JPH05217378A - 半導体メモリ装置 - Google Patents

半導体メモリ装置

Info

Publication number
JPH05217378A
JPH05217378A JP4308424A JP30842492A JPH05217378A JP H05217378 A JPH05217378 A JP H05217378A JP 4308424 A JP4308424 A JP 4308424A JP 30842492 A JP30842492 A JP 30842492A JP H05217378 A JPH05217378 A JP H05217378A
Authority
JP
Japan
Prior art keywords
signal
line pair
input
control signal
equalization
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4308424A
Other languages
English (en)
Japanese (ja)
Inventor
Hyong-Gon Lee
炯坤 李
Cheol-Ung Jang
▲ちょる▼雄 張
Sung-Hee Cho
星煕 趙
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of JPH05217378A publication Critical patent/JPH05217378A/ja
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1048Data bus control circuits, e.g. precharging, presetting, equalising
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C8/00Arrangements for selecting an address in a digital store
    • G11C8/18Address timing or clocking circuits; Address control signal generation or management, e.g. for row address strobe [RAS] or column address strobe [CAS] signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Dram (AREA)
JP4308424A 1991-11-19 1992-11-18 半導体メモリ装置 Pending JPH05217378A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1019910020595A KR930010990A (ko) 1991-11-19 1991-11-19 반도체 메모리 장치에서의 스피드 향상을 위한 회로
KR1991P20595 1991-11-19

Publications (1)

Publication Number Publication Date
JPH05217378A true JPH05217378A (ja) 1993-08-27

Family

ID=19323071

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4308424A Pending JPH05217378A (ja) 1991-11-19 1992-11-18 半導体メモリ装置

Country Status (8)

Country Link
JP (1) JPH05217378A (enrdf_load_stackoverflow)
KR (1) KR930010990A (enrdf_load_stackoverflow)
CN (1) CN1072528A (enrdf_load_stackoverflow)
DE (1) DE4234153A1 (enrdf_load_stackoverflow)
FR (1) FR2683934A1 (enrdf_load_stackoverflow)
GB (1) GB2261754A (enrdf_load_stackoverflow)
IT (1) IT1258253B (enrdf_load_stackoverflow)
TW (1) TW198157B (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR940002860A (ko) * 1992-07-27 1994-02-19 김광호 어드레스 변동 검출기
US8688955B2 (en) 2010-08-13 2014-04-01 Micron Technology, Inc. Line termination methods and apparatus
CN102723100A (zh) * 2012-05-23 2012-10-10 常州芯奇微电子科技有限公司 多功能内存接口电路

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6224875A (ja) * 1985-07-24 1987-02-02 Sekisui Chem Co Ltd 溶接装置
JPS62189694A (ja) * 1986-02-17 1987-08-19 Nec Corp 半導体記憶装置
JPH0334189A (ja) * 1989-06-23 1991-02-14 Internatl Business Mach Corp <Ibm> メモリ

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07107797B2 (ja) * 1987-02-10 1995-11-15 三菱電機株式会社 ダイナミツクランダムアクセスメモリ
KR910003605B1 (ko) * 1988-04-30 1991-06-07 삼성전자 주식회사 Sram 센스앰프의 등화회로
JPH0814989B2 (ja) * 1989-05-09 1996-02-14 日本電気株式会社 内部同期型スタティックram
EP0419852A3 (en) * 1989-09-22 1992-08-05 Texas Instruments Incorporated A memory with selective address transition detection for cache operation

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6224875A (ja) * 1985-07-24 1987-02-02 Sekisui Chem Co Ltd 溶接装置
JPS62189694A (ja) * 1986-02-17 1987-08-19 Nec Corp 半導体記憶装置
JPH0334189A (ja) * 1989-06-23 1991-02-14 Internatl Business Mach Corp <Ibm> メモリ

Also Published As

Publication number Publication date
IT1258253B (it) 1996-02-22
ITMI922575A0 (it) 1992-11-10
CN1072528A (zh) 1993-05-26
GB2261754A (en) 1993-05-26
KR930010990A (ko) 1993-06-23
ITMI922575A1 (it) 1994-05-10
TW198157B (enrdf_load_stackoverflow) 1993-01-11
GB9224303D0 (en) 1993-01-06
DE4234153A1 (de) 1993-05-27
FR2683934A1 (fr) 1993-05-21

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