DE3650356D1 - Verfahren zur Herstellung eines Bildlesephotosensors. - Google Patents
Verfahren zur Herstellung eines Bildlesephotosensors.Info
- Publication number
- DE3650356D1 DE3650356D1 DE3650356T DE3650356T DE3650356D1 DE 3650356 D1 DE3650356 D1 DE 3650356D1 DE 3650356 T DE3650356 T DE 3650356T DE 3650356 T DE3650356 T DE 3650356T DE 3650356 D1 DE3650356 D1 DE 3650356D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing
- image reading
- reading photosensor
- photosensor
- image
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/095—Devices sensitive to infrared, visible or ultraviolet radiation comprising amorphous semiconductors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60277002A JPS62136871A (ja) | 1985-12-11 | 1985-12-11 | 光センサ−、その製造方法及びその製造装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3650356D1 true DE3650356D1 (de) | 1995-08-31 |
DE3650356T2 DE3650356T2 (de) | 1996-01-25 |
Family
ID=17577392
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE3650356T Expired - Lifetime DE3650356T2 (de) | 1985-12-11 | 1986-12-11 | Verfahren zur Herstellung eines Bildlesephotosensors. |
Country Status (7)
Country | Link |
---|---|
US (1) | US4751192A (de) |
EP (1) | EP0226461B1 (de) |
JP (1) | JPS62136871A (de) |
CN (1) | CN1006670B (de) |
AU (1) | AU595740B2 (de) |
CA (1) | CA1298176C (de) |
DE (1) | DE3650356T2 (de) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4837048A (en) * | 1985-10-24 | 1989-06-06 | Canon Kabushiki Kaisha | Method for forming a deposited film |
JPS62136885A (ja) * | 1985-12-11 | 1987-06-19 | Canon Inc | 光起電力素子、その製造方法及びその製造装置 |
JPH0645886B2 (ja) * | 1985-12-16 | 1994-06-15 | キヤノン株式会社 | 堆積膜形成法 |
US5391232A (en) * | 1985-12-26 | 1995-02-21 | Canon Kabushiki Kaisha | Device for forming a deposited film |
JPH0746729B2 (ja) * | 1985-12-26 | 1995-05-17 | キヤノン株式会社 | 薄膜トランジスタの製造方法 |
JP2566914B2 (ja) * | 1985-12-28 | 1996-12-25 | キヤノン株式会社 | 薄膜半導体素子及びその形成法 |
AU578174B2 (en) * | 1985-12-28 | 1988-10-13 | Canon Kabushiki Kaisha | Chemical vapor deposition method |
US4954397A (en) * | 1986-10-27 | 1990-09-04 | Canon Kabushiki Kaisha | Light receiving member having a divided-functionally structured light receiving layer having CGL and CTL for use in electrophotography |
US4911102A (en) * | 1987-01-31 | 1990-03-27 | Toyoda Gosei Co., Ltd. | Process of vapor growth of gallium nitride and its apparatus |
JPH02258689A (ja) * | 1989-03-31 | 1990-10-19 | Canon Inc | 結晶質薄膜の形成方法 |
US5321605A (en) * | 1990-06-01 | 1994-06-14 | Motorola, Inc. | Process flow information management system |
US5746834A (en) * | 1996-01-04 | 1998-05-05 | Memc Electronics Materials, Inc. | Method and apparatus for purging barrel reactors |
US5741363A (en) * | 1996-03-22 | 1998-04-21 | Advanced Technology Materials, Inc. | Interiorly partitioned vapor injector for delivery of source reagent vapor mixtures for chemical vapor deposition |
US6039812A (en) * | 1996-10-21 | 2000-03-21 | Abb Research Ltd. | Device for epitaxially growing objects and method for such a growth |
US6080241A (en) * | 1998-09-02 | 2000-06-27 | Emcore Corporation | Chemical vapor deposition chamber having an adjustable flow flange |
JP4954448B2 (ja) * | 2003-04-05 | 2012-06-13 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | 有機金属化合物 |
CN100347078C (zh) * | 2004-09-27 | 2007-11-07 | 上海哈勃化学技术有限公司 | 过氧化氢的浓缩工艺 |
US9920844B2 (en) | 2014-11-26 | 2018-03-20 | Lam Research Corporation | Valve manifold deadleg elimination via reentrant flow path |
US9631276B2 (en) * | 2014-11-26 | 2017-04-25 | Lam Research Corporation | Systems and methods enabling low defect processing via controlled separation and delivery of chemicals during atomic layer deposition |
JP6976043B2 (ja) * | 2015-07-15 | 2021-12-01 | ラム リサーチ コーポレーションLam Research Corporation | 原子層堆積中における化学物質の制御された分離および送出により低欠陥処理を可能にするシステムおよび方法 |
US11661654B2 (en) | 2018-04-18 | 2023-05-30 | Lam Research Corporation | Substrate processing systems including gas delivery system with reduced dead legs |
Family Cites Families (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US31708A (en) * | 1861-03-19 | Improved device for coating pins | ||
US3306768A (en) * | 1964-01-08 | 1967-02-28 | Motorola Inc | Method of forming thin oxide films |
US3473978A (en) * | 1967-04-24 | 1969-10-21 | Motorola Inc | Epitaxial growth of germanium |
US3888705A (en) * | 1973-12-19 | 1975-06-10 | Nasa | Vapor phase growth of groups iii-v compounds by hydrogen chloride transport of the elements |
US4146657A (en) * | 1976-11-01 | 1979-03-27 | Gordon Roy G | Method of depositing electrically conductive, infra-red reflective, transparent coatings of stannic oxide |
JPS54158190A (en) * | 1978-06-05 | 1979-12-13 | Yamazaki Shunpei | Semiconductor device and method of fabricating same |
GB2038086A (en) * | 1978-12-19 | 1980-07-16 | Standard Telephones Cables Ltd | Amorphous semiconductor devices |
US4239811A (en) * | 1979-08-16 | 1980-12-16 | International Business Machines Corporation | Low pressure chemical vapor deposition of silicon dioxide with oxygen enhancement of the chlorosilane-nitrous oxide reaction |
JPS5710920A (en) * | 1980-06-23 | 1982-01-20 | Canon Inc | Film forming process |
IE52209B1 (en) * | 1980-09-09 | 1987-08-05 | Energy Conversion Devices Inc | Multiple cell photoresponsive amorphous alloys and devices |
US4522663A (en) * | 1980-09-09 | 1985-06-11 | Sovonics Solar Systems | Method for optimizing photoresponsive amorphous alloys and devices |
US4357179A (en) * | 1980-12-23 | 1982-11-02 | Bell Telephone Laboratories, Incorporated | Method for producing devices comprising high density amorphous silicon or germanium layers by low pressure CVD technique |
US4421592A (en) * | 1981-05-22 | 1983-12-20 | United Technologies Corporation | Plasma enhanced deposition of semiconductors |
US4402762A (en) * | 1981-06-02 | 1983-09-06 | John Puthenveetil K | Method of making highly stable modified amorphous silicon and germanium films |
JPS5833829A (ja) * | 1981-08-24 | 1983-02-28 | Toshiba Corp | 薄膜形成装置 |
US4652463A (en) * | 1982-03-29 | 1987-03-24 | Hughes Aircraft | Process for depositing a conductive oxide layer |
JPS58170536A (ja) * | 1982-03-31 | 1983-10-07 | Fujitsu Ltd | プラズマ処理方法及びその装置 |
US4462847A (en) * | 1982-06-21 | 1984-07-31 | Texas Instruments Incorporated | Fabrication of dielectrically isolated microelectronic semiconductor circuits utilizing selective growth by low pressure vapor deposition |
US4504518A (en) * | 1982-09-24 | 1985-03-12 | Energy Conversion Devices, Inc. | Method of making amorphous semiconductor alloys and devices using microwave energy |
US4615905A (en) * | 1982-09-24 | 1986-10-07 | Sovonics Solar Systems, Inc. | Method of depositing semiconductor films by free radical generation |
JPH0614552B2 (ja) * | 1983-02-02 | 1994-02-23 | 富士ゼロックス株式会社 | 光電変換素子の製造方法 |
JPS59159167A (ja) * | 1983-03-01 | 1984-09-08 | Zenko Hirose | アモルフアスシリコン膜の形成方法 |
JPH0614560B2 (ja) * | 1983-03-11 | 1994-02-23 | キヤノン株式会社 | フォトセンサ |
JPS59199035A (ja) * | 1983-04-26 | 1984-11-12 | Fuji Electric Corp Res & Dev Ltd | 薄膜生成装置 |
JPS6026664A (ja) * | 1983-07-22 | 1985-02-09 | Canon Inc | アモルフアスシリコン堆積膜形成法 |
DE3429899A1 (de) * | 1983-08-16 | 1985-03-07 | Canon K.K., Tokio/Tokyo | Verfahren zur bildung eines abscheidungsfilms |
US4637938A (en) * | 1983-08-19 | 1987-01-20 | Energy Conversion Devices, Inc. | Methods of using selective optical excitation in deposition processes and the detection of new compositions |
JPS6043819A (ja) * | 1983-08-19 | 1985-03-08 | Semiconductor Energy Lab Co Ltd | 気相反応方法 |
US4546008A (en) * | 1983-11-07 | 1985-10-08 | Canon Kabushiki Kaisha | Method for forming a deposition film |
JPH0763097B2 (ja) * | 1984-02-10 | 1995-07-05 | キヤノン株式会社 | フオトセンサの作製法 |
US4645689A (en) * | 1984-02-17 | 1987-02-24 | At&T Bell Laboratories | Deposition technique |
JPS60243663A (ja) * | 1984-05-18 | 1985-12-03 | Kyocera Corp | 電子写真感光体 |
US4624736A (en) * | 1984-07-24 | 1986-11-25 | The United States Of America As Represented By The United States Department Of Energy | Laser/plasma chemical processing of substrates |
US4657777A (en) * | 1984-12-17 | 1987-04-14 | Canon Kabushiki Kaisha | Formation of deposited film |
JPH07101751B2 (ja) * | 1985-03-28 | 1995-11-01 | キヤノン株式会社 | 光起電力素子の製造方法 |
AU595251B2 (en) * | 1985-10-23 | 1990-03-29 | Canon Kabushiki Kaisha | Method for forming deposited film |
JPS62136885A (ja) * | 1985-12-11 | 1987-06-19 | Canon Inc | 光起電力素子、その製造方法及びその製造装置 |
-
1985
- 1985-12-11 JP JP60277002A patent/JPS62136871A/ja active Pending
-
1986
- 1986-12-08 US US06/938,997 patent/US4751192A/en not_active Expired - Lifetime
- 1986-12-09 AU AU66321/86A patent/AU595740B2/en not_active Expired
- 1986-12-10 CA CA000524949A patent/CA1298176C/en not_active Expired - Lifetime
- 1986-12-11 EP EP86309678A patent/EP0226461B1/de not_active Expired - Lifetime
- 1986-12-11 DE DE3650356T patent/DE3650356T2/de not_active Expired - Lifetime
- 1986-12-11 CN CN86108452A patent/CN1006670B/zh not_active Expired
Also Published As
Publication number | Publication date |
---|---|
AU6632186A (en) | 1987-06-18 |
EP0226461A2 (de) | 1987-06-24 |
EP0226461A3 (en) | 1988-11-23 |
JPS62136871A (ja) | 1987-06-19 |
AU595740B2 (en) | 1990-04-05 |
CN86108452A (zh) | 1987-09-23 |
DE3650356T2 (de) | 1996-01-25 |
CN1006670B (zh) | 1990-01-31 |
CA1298176C (en) | 1992-03-31 |
EP0226461B1 (de) | 1995-07-26 |
US4751192A (en) | 1988-06-14 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |