DE3609503A1 - Heizwiderstandselement und heizwiderstand unter verwendung desselben - Google Patents

Heizwiderstandselement und heizwiderstand unter verwendung desselben

Info

Publication number
DE3609503A1
DE3609503A1 DE19863609503 DE3609503A DE3609503A1 DE 3609503 A1 DE3609503 A1 DE 3609503A1 DE 19863609503 DE19863609503 DE 19863609503 DE 3609503 A DE3609503 A DE 3609503A DE 3609503 A1 DE3609503 A1 DE 3609503A1
Authority
DE
Germany
Prior art keywords
element according
resistance element
heating
heating resistance
halogen atoms
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19863609503
Other languages
German (de)
English (en)
Other versions
DE3609503C2 (enExample
Inventor
Shinichi Hiratsuka Kanagawa Hirasawa
Hirokazu Komuro
Tatsuo Yokohama Kanagawa Masaki
Masao Sugata
Yasuhiro Kawasaki Kanagawa Yano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP60055654A external-priority patent/JPS61216301A/ja
Priority claimed from JP60058845A external-priority patent/JPS61218113A/ja
Priority claimed from JP60058843A external-priority patent/JPS61218111A/ja
Priority claimed from JP60058527A external-priority patent/JPS61218105A/ja
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE3609503A1 publication Critical patent/DE3609503A1/de
Application granted granted Critical
Publication of DE3609503C2 publication Critical patent/DE3609503C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/20—Heating elements having extended surface area substantially in a two-dimensional [2D] plane, e.g. plate-heater
    • H05B3/22—Heating elements having extended surface area substantially in a two-dimensional [2D] plane, e.g. plate-heater non-flexible
    • H05B3/26—Heating elements having extended surface area substantially in a two-dimensional [2D] plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C23C14/0057—Reactive sputtering using reactive gases other than O2, H2O, N2, NH3 or CH4
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
    • H05B3/12—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
    • H05B3/14—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
    • H05B3/145—Carbon only, e.g. carbon black, graphite
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
    • H05B2203/011—Heaters using laterally extending conductive material as connecting means
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
    • H05B2203/013—Heaters using resistive films or coatings
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
    • H05B2203/017—Manufacturing methods or apparatus for heaters

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Electronic Switches (AREA)
  • Chemical Vapour Deposition (AREA)
DE19863609503 1985-03-22 1986-03-20 Heizwiderstandselement und heizwiderstand unter verwendung desselben Granted DE3609503A1 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP60055654A JPS61216301A (ja) 1985-03-22 1985-03-22 発熱抵抗体
JP60058845A JPS61218113A (ja) 1985-03-23 1985-03-23 発熱抵抗体
JP60058843A JPS61218111A (ja) 1985-03-23 1985-03-23 発熱抵抗体
JP60058527A JPS61218105A (ja) 1985-03-25 1985-03-25 発熱抵抗体

Publications (2)

Publication Number Publication Date
DE3609503A1 true DE3609503A1 (de) 1986-10-02
DE3609503C2 DE3609503C2 (enExample) 1990-10-31

Family

ID=27463231

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19863609503 Granted DE3609503A1 (de) 1985-03-22 1986-03-20 Heizwiderstandselement und heizwiderstand unter verwendung desselben

Country Status (3)

Country Link
US (1) US4870388A (enExample)
DE (1) DE3609503A1 (enExample)
GB (1) GB2174280B (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5616266A (en) * 1994-07-29 1997-04-01 Thermal Dynamics U.S.A. Ltd. Co. Resistance heating element with large area, thin film and method
US5641421A (en) * 1994-08-18 1997-06-24 Advanced Metal Tech Ltd Amorphous metallic alloy electrical heater systems
US6762396B2 (en) 1997-05-06 2004-07-13 Thermoceramix, Llc Deposited resistive coatings
DE19720880A1 (de) * 1997-05-17 1998-11-19 Ego Elektro Geraetebau Gmbh Elektrisches Heizelement
GB9910841D0 (en) 1999-05-10 1999-07-07 Univ Nanyang Heat transfer surface
US6919543B2 (en) 2000-11-29 2005-07-19 Thermoceramix, Llc Resistive heaters and uses thereof
US6991003B2 (en) * 2003-07-28 2006-01-31 M.Braun, Inc. System and method for automatically purifying solvents
DE102004014855A1 (de) * 2004-03-26 2004-10-21 Applied Films Gmbh & Co. Kg Einrichtung zum reaktiven Sputtern
ITMI20042120A1 (it) * 2004-11-05 2005-02-05 Dl Radiators Spa Radiatore a piastre radianti
CN102066842B (zh) * 2008-05-01 2014-10-29 萨莫希雷梅克斯公司 使用加热器涂层的烹饪器具

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE937179C (de) * 1952-10-23 1955-12-29 Philips Nv Verfahren zur Herstellung elektrischer Widerstaende
DE2333495A1 (de) * 1973-07-02 1975-01-23 Siemens Ag Verfahren zum herstellen eines elektrischen schichtwiderstandes
US4036786A (en) * 1976-03-26 1977-07-19 Globe-Union Inc. Fluorinated carbon composition and resistor utilizing same
DE3411702A1 (de) * 1983-03-31 1984-10-04 Director General of Agency of Industrial Science and Technology Michio Kawata, Tokyo/Tokio Verfahren zur herstellung eines mehrkomponentenduennfilms, insbesondere eines amorphen mehrkomponentensiliciumduennfilms
DE3316182A1 (de) * 1983-05-04 1984-11-08 Basf Ag, 6700 Ludwigshafen Verwendung von pyrrol-polymerisaten als elektrische heizelemente

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB923842A (en) * 1959-09-21 1963-04-18 Morganite Resistors Ltd Resistive elements
US3301707A (en) * 1962-12-27 1967-01-31 Union Carbide Corp Thin film resistors and methods of making thereof
US3639165A (en) * 1968-06-20 1972-02-01 Gen Electric Resistor thin films formed by low-pressure deposition of molybdenum and tungsten
US3604970A (en) * 1968-10-14 1971-09-14 Varian Associates Nonelectron emissive electrode structure utilizing ion-plated nonemissive coatings
US3645783A (en) * 1970-06-03 1972-02-29 Infrared Ind Inc Thin film planar resistor
US3757088A (en) * 1972-02-29 1973-09-04 Hercules Inc He same electrically conducting elastomers and electrical members embodying t
LU67513A1 (enExample) * 1972-11-20 1973-07-13
US4060660A (en) * 1976-01-15 1977-11-29 Rca Corporation Deposition of transparent amorphous carbon films
GB1582231A (en) * 1976-08-13 1981-01-07 Nat Res Dev Application of a layer of carbonaceous material to a surface
DE2719988C2 (de) * 1977-05-04 1983-01-05 Siemens AG, 1000 Berlin und 8000 München Amorphe, Tantal enthaltende mindestens bis 300 Grad C temperaturstabile Metallschicht und Verfahren zu ihrer Herstellung
US4296309A (en) * 1977-05-19 1981-10-20 Canon Kabushiki Kaisha Thermal head
DE2724498C2 (de) * 1977-05-31 1982-06-03 Siemens AG, 1000 Berlin und 8000 München Elektrischer Schichtwiderstand und Verfahren zu seiner Herstellung
NL7714567A (nl) * 1977-12-30 1979-07-03 Philips Nv Koolweerstand en werkwijze voor de vervaardiging van een koolweerstand.
US4487709A (en) * 1979-03-29 1984-12-11 Showa Denko K.K. Process for producing electrically conductive high polymer of acetylene
JPS5617988A (en) * 1979-07-24 1981-02-20 Toshio Hirai Electroconductive si3n44c type noncrystalline material by chemical gas phase deposition and its manufacture
JPS5649521A (en) * 1979-09-28 1981-05-06 Yasutoshi Kajiwara Formation of thin film
DE3040972A1 (de) * 1979-10-30 1981-05-14 Fuji Photo Film Co. Ltd., Minami-Ashigara, Kanagawa Elektrophotographisches lichtempfindliches material und verfahren zu dessen herstellung
GB2083841B (en) * 1980-08-21 1985-03-13 Secr Defence Glow discharge coating
DE3175345D1 (en) * 1980-08-21 1986-10-23 Nat Res Dev Coating insulating materials by glow discharge
US4522663A (en) * 1980-09-09 1985-06-11 Sovonics Solar Systems Method for optimizing photoresponsive amorphous alloys and devices
DE3130497A1 (de) * 1981-07-23 1983-02-10 Basf Ag, 6700 Ludwigshafen Verfahren zur herstellung luftstabiler, elektrisch leitfaehiger, polymerer polyensysteme und ihre verwendung in der elektrotechnik und zur antistatischen ausruestung von kunststoffen
JPS5842472A (ja) * 1981-09-07 1983-03-11 Semiconductor Energy Lab Co Ltd サ−マルヘツド
JPS5842473A (ja) * 1981-09-07 1983-03-11 Semiconductor Energy Lab Co Ltd サ−マルヘツド作製方法
FR2514743B1 (fr) * 1981-10-21 1986-05-09 Rca Corp Pellicule amorphe a base de carbone, du type diamant, et son procede de fabrication
US4436797A (en) * 1982-06-30 1984-03-13 International Business Machines Corporation X-Ray mask
JPH0624855B2 (ja) * 1983-04-20 1994-04-06 キヤノン株式会社 液体噴射記録ヘッド
JPS59200248A (ja) * 1983-04-28 1984-11-13 Canon Inc 像形成部材の製造法
JPH0783031B2 (ja) * 1984-03-08 1995-09-06 敏和 須田 ▲ｉｉ▼−▲ｖ▼族化合物半導体の薄膜又は結晶の製造方法
CA1232228A (en) * 1984-03-13 1988-02-02 Tatsuro Miyasato Coating film and method and apparatus for producing the same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE937179C (de) * 1952-10-23 1955-12-29 Philips Nv Verfahren zur Herstellung elektrischer Widerstaende
DE2333495A1 (de) * 1973-07-02 1975-01-23 Siemens Ag Verfahren zum herstellen eines elektrischen schichtwiderstandes
US4036786A (en) * 1976-03-26 1977-07-19 Globe-Union Inc. Fluorinated carbon composition and resistor utilizing same
DE3411702A1 (de) * 1983-03-31 1984-10-04 Director General of Agency of Industrial Science and Technology Michio Kawata, Tokyo/Tokio Verfahren zur herstellung eines mehrkomponentenduennfilms, insbesondere eines amorphen mehrkomponentensiliciumduennfilms
DE3316182A1 (de) * 1983-05-04 1984-11-08 Basf Ag, 6700 Ludwigshafen Verwendung von pyrrol-polymerisaten als elektrische heizelemente

Also Published As

Publication number Publication date
GB8607085D0 (en) 1986-04-30
GB2174280A (en) 1986-10-29
DE3609503C2 (enExample) 1990-10-31
US4870388A (en) 1989-09-26
GB2174280B (en) 1989-03-30

Similar Documents

Publication Publication Date Title
DE2824564C2 (de) Verfahren zum Herstellen von Halbleiterelementen wie Photodioden
DE3429899C2 (enExample)
DE3022259C2 (enExample)
DE3644652A1 (de) Verfahren zur herstellung einer elektronischen vorrichtung mit einer vielschichtigen struktur und eine dadurch erhaltene elektronische vorrichtung
DE1931412A1 (de) Duennschichtwiderstaende und Verfahren zu ihrer Herstellung
DE2736514A1 (de) Verfahren und vorrichtung zum auftragen kohlenstoffhaltiger materialien auf oberflaechen
DE4220717C2 (de) Verfahren zum Bilden einer Siliziumcarbidschicht und deren Verwendung
DE3807755A1 (de) Verfahren zur herstellung einer amorphen kohlenwasserstoffschicht
DE2904171A1 (de) Verfahren zum herstellen von aus amorphem silizium bestehenden halbleiterkoerpern durch glimmentladung
DE2911336A1 (de) Verfahren zur kontrolle plasmachemischer reaktionen
DE3211081C2 (enExample)
DE69838226T2 (de) Verfahren zur plasmabehandlung
DE1544190C3 (de) Verfahren zum Einführen von Störstellen in Diamant
DE3609456A1 (de) Waermeerzeugender widerstand und waermeerzeugendes widerstandselement unter benutzung desselben
DE3609503C2 (enExample)
DE60302754T2 (de) Heizvorrichtung mit einer elektrostatischen Anziehungsfunktion und Verfahren zu ihrer Herstellung
CH493909A (de) Verfahren zur Herstellung eines elektrischen Schichtwiderstandes
US3009834A (en) Process of forming an electroluminescent article and the resulting article
DE2550371A1 (de) Verfahren zum thermischen oxydieren von silicium
DE3644654C2 (enExample)
DE3716235C2 (de) Herstellung von Polymer-Metallverbindungen durch Abscheidung in Glimmentladungszonen
DE69720791T2 (de) Verfahren zur herstellung von diamandfilmen unter verwendung eines dampfphasensynthesesystems
DE2251275A1 (de) Verfahren zum abscheiden von glasschichten
DE3609493C2 (enExample)
DE3608887C2 (enExample)

Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
D2 Grant after examination
8364 No opposition during term of opposition