DE3634140A1 - Verfahren zur selektiven bildung einer abgeschiedenen schicht - Google Patents

Verfahren zur selektiven bildung einer abgeschiedenen schicht

Info

Publication number
DE3634140A1
DE3634140A1 DE19863634140 DE3634140A DE3634140A1 DE 3634140 A1 DE3634140 A1 DE 3634140A1 DE 19863634140 DE19863634140 DE 19863634140 DE 3634140 A DE3634140 A DE 3634140A DE 3634140 A1 DE3634140 A1 DE 3634140A1
Authority
DE
Germany
Prior art keywords
substance
layer
deposited
sio
deposited layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19863634140
Other languages
German (de)
English (en)
Other versions
DE3634140C2 (enExample
Inventor
Takao Yonehara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP22339585A external-priority patent/JPS6281711A/ja
Priority claimed from JP22339485A external-priority patent/JPS6281728A/ja
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE3634140A1 publication Critical patent/DE3634140A1/de
Application granted granted Critical
Publication of DE3634140C2 publication Critical patent/DE3634140C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
    • H10P14/271—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials characterised by the preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/416—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials of highly doped semiconductor materials, e.g. polysilicon layers or amorphous silicon layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/041—Manufacture or treatment of isolation regions comprising polycrystalline semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/40—Isolation regions comprising polycrystalline semiconductor materials
DE19863634140 1985-10-07 1986-10-07 Verfahren zur selektiven bildung einer abgeschiedenen schicht Granted DE3634140A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP22339585A JPS6281711A (ja) 1985-10-07 1985-10-07 堆積膜の選択形成方法
JP22339485A JPS6281728A (ja) 1985-10-07 1985-10-07 素子分離領域の形成方法

Publications (2)

Publication Number Publication Date
DE3634140A1 true DE3634140A1 (de) 1987-04-09
DE3634140C2 DE3634140C2 (enExample) 1988-10-27

Family

ID=26525448

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19863634140 Granted DE3634140A1 (de) 1985-10-07 1986-10-07 Verfahren zur selektiven bildung einer abgeschiedenen schicht

Country Status (4)

Country Link
US (1) US5393646A (enExample)
DE (1) DE3634140A1 (enExample)
FR (1) FR2588416B1 (enExample)
GB (1) GB2183090B (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3713992A1 (de) * 1986-04-28 1987-10-29 Canon Kk Verfahren zur bildung einer mehrschichtenstruktur
DE3934301A1 (de) * 1988-10-14 1990-04-19 Corning Inc Einstueckiges optisches element und verfahren zu dessen herstellung
US5296087A (en) * 1987-08-24 1994-03-22 Canon Kabushiki Kaisha Crystal formation method

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5324536A (en) * 1986-04-28 1994-06-28 Canon Kabushiki Kaisha Method of forming a multilayered structure
JP2505754B2 (ja) * 1986-07-11 1996-06-12 キヤノン株式会社 光電変換装置の製造方法
EP0312202A1 (en) * 1987-08-24 1989-04-19 Canon Kabushiki Kaisha Crystal formation method
EP0307108A1 (en) * 1987-08-24 1989-03-15 Canon Kabushiki Kaisha Method of forming crystal
EP0339793B1 (en) * 1988-03-27 1994-01-26 Canon Kabushiki Kaisha Method for forming crystal layer on a substrate
US4847214A (en) * 1988-04-18 1989-07-11 Motorola Inc. Method for filling trenches from a seed layer
US5304461A (en) * 1989-01-10 1994-04-19 Kabushiki Kaisha Kobe Seiko Sho Process for the selective deposition of thin diamond film by gas phase synthesis
GB2228745B (en) * 1989-01-10 1993-09-08 Kobe Steel Ltd Process for the selective deposition of thin diamond film by gas phase synthesis
JP4310076B2 (ja) * 2001-05-31 2009-08-05 キヤノン株式会社 結晶性薄膜の製造方法
JP6953480B2 (ja) * 2019-07-31 2021-10-27 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置、およびプログラム

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1229128A (enExample) * 1968-06-14 1971-04-21
DE2151127B2 (de) * 1970-12-16 1980-07-10 International Business Machines Corp., Armonk, N.Y. (V.St.A.) Verfahren zum Abscheiden eines Metallisierungsmusters und seine Anwendung

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1229093B (de) * 1963-01-23 1966-11-24 Basf Ag Verfahren zur Herstellung von Hexahydropyrimidinderivaten
US3370995A (en) * 1965-08-02 1968-02-27 Texas Instruments Inc Method for fabricating electrically isolated semiconductor devices in integrated circuits
GB1191102A (en) * 1966-06-29 1970-05-06 Dom Holdings Ltd Improvements in or relating to Clips for a Pipe or the like
CH490515A (de) * 1967-11-22 1970-05-15 Battelle Development Corp Verfahren zur Erzeugung von kristallinen Abscheidungen in Form eines Musters auf einer elektrisch isolierenden amorphen, poly- oder einkristallinen Unterlage
US3697342A (en) * 1970-12-16 1972-10-10 Ibm Method of selective chemical vapor deposition
US3697343A (en) * 1970-12-16 1972-10-10 Ibm Method of selective chemical vapor deposition
DE2151346C3 (de) * 1971-10-15 1981-04-09 Deutsche Itt Industries Gmbh, 7800 Freiburg Verfahren zum Herstellung einer aus Einkristallschichtteilen und Polykristallschichtteilen bestehenden Halbleiterschicht auf einem Einkristallkörper
JPS53102628A (en) * 1977-02-21 1978-09-07 Canon Inc Manufacture for parallel type stripe filter
US4477308A (en) * 1982-09-30 1984-10-16 At&T Bell Laboratories Heteroepitaxy of multiconstituent material by means of a _template layer
JPS6050920A (ja) * 1983-08-30 1985-03-22 Toshiba Corp 半導体装置の製造方法
WO1985002942A1 (en) * 1983-12-19 1985-07-04 Mobil Solar Energy Corporation Method of fabricating solar cells
JPS60173842A (ja) * 1984-02-20 1985-09-07 Canon Inc パタ−ン形成方法
US4595608A (en) * 1984-11-09 1986-06-17 Harris Corporation Method for selective deposition of tungsten on silicon
US4650695A (en) * 1985-05-13 1987-03-17 Mobil Solar Energy Corporation Method of fabricating solar cells
US4619038A (en) * 1985-08-15 1986-10-28 Motorola, Inc. Selective titanium silicide formation
US4617087A (en) * 1985-09-27 1986-10-14 International Business Machines Corporation Method for differential selective deposition of metal for fabricating metal contacts in integrated semiconductor circuits
JPS63237533A (ja) * 1987-03-26 1988-10-04 Canon Inc ２−６族化合物膜の選択形成方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1229128A (enExample) * 1968-06-14 1971-04-21
DE2151127B2 (de) * 1970-12-16 1980-07-10 International Business Machines Corp., Armonk, N.Y. (V.St.A.) Verfahren zum Abscheiden eines Metallisierungsmusters und seine Anwendung

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
GB-Z.: Nature 195 (1962), S. 485 *
US-Z.: J. Electrochem.Soc.127 (1980), S. 194-202 *
US-Z.: J.Electorchem.Soc.128 (1981), S. 1353-1359 *
US-Z.: J.Electrochem.Soc.131 (1984), S. 2348-2353 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3713992A1 (de) * 1986-04-28 1987-10-29 Canon Kk Verfahren zur bildung einer mehrschichtenstruktur
US5296087A (en) * 1987-08-24 1994-03-22 Canon Kabushiki Kaisha Crystal formation method
DE3934301A1 (de) * 1988-10-14 1990-04-19 Corning Inc Einstueckiges optisches element und verfahren zu dessen herstellung

Also Published As

Publication number Publication date
GB2183090B (en) 1989-09-13
DE3634140C2 (enExample) 1988-10-27
US5393646A (en) 1995-02-28
FR2588416A1 (fr) 1987-04-10
GB2183090A (en) 1987-05-28
GB8623956D0 (en) 1986-11-12
FR2588416B1 (fr) 1991-06-21

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
D2 Grant after examination
8364 No opposition during term of opposition