GB2183090B - Method for selective formation of deposited film - Google Patents

Method for selective formation of deposited film

Info

Publication number
GB2183090B
GB2183090B GB8623956A GB8623956A GB2183090B GB 2183090 B GB2183090 B GB 2183090B GB 8623956 A GB8623956 A GB 8623956A GB 8623956 A GB8623956 A GB 8623956A GB 2183090 B GB2183090 B GB 2183090B
Authority
GB
United Kingdom
Prior art keywords
deposited film
selective formation
selective
formation
deposited
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB8623956A
Other languages
English (en)
Other versions
GB2183090A (en
GB8623956D0 (en
Inventor
Takao Yonehara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP22339585A external-priority patent/JPS6281711A/ja
Priority claimed from JP22339485A external-priority patent/JPS6281728A/ja
Application filed by Canon Inc filed Critical Canon Inc
Publication of GB8623956D0 publication Critical patent/GB8623956D0/en
Publication of GB2183090A publication Critical patent/GB2183090A/en
Application granted granted Critical
Publication of GB2183090B publication Critical patent/GB2183090B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
    • H10P14/271—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials characterised by the preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/416—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials of highly doped semiconductor materials, e.g. polysilicon layers or amorphous silicon layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/041—Manufacture or treatment of isolation regions comprising polycrystalline semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/40—Isolation regions comprising polycrystalline semiconductor materials
GB8623956A 1985-10-07 1986-10-06 Method for selective formation of deposited film Expired GB2183090B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP22339585A JPS6281711A (ja) 1985-10-07 1985-10-07 堆積膜の選択形成方法
JP22339485A JPS6281728A (ja) 1985-10-07 1985-10-07 素子分離領域の形成方法

Publications (3)

Publication Number Publication Date
GB8623956D0 GB8623956D0 (en) 1986-11-12
GB2183090A GB2183090A (en) 1987-05-28
GB2183090B true GB2183090B (en) 1989-09-13

Family

ID=26525448

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8623956A Expired GB2183090B (en) 1985-10-07 1986-10-06 Method for selective formation of deposited film

Country Status (4)

Country Link
US (1) US5393646A (enExample)
DE (1) DE3634140A1 (enExample)
FR (1) FR2588416B1 (enExample)
GB (1) GB2183090B (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0828357B2 (ja) * 1986-04-28 1996-03-21 キヤノン株式会社 多層構造の形成方法
US5324536A (en) * 1986-04-28 1994-06-28 Canon Kabushiki Kaisha Method of forming a multilayered structure
JP2505754B2 (ja) * 1986-07-11 1996-06-12 キヤノン株式会社 光電変換装置の製造方法
EP0312202A1 (en) * 1987-08-24 1989-04-19 Canon Kabushiki Kaisha Crystal formation method
EP0307108A1 (en) * 1987-08-24 1989-03-15 Canon Kabushiki Kaisha Method of forming crystal
US5296087A (en) * 1987-08-24 1994-03-22 Canon Kabushiki Kaisha Crystal formation method
EP0339793B1 (en) * 1988-03-27 1994-01-26 Canon Kabushiki Kaisha Method for forming crystal layer on a substrate
US4847214A (en) * 1988-04-18 1989-07-11 Motorola Inc. Method for filling trenches from a seed layer
US4952026A (en) * 1988-10-14 1990-08-28 Corning Incorporated Integral optical element and method
US5304461A (en) * 1989-01-10 1994-04-19 Kabushiki Kaisha Kobe Seiko Sho Process for the selective deposition of thin diamond film by gas phase synthesis
GB2228745B (en) * 1989-01-10 1993-09-08 Kobe Steel Ltd Process for the selective deposition of thin diamond film by gas phase synthesis
JP4310076B2 (ja) * 2001-05-31 2009-08-05 キヤノン株式会社 結晶性薄膜の製造方法
JP6953480B2 (ja) * 2019-07-31 2021-10-27 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置、およびプログラム

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1147599A (en) * 1965-08-02 1969-04-02 Texas Instruments Inc Method for fabricating semiconductor devices in integrated circuits
GB1191102A (en) * 1966-06-29 1970-05-06 Dom Holdings Ltd Improvements in or relating to Clips for a Pipe or the like
GB1250201A (enExample) * 1967-11-22 1971-10-20
GB1261789A (en) * 1963-01-23 1972-01-26 Rca Corp Epitaxial gallium arsenide diodes
GB2129019A (en) * 1982-09-30 1984-05-10 Western Electric Co Method of forming a heterostructure comprising a heteroepitaxial multiconstituent material
EP0147913A2 (en) * 1983-08-30 1985-07-10 Kabushiki Kaisha Toshiba Method of producing a semiconductor device comprising a selective vapour growth technique
GB2160360A (en) * 1983-12-19 1985-12-18 Mobil Solar Energy Corp Method of fabricating solar cells
GB2175137A (en) * 1985-05-13 1986-11-19 Mobil Solar Energy Corp Hydrogen passivation of polysilicon
EP0212266A2 (en) * 1985-08-15 1987-03-04 Motorola, Inc. Selective titanium silicide formation
EP0216157A2 (en) * 1985-09-27 1987-04-01 International Business Machines Corporation A method of depositing metal contact regions on a silicon substrate

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1769605A1 (de) * 1968-06-14 1971-07-01 Siemens Ag Verfahren zum Herstellen epitaktischer Aufwachsschichten aus Halbleitermaterial fuer elektrische Bauelemente
US3697342A (en) * 1970-12-16 1972-10-10 Ibm Method of selective chemical vapor deposition
DE2151127C3 (de) * 1970-12-16 1981-04-16 International Business Machines Corp., 10504 Armonk, N.Y. Verfahren zum Abscheiden eines Metallisierungsmusters und seine Anwendung
US3697343A (en) * 1970-12-16 1972-10-10 Ibm Method of selective chemical vapor deposition
DE2151346C3 (de) * 1971-10-15 1981-04-09 Deutsche Itt Industries Gmbh, 7800 Freiburg Verfahren zum Herstellung einer aus Einkristallschichtteilen und Polykristallschichtteilen bestehenden Halbleiterschicht auf einem Einkristallkörper
JPS53102628A (en) * 1977-02-21 1978-09-07 Canon Inc Manufacture for parallel type stripe filter
JPS60173842A (ja) * 1984-02-20 1985-09-07 Canon Inc パタ−ン形成方法
US4595608A (en) * 1984-11-09 1986-06-17 Harris Corporation Method for selective deposition of tungsten on silicon
JPS63237533A (ja) * 1987-03-26 1988-10-04 Canon Inc ２−６族化合物膜の選択形成方法

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1261789A (en) * 1963-01-23 1972-01-26 Rca Corp Epitaxial gallium arsenide diodes
GB1147599A (en) * 1965-08-02 1969-04-02 Texas Instruments Inc Method for fabricating semiconductor devices in integrated circuits
GB1191102A (en) * 1966-06-29 1970-05-06 Dom Holdings Ltd Improvements in or relating to Clips for a Pipe or the like
GB1250201A (enExample) * 1967-11-22 1971-10-20
GB2129019A (en) * 1982-09-30 1984-05-10 Western Electric Co Method of forming a heterostructure comprising a heteroepitaxial multiconstituent material
EP0147913A2 (en) * 1983-08-30 1985-07-10 Kabushiki Kaisha Toshiba Method of producing a semiconductor device comprising a selective vapour growth technique
GB2160360A (en) * 1983-12-19 1985-12-18 Mobil Solar Energy Corp Method of fabricating solar cells
GB2175137A (en) * 1985-05-13 1986-11-19 Mobil Solar Energy Corp Hydrogen passivation of polysilicon
EP0212266A2 (en) * 1985-08-15 1987-03-04 Motorola, Inc. Selective titanium silicide formation
EP0216157A2 (en) * 1985-09-27 1987-04-01 International Business Machines Corporation A method of depositing metal contact regions on a silicon substrate

Also Published As

Publication number Publication date
DE3634140C2 (enExample) 1988-10-27
US5393646A (en) 1995-02-28
FR2588416A1 (fr) 1987-04-10
DE3634140A1 (de) 1987-04-09
GB2183090A (en) 1987-05-28
GB8623956D0 (en) 1986-11-12
FR2588416B1 (fr) 1991-06-21

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Legal Events

Date Code Title Description
PE20 Patent expired after termination of 20 years

Effective date: 20061005