DE3685993D1 - Halbleiterspeicher. - Google Patents

Halbleiterspeicher.

Info

Publication number
DE3685993D1
DE3685993D1 DE8686304009T DE3685993T DE3685993D1 DE 3685993 D1 DE3685993 D1 DE 3685993D1 DE 8686304009 T DE8686304009 T DE 8686304009T DE 3685993 T DE3685993 T DE 3685993T DE 3685993 D1 DE3685993 D1 DE 3685993D1
Authority
DE
Germany
Prior art keywords
semiconductor memory
semiconductor
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8686304009T
Other languages
English (en)
Other versions
DE3685993T2 (de
Inventor
Hirosi Sahara
Harki Toda
Sigeo Osima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE3685993D1 publication Critical patent/DE3685993D1/de
Application granted granted Critical
Publication of DE3685993T2 publication Critical patent/DE3685993T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4094—Bit-line management or control circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Databases & Information Systems (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
DE8686304009T 1985-05-28 1986-05-27 Halbleiterspeicher. Expired - Lifetime DE3685993T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60114807A JPS61273792A (ja) 1985-05-28 1985-05-28 半導体メモリ

Publications (2)

Publication Number Publication Date
DE3685993D1 true DE3685993D1 (de) 1992-08-20
DE3685993T2 DE3685993T2 (de) 1993-02-04

Family

ID=14647180

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686304009T Expired - Lifetime DE3685993T2 (de) 1985-05-28 1986-05-27 Halbleiterspeicher.

Country Status (5)

Country Link
US (1) US4794569A (de)
EP (1) EP0204488B1 (de)
JP (1) JPS61273792A (de)
KR (1) KR900008919B1 (de)
DE (1) DE3685993T2 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4931992B1 (en) * 1986-01-17 1998-03-03 Toshiba Kk Semiconductor memory having barrier transistors connected between sense and restore circuits
FR2667193B1 (fr) * 1990-09-25 1993-07-02 Sgs Thomson Microelectronics Circuit de precharge pour la lecture de memoires.
JPH0757466A (ja) * 1993-08-12 1995-03-03 Toshiba Corp 半導体集積回路

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53134337A (en) * 1977-03-25 1978-11-22 Hitachi Ltd Sense circuit
JPS5760589A (en) * 1980-09-30 1982-04-12 Nec Corp Memory circuit
JPH0711924B2 (ja) * 1981-07-22 1995-02-08 住友電気工業株式会社 長尺ソリツド海底電力ケ−ブル
DE3207498A1 (de) * 1982-03-02 1983-09-08 Siemens AG, 1000 Berlin und 8000 München Integrierter dynamischer schreib-lese-speicher
JPS6048073A (ja) * 1983-08-27 1985-03-15 富士ゼロックス株式会社 表示装置
US4598387A (en) * 1983-09-29 1986-07-01 Advanced Micro Devices, Inc. Capacitive memory signal doubler cell

Also Published As

Publication number Publication date
EP0204488A2 (de) 1986-12-10
US4794569A (en) 1988-12-27
KR860009426A (ko) 1986-12-22
JPS61273792A (ja) 1986-12-04
EP0204488A3 (en) 1990-04-25
EP0204488B1 (de) 1992-07-15
KR900008919B1 (ko) 1990-12-11
DE3685993T2 (de) 1993-02-04

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)