DE3942931C2 - - Google Patents
Info
- Publication number
- DE3942931C2 DE3942931C2 DE3942931A DE3942931A DE3942931C2 DE 3942931 C2 DE3942931 C2 DE 3942931C2 DE 3942931 A DE3942931 A DE 3942931A DE 3942931 A DE3942931 A DE 3942931A DE 3942931 C2 DE3942931 C2 DE 3942931C2
- Authority
- DE
- Germany
- Prior art keywords
- wafers
- transducer
- roughness
- surface area
- mating surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 235000012431 wafers Nutrition 0.000 claims description 46
- 230000013011 mating Effects 0.000 claims description 23
- 230000003746 surface roughness Effects 0.000 claims description 9
- 238000010306 acid treatment Methods 0.000 claims description 2
- 239000011247 coating layer Substances 0.000 claims description 2
- 238000004381 surface treatment Methods 0.000 claims 1
- 230000003647 oxidation Effects 0.000 description 9
- 238000007254 oxidation reaction Methods 0.000 description 9
- 238000005229 chemical vapour deposition Methods 0.000 description 8
- 230000006378 damage Effects 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 7
- 239000010410 layer Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- UKCBKQLNTLMFAA-UHFFFAOYSA-N F.[F] Chemical compound F.[F] UKCBKQLNTLMFAA-UHFFFAOYSA-N 0.000 description 1
- 241001491807 Idaea straminata Species 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000006735 deficit Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
- C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Manufacturing & Machinery (AREA)
- General Chemical & Material Sciences (AREA)
- Structural Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63326236A JPH02174116A (ja) | 1988-12-26 | 1988-12-26 | サセプタ |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3942931A1 DE3942931A1 (de) | 1990-06-28 |
DE3942931C2 true DE3942931C2 (en)van) | 1993-07-15 |
Family
ID=18185510
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE3942931A Granted DE3942931A1 (de) | 1988-12-26 | 1989-12-23 | Aufnehmer |
Country Status (4)
Country | Link |
---|---|
JP (1) | JPH02174116A (en)van) |
DE (1) | DE3942931A1 (en)van) |
FR (1) | FR2640964B1 (en)van) |
IT (1) | IT1236887B (en)van) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19547601A1 (de) * | 1995-12-20 | 1997-06-26 | Sel Alcatel Ag | Vorrichtung zum Sintern von porösen Schichten |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0492447A (ja) * | 1990-08-08 | 1992-03-25 | Shin Etsu Chem Co Ltd | 無機薄膜の成膜方法 |
DE4026244C2 (de) * | 1990-08-18 | 1996-02-08 | Ant Nachrichtentech | Substratträger |
DE4222512C2 (de) * | 1992-07-09 | 1994-06-16 | Ant Nachrichtentech | Verfahren zum Halten eines Halbleitersubstrats während der Bauelementeherstellung |
US5580388A (en) * | 1993-01-21 | 1996-12-03 | Moore Epitaxial, Inc. | Multi-layer susceptor for rapid thermal process reactors |
NL9300389A (nl) * | 1993-03-04 | 1994-10-03 | Xycarb Bv | Substraatdrager. |
US5645646A (en) * | 1994-02-25 | 1997-07-08 | Applied Materials, Inc. | Susceptor for deposition apparatus |
US5700725A (en) * | 1995-06-26 | 1997-12-23 | Lucent Technologies Inc. | Apparatus and method for making integrated circuits |
US5584936A (en) * | 1995-12-14 | 1996-12-17 | Cvd, Incorporated | Susceptor for semiconductor wafer processing |
US6395363B1 (en) * | 1996-11-05 | 2002-05-28 | Applied Materials, Inc. | Sloped substrate support |
JP3887052B2 (ja) * | 1996-12-13 | 2007-02-28 | 東洋炭素株式会社 | 気相成長用サセプター |
US6368410B1 (en) | 1999-06-28 | 2002-04-09 | General Electric Company | Semiconductor processing article |
US6717116B1 (en) | 1999-08-10 | 2004-04-06 | Ibiden Co., Ltd. | Semiconductor production device ceramic plate |
EP1396879B1 (en) | 2001-05-31 | 2008-02-20 | Shin-Etsu Handotai Co., Ltd | Method of fabricating semiconductor wafer |
JP2002373930A (ja) * | 2001-06-14 | 2002-12-26 | Hitachi Chem Co Ltd | サセプタ− |
JP4688363B2 (ja) * | 2001-07-31 | 2011-05-25 | 京セラ株式会社 | ウエハ加熱装置 |
DE10334940B4 (de) * | 2003-07-31 | 2007-08-23 | Infineon Technologies Ag | Trägereinrichtung |
WO2009020024A1 (ja) | 2007-08-03 | 2009-02-12 | Shin-Etsu Handotai Co., Ltd. | サセプタ及びシリコンエピタキシャルウェーハの製造方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE8008012U1 (de) * | 1980-09-11 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Halterung für Halbleiterscheiben | |
US3747282A (en) * | 1971-11-29 | 1973-07-24 | E Katzke | Apparatus for polishing wafers |
JPS54152465A (en) * | 1978-05-22 | 1979-11-30 | Nec Corp | Manufacture of epitaxial wafer |
US4692836A (en) * | 1983-10-31 | 1987-09-08 | Toshiba Kikai Kabushiki Kaisha | Electrostatic chucks |
JPS6099538A (ja) * | 1983-11-01 | 1985-06-03 | 横河・ヒュ−レット・パッカ−ド株式会社 | ピンチヤツク |
JPS61242994A (ja) * | 1985-04-22 | 1986-10-29 | Toshiba Corp | 縦型気相成長装置 |
JP2671914B2 (ja) * | 1986-01-30 | 1997-11-05 | 東芝セラミックス 株式会社 | サセプタ |
US4761134B1 (en) * | 1987-03-30 | 1993-11-16 | Silicon carbide diffusion furnace components with an impervious coating thereon | |
JPS6447019A (en) * | 1987-08-18 | 1989-02-21 | Denki Kagaku Kogyo Kk | Glassy carbon coated susceptor |
-
1988
- 1988-12-26 JP JP63326236A patent/JPH02174116A/ja active Pending
-
1989
- 1989-12-19 IT IT02273389A patent/IT1236887B/it active IP Right Grant
- 1989-12-21 FR FR8916966A patent/FR2640964B1/fr not_active Expired - Fee Related
- 1989-12-23 DE DE3942931A patent/DE3942931A1/de active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19547601A1 (de) * | 1995-12-20 | 1997-06-26 | Sel Alcatel Ag | Vorrichtung zum Sintern von porösen Schichten |
Also Published As
Publication number | Publication date |
---|---|
DE3942931A1 (de) | 1990-06-28 |
IT1236887B (it) | 1993-04-26 |
IT8922733A0 (it) | 1989-12-19 |
IT8922733A1 (it) | 1991-06-19 |
FR2640964B1 (en)van) | 1993-06-11 |
JPH02174116A (ja) | 1990-07-05 |
FR2640964A1 (en)van) | 1990-06-29 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8110 | Request for examination paragraph 44 | ||
D2 | Grant after examination | ||
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |