE (1) DE4234153A1 (enrdf_load_stackoverflow)
FR (1) FR2683934A1 (enrdf_load_stackoverflow)
GB (1) GB2261754A (enrdf_load_stackoverflow)
IT (1) IT1258253B (enrdf_load_stackoverflow)
TW (1) TW198157B (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0581465A3 (en) * 1992-07-27 1995-04-12 Samsung Electronics Co Ltd Address transition detection.

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8688955B2 (en) 2010-08-13 2014-04-01 Micron Technology, Inc. Line termination methods and apparatus
CN102723100A (zh) * 2012-05-23 2012-10-10 常州芯奇微电子科技有限公司 多功能内存接口电路

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6224875A (ja) * 1985-07-24 1987-02-02 Sekisui Chem Co Ltd 溶接装置
JPH0640439B2 (ja) * 1986-02-17 1994-05-25 日本電気株式会社 半導体記憶装置
JPH07107797B2 (ja) * 1987-02-10 1995-11-15 三菱電機株式会社 ダイナミツクランダムアクセスメモリ
KR910003605B1 (ko) * 1988-04-30 1991-06-07 삼성전자 주식회사 Sram 센스앰프의 등화회로
JPH0814989B2 (ja) * 1989-05-09 1996-02-14 日本電気株式会社 内部同期型スタティックｒａｍ
US4969125A (en) * 1989-06-23 1990-11-06 International Business Machines Corporation Asynchronous segmented precharge architecture
EP0419852A3 (en) * 1989-09-22 1992-08-05 Texas Instruments Incorporated A memory with selective address transition detection for cache operation

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0581465A3 (en) * 1992-07-27 1995-04-12 Samsung Electronics Co Ltd Address transition detection.

Also Published As

Publication number Publication date
IT1258253B (it) 1996-02-22
ITMI922575A0 (it) 1992-11-10
CN1072528A (zh) 1993-05-26
GB2261754A (en) 1993-05-26
KR930010990A (ko) 1993-06-23
ITMI922575A1 (it) 1994-05-10
TW198157B (enrdf_load_stackoverflow) 1993-01-11
GB9224303D0 (en) 1993-01-06
JPH05217378A (ja) 1993-08-27
FR2683934A1 (fr) 1993-05-21

Similar Documents

Publication Publication Date Title
DE69630858T2 (de) Vorladungsschaltung für eine Halbleiterspeicheranordnung
DE102007005701B4 (de) Speichersteuerschaltung und -verfahren
DE10216607B4 (de) Halbleiterspeichervorrichtung
DE4126474C2 (enrdf_load_stackoverflow)
DE19507574C2 (de) Synchrone Halbleiterspeichervorrichtung mit Selbstvorladefunktion
DE19753495C2 (de) Halbleiterspeichereinrichtung mit einer Mehrzahl von internen Versorgungsschaltungen
DE69619620T2 (de) Synchroner Halbleiterspeicher mit einem systemzyklusabhängigen Schreibausführungszyklus
DE3687302T2 (de) Chipauswahlbeschleunigungsschaltung fuer einen speicher.
DE10065477B4 (de) Automatisches Vorladegerät einer Halbleiter-Speicheranordnung
DE4129875A1 (de) Dynamische direktzugriffsspeichereinrichtung mit einem testmodusbetrieb und betriebsverfahren hierfuer
DE4034167C2 (enrdf_load_stackoverflow)
DE4003673A1 (de) Erweiterte schnellschreibschaltung fuer den dram-test
DE10042388A1 (de) Nichtflüchtiger ferroelektrischer Speicher
DE68920233T2 (de) Steuerschaltung für eine Halbleiterspeicheranordnung und Halbleiterspeichersystem.
DE19636743A1 (de) Halbleiterspeichervorrichtung mit Datenausgabewegen für schnellen Zugang
DE4018296A1 (de) Elektrische schaltung fuer einen parallelschreibtest eines breiten mehrfachbytes in einer halbleiterspeichereinrichtung
DE10234123A1 (de) Halbleiterspeichervorrichtung mit Leseverstärker
DE69936277T2 (de) Synchron-Halbleiterspeichervorrichtung
DE4205578A1 (de) Halbleiterspeichereinrichtung mit adressuebergangsdetektor
DE10029887A1 (de) Synchrone Halbleiterspeichervorrichtung
DE19908157A1 (de) Speichertestschaltung
DE10161128A1 (de) Mit einem Taktsignal synchron arbeitende Halbleiterspeichervorrichtung
DE19531021C2 (de) Datenleseschaltung
DE19758068A1 (de) Schaltung zum Treiben/Steuern eines Erfassungsverstärkers
DE4124421C2 (de) Halbleiterspeichervorrichtung mit einem sehr schnellen Schreibvorgang

Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
8131 Rejection