DE3780284T2 - Bipolarer heterouebergangs-transistor mit ballistischem betrieb. - Google Patents

Bipolarer heterouebergangs-transistor mit ballistischem betrieb.

Info

Publication number
DE3780284T2
DE3780284T2 DE8787119044T DE3780284T DE3780284T2 DE 3780284 T2 DE3780284 T2 DE 3780284T2 DE 8787119044 T DE8787119044 T DE 8787119044T DE 3780284 T DE3780284 T DE 3780284T DE 3780284 T2 DE3780284 T2 DE 3780284T2
Authority
DE
Germany
Prior art keywords
heterouisition
bipolar
transistor
ballistic operation
ballistic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8787119044T
Other languages
English (en)
Other versions
DE3780284D1 (de
Inventor
Kazuhiko C O Nec Corpora Honjo
Shin-Ichi C O Nec Corpo Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP61307044A external-priority patent/JPH067554B2/ja
Priority claimed from JP13915487A external-priority patent/JPH0666321B2/ja
Priority claimed from JP15810187A external-priority patent/JPH0620070B2/ja
Priority claimed from JP62158100A external-priority patent/JPH0656852B2/ja
Application filed by NEC Corp filed Critical NEC Corp
Publication of DE3780284D1 publication Critical patent/DE3780284D1/de
Application granted granted Critical
Publication of DE3780284T2 publication Critical patent/DE3780284T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H01L29/7371—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
    • H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
DE8787119044T 1986-12-22 1987-12-22 Bipolarer heterouebergangs-transistor mit ballistischem betrieb. Expired - Fee Related DE3780284T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP61307044A JPH067554B2 (ja) 1986-12-22 1986-12-22 バリステイツクヘテロ接合バイポ−ラトランジスタ
JP13915487A JPH0666321B2 (ja) 1987-06-02 1987-06-02 ヘテロ接合バイポ−ラトランジスタ
JP15810187A JPH0620070B2 (ja) 1987-06-24 1987-06-24 ヘテロ接合バイポ−ラトランジスタ
JP62158100A JPH0656852B2 (ja) 1987-06-24 1987-06-24 ヘテロ接合バイポ−ラトランジスタ

Publications (2)

Publication Number Publication Date
DE3780284D1 DE3780284D1 (de) 1992-08-13
DE3780284T2 true DE3780284T2 (de) 1993-01-07

Family

ID=27472201

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8787119044T Expired - Fee Related DE3780284T2 (de) 1986-12-22 1987-12-22 Bipolarer heterouebergangs-transistor mit ballistischem betrieb.

Country Status (3)

Country Link
US (1) US4929997A (de)
EP (1) EP0273363B1 (de)
DE (1) DE3780284T2 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011108334A1 (de) * 2011-07-25 2013-01-31 Texas Instruments Deutschland Gmbh Elektronische Vorrichtung und Verfahren zum Erhöhen der Zuverlässigkeit von Bipolartransistoren unter Hochspannungsbedingungen

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0384113A3 (de) * 1989-02-22 1990-10-24 Motorola, Inc. Bipolarer Heteroübergangs-Transistor mit einer mehrschichtigen Basis
JP2860138B2 (ja) * 1989-03-29 1999-02-24 キヤノン株式会社 半導体装置およびこれを用いた光電変換装置
US5212103A (en) * 1989-05-11 1993-05-18 Mitsubishi Denki Kabushiki Kaisha Method of making a heterojunction bipolar transistor
JPH02297942A (ja) * 1989-05-11 1990-12-10 Mitsubishi Electric Corp 半導体装置及びその製造方法
JPH03218681A (ja) * 1989-11-24 1991-09-26 Toshiba Corp ヘテロ接合バイポーラトランジスタ
US5150185A (en) * 1990-04-18 1992-09-22 Fujitsu Limited Semiconductor device
US5359257A (en) * 1990-12-03 1994-10-25 Bunch Kyle J Ballistic electron, solid state cathode
US5150186A (en) * 1991-03-06 1992-09-22 Micron Technology, Inc. CMOS output pull-up driver
US5329144A (en) * 1993-04-23 1994-07-12 At&T Bell Laboratories Heterojunction bipolar transistor with a specific graded base structure
JP3189878B2 (ja) * 1997-07-16 2001-07-16 日本電気株式会社 バイポーラトランジスタ
JP2018137259A (ja) * 2017-02-20 2018-08-30 株式会社村田製作所 ヘテロ接合バイポーラトランジスタ

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2847451C2 (de) * 1978-11-02 1986-06-12 Telefunken electronic GmbH, 7100 Heilbronn Halbleiterbauelement und Verfahren zum Herstellen
JPH0665216B2 (ja) * 1981-12-28 1994-08-22 日本電気株式会社 半導体装置
DE3380047D1 (en) * 1982-09-17 1989-07-13 France Etat Ballistic heterojunction bipolar transistor
US4719496A (en) * 1982-11-24 1988-01-12 Federico Capasso Repeated velocity overshoot semiconductor device
US4794440A (en) * 1983-05-25 1988-12-27 American Telephone And Telegraph Company, At&T Bell Laboratories Heterojunction bipolar transistor
JPS6010775A (ja) * 1983-06-30 1985-01-19 Fujitsu Ltd ヘテロ接合バイポ−ラ半導体装置
JPS60242671A (ja) * 1984-05-16 1985-12-02 Nippon Telegr & Teleph Corp <Ntt> ヘテロ接合バイポ−ラトランジスタ
JPS6139576A (ja) * 1984-07-31 1986-02-25 Fujitsu Ltd 半導体装置
JPS6285465A (ja) * 1985-10-09 1987-04-18 Fujitsu Ltd ヘテロ接合バイポ−ラ半導体装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011108334A1 (de) * 2011-07-25 2013-01-31 Texas Instruments Deutschland Gmbh Elektronische Vorrichtung und Verfahren zum Erhöhen der Zuverlässigkeit von Bipolartransistoren unter Hochspannungsbedingungen
US9147756B2 (en) 2011-07-25 2015-09-29 Texas Instruments Deutschland Gmbh Electronic device and method for increasing reliability of bipolar transistors under high voltage conditions
DE102011108334B4 (de) * 2011-07-25 2016-05-25 Texas Instruments Deutschland Gmbh Elektronische Vorrichtung und Verfahren zum Erhöhen der Zuverlässigkeit von Bipolartransistoren unter Hochspannungsbedingungen

Also Published As

Publication number Publication date
US4929997A (en) 1990-05-29
EP0273363A3 (en) 1988-11-02
DE3780284D1 (de) 1992-08-13
EP0273363B1 (de) 1992-07-08
EP0273363A2 (de) 1988-07-06

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee