DE3526826C2 - - Google Patents

Info

Publication number
DE3526826C2
DE3526826C2 DE3526826A DE3526826A DE3526826C2 DE 3526826 C2 DE3526826 C2 DE 3526826C2 DE 3526826 A DE3526826 A DE 3526826A DE 3526826 A DE3526826 A DE 3526826A DE 3526826 C2 DE3526826 C2 DE 3526826C2
Authority
DE
Germany
Prior art keywords
region
gate
channel
channel region
sit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE3526826A
Other languages
German (de)
English (en)
Other versions
DE3526826A1 (de
Inventor
Junichi Nishizawa
Kaoru Mototani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Science and Technology Agency
Original Assignee
Research Development Corp of Japan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP59153969A external-priority patent/JPH0614551B2/ja
Priority claimed from JP59153972A external-priority patent/JPH0614534B2/ja
Application filed by Research Development Corp of Japan filed Critical Research Development Corp of Japan
Publication of DE3526826A1 publication Critical patent/DE3526826A1/de
Application granted granted Critical
Publication of DE3526826C2 publication Critical patent/DE3526826C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/202—FETs having static field-induced regions, e.g. static-induction transistors [SIT] or permeable base transistors [PBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/602—Heterojunction gate electrodes for FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/05—Manufacture or treatment characterised by using material-based technologies using Group III-V technology

Landscapes

  • Junction Field-Effect Transistors (AREA)
DE19853526826 1984-07-26 1985-07-26 Statischer induktionstransistor und denselben enthaltenden integrierte schaltung Granted DE3526826A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP59153969A JPH0614551B2 (ja) 1984-07-26 1984-07-26 熱電子放射型静電誘導トランジスタ
JP59153972A JPH0614534B2 (ja) 1984-07-26 1984-07-26 半導体集積回路

Publications (2)

Publication Number Publication Date
DE3526826A1 DE3526826A1 (de) 1986-02-06
DE3526826C2 true DE3526826C2 (en, 2012) 1990-03-01

Family

ID=26482427

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19853526826 Granted DE3526826A1 (de) 1984-07-26 1985-07-26 Statischer induktionstransistor und denselben enthaltenden integrierte schaltung

Country Status (4)

Country Link
US (2) US4712122A (en, 2012)
DE (1) DE3526826A1 (en, 2012)
FR (1) FR2568410B1 (en, 2012)
GB (1) GB2162370B (en, 2012)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4712122A (en) * 1984-07-26 1987-12-08 Research Development Corp. Heterojunction gate ballistic JFET with channel thinner than Debye length
FR2569056B1 (fr) * 1984-08-08 1989-03-10 Japan Res Dev Corp Transistor a induction statique du type a injection par effet tunnel et circuit integre comprenant un tel transistor
DE69028644T2 (de) * 1989-02-16 1997-02-13 Texas Instruments Inc Integrierte Schaltung und Herstellungsverfahren
US5097312A (en) * 1989-02-16 1992-03-17 Texas Instruments Incorporated Heterojunction bipolar transistor and integration of same with field effect device
JPH03290975A (ja) * 1990-04-09 1991-12-20 Fujitsu Ltd 縦型半導体装置
US5274266A (en) * 1990-09-19 1993-12-28 Siemens Aktiengesellschaft Permeable base transistor having selectively grown emitter
US5532511A (en) * 1992-10-23 1996-07-02 Research Development Corp. Of Japan Semiconductor device comprising a highspeed static induction transistor
US5554561A (en) * 1993-04-30 1996-09-10 Texas Instruments Incorporated Epitaxial overgrowth method
US5889298A (en) * 1993-04-30 1999-03-30 Texas Instruments Incorporated Vertical JFET field effect transistor
US5610085A (en) * 1993-11-29 1997-03-11 Texas Instruments Incorporated Method of making a vertical FET using epitaxial overgrowth
FR2749977B1 (fr) * 1996-06-14 1998-10-09 Commissariat Energie Atomique Transistor mos a puits quantique et procedes de fabrication de celui-ci
US6060723A (en) * 1997-07-18 2000-05-09 Hitachi, Ltd. Controllable conduction device
US6172448B1 (en) 1999-01-29 2001-01-09 Motorola, Inc. Method and apparatus for utilizing heat dissipated from an electrical device
US6977406B2 (en) * 2001-04-27 2005-12-20 National Institute Of Information And Communications Technology, Incorporated Administrative Agency Short channel insulated-gate static induction transistor and method of manufacturing the same
KR20070045255A (ko) * 2004-10-14 2007-05-02 가부시끼가이샤 도시바 Ｆｅｔ-기반의 핵산 검출 센서
JP5087818B2 (ja) * 2005-03-25 2012-12-05 日亜化学工業株式会社 電界効果トランジスタ

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3962716A (en) * 1973-11-12 1976-06-08 Bell Telephone Laboratories, Incorporated Reduction of dislocations in multilayer structures of zinc-blend materials
US4075652A (en) * 1974-04-17 1978-02-21 Matsushita Electronics Corporation Junction gate type gaas field-effect transistor and method of forming
JPS5299787A (en) * 1976-02-18 1977-08-22 Toshiba Corp Junction type field effect transistor and its production
US4326209A (en) * 1977-04-13 1982-04-20 Nippon Gakki Seizo Kabushiki Kaisha Static induction transistor
JPS5466080A (en) * 1977-11-05 1979-05-28 Nippon Gakki Seizo Kk Semiconductor device
US4364072A (en) * 1978-03-17 1982-12-14 Zaidan Hojin Handotai Kenkyu Shinkokai Static induction type semiconductor device with multiple doped layers for potential modification
JPS5598871A (en) * 1979-01-22 1980-07-28 Semiconductor Res Found Static induction transistor
GB2069754B (en) * 1980-02-14 1984-01-04 Itt Ind Ltd Field effect transistor
JPS56124273A (en) * 1980-03-04 1981-09-29 Semiconductor Res Found Semiconductor device
US4366493A (en) * 1980-06-20 1982-12-28 International Business Machines Corporation Semiconductor ballistic transport device
JPS5775464A (en) * 1980-10-28 1982-05-12 Semiconductor Res Found Semiconductor device controlled by tunnel injection
FR2493604A1 (fr) * 1980-10-31 1982-05-07 Thomson Csf Transistors a effet de champ a grille ultra courte
FR2498815A1 (fr) * 1981-01-27 1982-07-30 Thomson Csf Dispositif semi-conducteur de deviation d'electrons du type " a transport balistique ", et procede de fabrication d'un tel dispositif
US4460910A (en) * 1981-11-23 1984-07-17 International Business Machines Corporation Heterojunction semiconductor
FR2520157B1 (fr) * 1982-01-18 1985-09-13 Labo Electronique Physique Dispositif semi-conducteur du genre transistor a heterojonction(s)
US4532533A (en) * 1982-04-27 1985-07-30 International Business Machines Corporation Ballistic conduction semiconductor device
GB2121600A (en) * 1982-05-10 1983-12-21 Philips Electronic Associated Gate controlled unipolar hot-carrier transistors
US4712122A (en) * 1984-07-26 1987-12-08 Research Development Corp. Heterojunction gate ballistic JFET with channel thinner than Debye length
FR2569056B1 (fr) * 1984-08-08 1989-03-10 Japan Res Dev Corp Transistor a induction statique du type a injection par effet tunnel et circuit integre comprenant un tel transistor

Also Published As

Publication number Publication date
FR2568410A1 (fr) 1986-01-31
US5117268A (en) 1992-05-26
DE3526826A1 (de) 1986-02-06
GB2162370A (en) 1986-01-29
FR2568410B1 (fr) 1988-07-29
GB2162370B (en) 1987-10-28
GB8518841D0 (en) 1985-08-29
US4712122A (en) 1987-12-08

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
D2 Grant after examination
8364 No opposition during term of opposition