DE3856227T2 - Polysilicium-dünnfilm-verfahren - Google Patents
Polysilicium-dünnfilm-verfahrenInfo
- Publication number
- DE3856227T2 DE3856227T2 DE3856227T DE3856227T DE3856227T2 DE 3856227 T2 DE3856227 T2 DE 3856227T2 DE 3856227 T DE3856227 T DE 3856227T DE 3856227 T DE3856227 T DE 3856227T DE 3856227 T2 DE3856227 T2 DE 3856227T2
- Authority
- DE
- Germany
- Prior art keywords
- annealing
- film
- substrate
- diaphragms
- strain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010409 thin film Substances 0.000 title 1
- 238000000137 annealing Methods 0.000 abstract 6
- 239000000758 substrate Substances 0.000 abstract 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 4
- 229920005591 polysilicon Polymers 0.000 abstract 3
- 239000013078 crystal Substances 0.000 abstract 2
- 238000012935 Averaging Methods 0.000 abstract 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract 1
- 239000000356 contaminant Substances 0.000 abstract 1
- 238000000354 decomposition reaction Methods 0.000 abstract 1
- 230000007423 decrease Effects 0.000 abstract 1
- 230000007547 defect Effects 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 abstract 1
- 229910000077 silane Inorganic materials 0.000 abstract 1
- 230000003746 surface roughness Effects 0.000 abstract 1
- 238000000108 ultra-filtration Methods 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/025—Deposition multi-step
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/097—Lattice strain and defects
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/122—Polycrystalline
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/977—Thinning or removal of substrate
Landscapes
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Analytical Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Silicon Polymers (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/131,082 US4897360A (en) | 1987-12-09 | 1987-12-09 | Polysilicon thin film process |
PCT/US1988/004334 WO1989006045A1 (en) | 1987-12-09 | 1988-12-05 | Polysilicon thin film process and product |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3856227D1 DE3856227D1 (de) | 1998-09-03 |
DE3856227T2 true DE3856227T2 (de) | 1999-04-22 |
Family
ID=22447790
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE3856227T Expired - Lifetime DE3856227T2 (de) | 1987-12-09 | 1988-12-05 | Polysilicium-dünnfilm-verfahren |
Country Status (7)
Country | Link |
---|---|
US (1) | US4897360A (de) |
EP (1) | EP0349633B1 (de) |
JP (1) | JPH0788579B2 (de) |
AT (1) | ATE169149T1 (de) |
CA (1) | CA1315648C (de) |
DE (1) | DE3856227T2 (de) |
WO (1) | WO1989006045A1 (de) |
Families Citing this family (107)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5962869A (en) * | 1988-09-28 | 1999-10-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor material and method for forming the same and thin film transistor |
US5753542A (en) * | 1985-08-02 | 1998-05-19 | Semiconductor Energy Laboratory Co., Ltd. | Method for crystallizing semiconductor material without exposing it to air |
US5234781A (en) * | 1988-11-07 | 1993-08-10 | Fujitsu Limited | Mask for lithographic patterning and a method of manufacturing the same |
JP2725319B2 (ja) * | 1988-11-07 | 1998-03-11 | 富士通株式会社 | 荷電粒子線マスクの製造方法 |
US5051326A (en) * | 1989-05-26 | 1991-09-24 | At&T Bell Laboratories | X-Ray lithography mask and devices made therewith |
FR2656738B1 (fr) * | 1989-12-29 | 1995-03-17 | Telemecanique | Procede pour fabriquer un dispositif semiconducteur, dispositif et composant semiconducteur obtenus par le procede. |
US5024972A (en) * | 1990-01-29 | 1991-06-18 | Motorola, Inc. | Deposition of a conductive layer for contacts |
ATE132919T1 (de) * | 1990-04-10 | 1996-01-15 | Canon Kk | Verfahren zur herstellung einer halbleiterdünnschicht |
US5188983A (en) * | 1990-04-11 | 1993-02-23 | Wisconsin Alumni Research Foundation | Polysilicon resonating beam transducers and method of producing the same |
US5090254A (en) * | 1990-04-11 | 1992-02-25 | Wisconsin Alumni Research Foundation | Polysilicon resonating beam transducers |
US5059543A (en) * | 1990-09-21 | 1991-10-22 | The Board Of Regents Acting For And On Behalf Of The University Of Michigan | Method of manufacturing thermopile infrared detector |
US5210050A (en) * | 1990-10-15 | 1993-05-11 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a semiconductor device comprising a semiconductor film |
KR950013784B1 (ko) | 1990-11-20 | 1995-11-16 | 가부시키가이샤 한도오따이 에네루기 겐큐쇼 | 반도체 전계효과 트랜지스터 및 그 제조방법과 박막트랜지스터 |
US5849601A (en) * | 1990-12-25 | 1998-12-15 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method for manufacturing the same |
US7115902B1 (en) | 1990-11-20 | 2006-10-03 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method for manufacturing the same |
KR950001360B1 (ko) * | 1990-11-26 | 1995-02-17 | 가부시키가이샤 한도오따이 에네루기 겐큐쇼 | 전기 광학장치와 그 구동방법 |
US8106867B2 (en) | 1990-11-26 | 2012-01-31 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and driving method for the same |
US7154147B1 (en) | 1990-11-26 | 2006-12-26 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and driving method for the same |
KR930009549B1 (ko) * | 1990-11-28 | 1993-10-06 | 현대전자산업 주식회사 | 고저항용 다결정 실리콘의 저항치 유지방법 |
US5189777A (en) * | 1990-12-07 | 1993-03-02 | Wisconsin Alumni Research Foundation | Method of producing micromachined differential pressure transducers |
US7576360B2 (en) * | 1990-12-25 | 2009-08-18 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device which comprises thin film transistors and method for manufacturing the same |
US7098479B1 (en) | 1990-12-25 | 2006-08-29 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method for manufacturing the same |
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EP0499979A3 (en) | 1991-02-16 | 1993-06-09 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device |
JP2794499B2 (ja) | 1991-03-26 | 1998-09-03 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US5695819A (en) * | 1991-08-09 | 1997-12-09 | Applied Materials, Inc. | Method of enhancing step coverage of polysilicon deposits |
JP2845303B2 (ja) | 1991-08-23 | 1999-01-13 | 株式会社 半導体エネルギー研究所 | 半導体装置とその作製方法 |
US6013565A (en) | 1991-12-16 | 2000-01-11 | Penn State Research Foundation | High conductivity thin film material for semiconductor device |
JPH05190872A (ja) * | 1992-01-16 | 1993-07-30 | Oki Electric Ind Co Ltd | 半導体圧力センサおよびその製造方法 |
US5527161A (en) * | 1992-02-13 | 1996-06-18 | Cybor Corporation | Filtering and dispensing system |
US5401983A (en) * | 1992-04-08 | 1995-03-28 | Georgia Tech Research Corporation | Processes for lift-off of thin film materials or devices for fabricating three dimensional integrated circuits, optical detectors, and micromechanical devices |
US5244818A (en) * | 1992-04-08 | 1993-09-14 | Georgia Tech Research Corporation | Processes for lift-off of thin film materials and for the fabrication of three dimensional integrated circuits |
JP2814161B2 (ja) | 1992-04-28 | 1998-10-22 | 株式会社半導体エネルギー研究所 | アクティブマトリクス表示装置およびその駆動方法 |
US6693681B1 (en) | 1992-04-28 | 2004-02-17 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method of driving the same |
US5466641A (en) * | 1992-06-15 | 1995-11-14 | Kawasaki Steel Corporation | Process for forming polycrystalline silicon film |
KR950010859B1 (ko) * | 1992-09-29 | 1995-09-25 | 현대전자산업주식회사 | 박막 트랜지스터의 채널폴리 제조방법 |
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JP6100200B2 (ja) | 2014-04-24 | 2017-03-22 | 信越半導体株式会社 | 貼り合わせsoiウェーハの製造方法 |
EP3208366A1 (de) | 2016-02-16 | 2017-08-23 | Siltronic AG | Fz-silicium und verfahren zur herstellung von fz-silicium |
CN108281353B (zh) * | 2018-01-15 | 2019-04-23 | 西安交通大学 | 一种扫描式高能微束x射线制备应变硅的方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
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US3721584A (en) * | 1970-04-13 | 1973-03-20 | A Diem | Silicon coated substrates and objects fabricated therefrom |
US3900597A (en) * | 1973-12-19 | 1975-08-19 | Motorola Inc | System and process for deposition of polycrystalline silicon with silane in vacuum |
US3938175A (en) * | 1974-04-24 | 1976-02-10 | General Motors Corporation | Polycrystalline silicon pressure transducer |
US4203138A (en) * | 1978-07-14 | 1980-05-13 | Elenbaas William J | Video signal recording system with delayed vertical sync |
US4240196A (en) * | 1978-12-29 | 1980-12-23 | Bell Telephone Laboratories, Incorporated | Fabrication of two-level polysilicon devices |
US4228452A (en) * | 1979-05-02 | 1980-10-14 | Eastman Kodak Company | Silicon device with uniformly thick polysilicon |
US4234361A (en) * | 1979-07-05 | 1980-11-18 | Wisconsin Alumni Research Foundation | Process for producing an electrostatically deformable thin silicon membranes utilizing a two-stage diffusion step to form an etchant resistant layer |
US4371890A (en) * | 1980-10-29 | 1983-02-01 | Eastman Kodak Company | Tapering of oxidized polysilicon electrodes |
JPS5918635A (ja) * | 1982-07-23 | 1984-01-31 | Hitachi Ltd | X線リソグラフイ用マスク |
US4522842A (en) * | 1982-09-09 | 1985-06-11 | At&T Bell Laboratories | Boron nitride X-ray masks with controlled stress |
JPS5946648A (ja) * | 1982-09-10 | 1984-03-16 | Nippon Telegr & Teleph Corp <Ntt> | メンブレンの製造方法 |
JPS59136977A (ja) * | 1983-01-26 | 1984-08-06 | Hitachi Ltd | 圧力感知半導体装置とその製造法 |
US4592238A (en) * | 1985-04-15 | 1986-06-03 | Gould Inc. | Laser-recrystallized diaphragm pressure sensor and method of making |
US4744863A (en) * | 1985-04-26 | 1988-05-17 | Wisconsin Alumni Research Foundation | Sealed cavity semiconductor pressure transducers and method of producing the same |
US4672354A (en) * | 1985-12-05 | 1987-06-09 | Kulite Semiconductor Products, Inc. | Fabrication of dielectrically isolated fine line semiconductor transducers and apparatus |
-
1987
- 1987-12-09 US US07/131,082 patent/US4897360A/en not_active Expired - Lifetime
-
1988
- 1988-12-05 EP EP89901653A patent/EP0349633B1/de not_active Expired - Lifetime
- 1988-12-05 WO PCT/US1988/004334 patent/WO1989006045A1/en active IP Right Grant
- 1988-12-05 AT AT89901653T patent/ATE169149T1/de not_active IP Right Cessation
- 1988-12-05 DE DE3856227T patent/DE3856227T2/de not_active Expired - Lifetime
- 1988-12-05 JP JP1501571A patent/JPH0788579B2/ja not_active Expired - Lifetime
- 1988-12-08 CA CA000585355A patent/CA1315648C/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH02502467A (ja) | 1990-08-09 |
JPH0788579B2 (ja) | 1995-09-27 |
DE3856227D1 (de) | 1998-09-03 |
EP0349633B1 (de) | 1998-07-29 |
ATE169149T1 (de) | 1998-08-15 |
US4897360A (en) | 1990-01-30 |
CA1315648C (en) | 1993-04-06 |
WO1989006045A1 (en) | 1989-06-29 |
EP0349633A1 (de) | 1990-01-10 |
EP0349633A4 (en) | 1991-06-05 |
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