FR2588416B1 - Procede de formation selective d'un film depose - Google Patents

Procede de formation selective d'un film depose

Info

Publication number
FR2588416B1
FR2588416B1 FR868613927A FR8613927A FR2588416B1 FR 2588416 B1 FR2588416 B1 FR 2588416B1 FR 868613927 A FR868613927 A FR 868613927A FR 8613927 A FR8613927 A FR 8613927A FR 2588416 B1 FR2588416 B1 FR 2588416B1
Authority
FR
France
Prior art keywords
deposited film
selective formation
selective
formation
deposited
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR868613927A
Other languages
English (en)
Other versions
FR2588416A1 (fr
Inventor
Takao Yonehara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP22339585A external-priority patent/JPS6281711A/ja
Priority claimed from JP22339485A external-priority patent/JPS6281728A/ja
Application filed by Canon Inc filed Critical Canon Inc
Publication of FR2588416A1 publication Critical patent/FR2588416A1/fr
Application granted granted Critical
Publication of FR2588416B1 publication Critical patent/FR2588416B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/763—Polycrystalline semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/32055—Deposition of semiconductive layers, e.g. poly - or amorphous silicon layers
FR868613927A 1985-10-07 1986-10-07 Procede de formation selective d'un film depose Expired - Lifetime FR2588416B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP22339585A JPS6281711A (ja) 1985-10-07 1985-10-07 堆積膜の選択形成方法
JP22339485A JPS6281728A (ja) 1985-10-07 1985-10-07 素子分離領域の形成方法

Publications (2)

Publication Number Publication Date
FR2588416A1 FR2588416A1 (fr) 1987-04-10
FR2588416B1 true FR2588416B1 (fr) 1991-06-21

Family

ID=26525448

Family Applications (1)

Application Number Title Priority Date Filing Date
FR868613927A Expired - Lifetime FR2588416B1 (fr) 1985-10-07 1986-10-07 Procede de formation selective d'un film depose

Country Status (4)

Country Link
US (1) US5393646A (fr)
DE (1) DE3634140A1 (fr)
FR (1) FR2588416B1 (fr)
GB (1) GB2183090B (fr)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0828357B2 (ja) * 1986-04-28 1996-03-21 キヤノン株式会社 多層構造の形成方法
US5324536A (en) * 1986-04-28 1994-06-28 Canon Kabushiki Kaisha Method of forming a multilayered structure
JP2505754B2 (ja) * 1986-07-11 1996-06-12 キヤノン株式会社 光電変換装置の製造方法
US5296087A (en) * 1987-08-24 1994-03-22 Canon Kabushiki Kaisha Crystal formation method
EP0312202A1 (fr) * 1987-08-24 1989-04-19 Canon Kabushiki Kaisha Procédé pour former un cristal
AU623863B2 (en) * 1987-08-24 1992-05-28 Canon Kabushiki Kaisha Method of forming crystals
DE68912638T2 (de) * 1988-03-27 1994-06-16 Canon Kk Verfahren zur Herstellung einer Kristallschicht auf einem Substrat.
US4847214A (en) * 1988-04-18 1989-07-11 Motorola Inc. Method for filling trenches from a seed layer
US4952026A (en) * 1988-10-14 1990-08-28 Corning Incorporated Integral optical element and method
US5304461A (en) * 1989-01-10 1994-04-19 Kabushiki Kaisha Kobe Seiko Sho Process for the selective deposition of thin diamond film by gas phase synthesis
GB2228745B (en) * 1989-01-10 1993-09-08 Kobe Steel Ltd Process for the selective deposition of thin diamond film by gas phase synthesis
JP4310076B2 (ja) * 2001-05-31 2009-08-05 キヤノン株式会社 結晶性薄膜の製造方法
JP6953480B2 (ja) * 2019-07-31 2021-10-27 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置、およびプログラム

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1229093B (de) * 1963-01-23 1966-11-24 Basf Ag Verfahren zur Herstellung von Hexahydropyrimidinderivaten
US3370995A (en) * 1965-08-02 1968-02-27 Texas Instruments Inc Method for fabricating electrically isolated semiconductor devices in integrated circuits
GB1191102A (en) * 1966-06-29 1970-05-06 Dom Holdings Ltd Improvements in or relating to Clips for a Pipe or the like
CH490515A (de) * 1967-11-22 1970-05-15 Battelle Development Corp Verfahren zur Erzeugung von kristallinen Abscheidungen in Form eines Musters auf einer elektrisch isolierenden amorphen, poly- oder einkristallinen Unterlage
DE1769605A1 (de) * 1968-06-14 1971-07-01 Siemens Ag Verfahren zum Herstellen epitaktischer Aufwachsschichten aus Halbleitermaterial fuer elektrische Bauelemente
US3697343A (en) * 1970-12-16 1972-10-10 Ibm Method of selective chemical vapor deposition
US3697342A (en) * 1970-12-16 1972-10-10 Ibm Method of selective chemical vapor deposition
DE2151127C3 (de) * 1970-12-16 1981-04-16 International Business Machines Corp., 10504 Armonk, N.Y. Verfahren zum Abscheiden eines Metallisierungsmusters und seine Anwendung
DE2151346C3 (de) * 1971-10-15 1981-04-09 Deutsche Itt Industries Gmbh, 7800 Freiburg Verfahren zum Herstellung einer aus Einkristallschichtteilen und Polykristallschichtteilen bestehenden Halbleiterschicht auf einem Einkristallkörper
JPS53102628A (en) * 1977-02-21 1978-09-07 Canon Inc Manufacture for parallel type stripe filter
US4477308A (en) * 1982-09-30 1984-10-16 At&T Bell Laboratories Heteroepitaxy of multiconstituent material by means of a _template layer
JPS6050920A (ja) * 1983-08-30 1985-03-22 Toshiba Corp 半導体装置の製造方法
NL8420336A (nl) * 1983-12-19 1985-11-01 Mobil Solar Energy Corp Werkwijze voor het vervaardigen van zonnecellen.
JPS60173842A (ja) * 1984-02-20 1985-09-07 Canon Inc パタ−ン形成方法
US4595608A (en) * 1984-11-09 1986-06-17 Harris Corporation Method for selective deposition of tungsten on silicon
US4650695A (en) * 1985-05-13 1987-03-17 Mobil Solar Energy Corporation Method of fabricating solar cells
US4619038A (en) * 1985-08-15 1986-10-28 Motorola, Inc. Selective titanium silicide formation
US4617087A (en) * 1985-09-27 1986-10-14 International Business Machines Corporation Method for differential selective deposition of metal for fabricating metal contacts in integrated semiconductor circuits
JPS63237533A (ja) * 1987-03-26 1988-10-04 Canon Inc ２−６族化合物膜の選択形成方法

Also Published As

Publication number Publication date
DE3634140C2 (fr) 1988-10-27
GB2183090B (en) 1989-09-13
US5393646A (en) 1995-02-28
GB8623956D0 (en) 1986-11-12
DE3634140A1 (de) 1987-04-09
GB2183090A (en) 1987-05-28
FR2588416A1 (fr) 1987-04-10

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