DE68913254T2 - Gegenstand aus Kristall und Verfahren zu seiner Herstellung. - Google Patents

Gegenstand aus Kristall und Verfahren zu seiner Herstellung.

Info

Publication number
DE68913254T2
DE68913254T2 DE68913254T DE68913254T DE68913254T2 DE 68913254 T2 DE68913254 T2 DE 68913254T2 DE 68913254 T DE68913254 T DE 68913254T DE 68913254 T DE68913254 T DE 68913254T DE 68913254 T2 DE68913254 T2 DE 68913254T2
Authority
DE
Germany
Prior art keywords
manufacture
crystal article
article
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68913254T
Other languages
English (en)
Other versions
DE68913254D1 (de
Inventor
Nobuhiko Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE68913254D1 publication Critical patent/DE68913254D1/de
Publication of DE68913254T2 publication Critical patent/DE68913254T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/12—Liquid-phase epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02543—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H01L21/02645—Seed materials
DE68913254T 1988-10-02 1989-09-29 Gegenstand aus Kristall und Verfahren zu seiner Herstellung. Expired - Fee Related DE68913254T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP24782088 1988-10-02
JP1255523A JP2660064B2 (ja) 1988-10-02 1989-09-29 結晶物品及びその形成方法

Publications (2)

Publication Number Publication Date
DE68913254D1 DE68913254D1 (de) 1994-03-31
DE68913254T2 true DE68913254T2 (de) 1994-07-07

Family

ID=26538439

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68913254T Expired - Fee Related DE68913254T2 (de) 1988-10-02 1989-09-29 Gegenstand aus Kristall und Verfahren zu seiner Herstellung.

Country Status (4)

Country Link
US (1) US5320907A (de)
EP (1) EP0364139B1 (de)
JP (1) JP2660064B2 (de)
DE (1) DE68913254T2 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2900588B2 (ja) * 1990-11-16 1999-06-02 キヤノン株式会社 結晶物品の形成方法
JP3352340B2 (ja) * 1995-10-06 2002-12-03 キヤノン株式会社 半導体基体とその製造方法
US20030087503A1 (en) * 1994-03-10 2003-05-08 Canon Kabushiki Kaisha Process for production of semiconductor substrate
US7148119B1 (en) 1994-03-10 2006-12-12 Canon Kabushiki Kaisha Process for production of semiconductor substrate
US5462012A (en) * 1994-11-29 1995-10-31 At&T Corp. Substrates and methods for gas phase deposition of semiconductors and other materials
JP3751329B2 (ja) * 1994-12-06 2006-03-01 コマツ電子金属株式会社 エピタキシャルウェーハの製造方法
US6103598A (en) * 1995-07-13 2000-08-15 Canon Kabushiki Kaisha Process for producing semiconductor substrate
CN1076861C (zh) * 1995-07-21 2001-12-26 佳能株式会社 半导体衬底及其制造方法
JP3520403B2 (ja) * 1998-01-23 2004-04-19 セイコーエプソン株式会社 圧電体薄膜素子、アクチュエータ、インクジェット式記録ヘッド、及びインクジェット式記録装置
JP4310076B2 (ja) * 2001-05-31 2009-08-05 キヤノン株式会社 結晶性薄膜の製造方法
US9790343B2 (en) 2008-06-12 2017-10-17 Avery Dennison Corporation Porous material and method for producing the same
ES2909735T3 (es) 2012-08-21 2022-05-10 Vertera Inc Método para fabricar artículos porosos

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3617822A (en) * 1967-12-05 1971-11-02 Sony Corp Semiconductor integrated circuit
NL188550C (nl) * 1981-07-02 1992-07-16 Suwa Seikosha Kk Werkwijze voor het vervaardigen van een halfgeleidersubstraat.
US4637127A (en) * 1981-07-07 1987-01-20 Nippon Electric Co., Ltd. Method for manufacturing a semiconductor device
US4412868A (en) * 1981-12-23 1983-11-01 General Electric Company Method of making integrated circuits utilizing ion implantation and selective epitaxial growth
US4557794A (en) * 1984-05-07 1985-12-10 Rca Corporation Method for forming a void-free monocrystalline epitaxial layer on a mask
JP2592834B2 (ja) * 1987-03-27 1997-03-19 キヤノン株式会社 結晶物品およびその形成方法
US4758531A (en) * 1987-10-23 1988-07-19 International Business Machines Corporation Method of making defect free silicon islands using SEG

Also Published As

Publication number Publication date
US5320907A (en) 1994-06-14
EP0364139B1 (de) 1994-02-23
JPH02191320A (ja) 1990-07-27
JP2660064B2 (ja) 1997-10-08
DE68913254D1 (de) 1994-03-31
EP0364139A1 (de) 1990-04-18

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee