FR2568410B1 - Transistor statique a induction et son circuit integre - Google Patents
Transistor statique a induction et son circuit integreInfo
- Publication number
- FR2568410B1 FR2568410B1 FR8511514A FR8511514A FR2568410B1 FR 2568410 B1 FR2568410 B1 FR 2568410B1 FR 8511514 A FR8511514 A FR 8511514A FR 8511514 A FR8511514 A FR 8511514A FR 2568410 B1 FR2568410 B1 FR 2568410B1
- Authority
- FR
- France
- Prior art keywords
- integrated circuit
- static induction
- induction transistor
- transistor
- static
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000006698 induction Effects 0.000 title 1
- 230000003068 static effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/7722—Field effect transistors using static field induced regions, e.g. SIT, PBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0605—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits made of compound material, e.g. AIIIBV
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
- H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/432—Heterojunction gate for field effect devices
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59153972A JPH0614534B2 (ja) | 1984-07-26 | 1984-07-26 | 半導体集積回路 |
JP59153969A JPH0614551B2 (ja) | 1984-07-26 | 1984-07-26 | 熱電子放射型静電誘導トランジスタ |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2568410A1 FR2568410A1 (fr) | 1986-01-31 |
FR2568410B1 true FR2568410B1 (fr) | 1988-07-29 |
Family
ID=26482427
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR8511514A Expired FR2568410B1 (fr) | 1984-07-26 | 1985-07-26 | Transistor statique a induction et son circuit integre |
Country Status (4)
Country | Link |
---|---|
US (2) | US4712122A (fr) |
DE (1) | DE3526826A1 (fr) |
FR (1) | FR2568410B1 (fr) |
GB (1) | GB2162370B (fr) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2162370B (en) * | 1984-07-26 | 1987-10-28 | Japan Res Dev Corp | Static induction transistor and integrated circuit comprising such a transistor |
GB2163002B (en) * | 1984-08-08 | 1989-01-05 | Japan Res Dev Corp | Tunnel injection static induction transistor and its integrated circuit |
US5097312A (en) * | 1989-02-16 | 1992-03-17 | Texas Instruments Incorporated | Heterojunction bipolar transistor and integration of same with field effect device |
DE69028644T2 (de) * | 1989-02-16 | 1997-02-13 | Texas Instruments Inc | Integrierte Schaltung und Herstellungsverfahren |
JPH03290975A (ja) * | 1990-04-09 | 1991-12-20 | Fujitsu Ltd | 縦型半導体装置 |
US5274266A (en) * | 1990-09-19 | 1993-12-28 | Siemens Aktiengesellschaft | Permeable base transistor having selectively grown emitter |
US5532511A (en) * | 1992-10-23 | 1996-07-02 | Research Development Corp. Of Japan | Semiconductor device comprising a highspeed static induction transistor |
US5889298A (en) * | 1993-04-30 | 1999-03-30 | Texas Instruments Incorporated | Vertical JFET field effect transistor |
US5554561A (en) * | 1993-04-30 | 1996-09-10 | Texas Instruments Incorporated | Epitaxial overgrowth method |
US5610085A (en) * | 1993-11-29 | 1997-03-11 | Texas Instruments Incorporated | Method of making a vertical FET using epitaxial overgrowth |
FR2749977B1 (fr) * | 1996-06-14 | 1998-10-09 | Commissariat Energie Atomique | Transistor mos a puits quantique et procedes de fabrication de celui-ci |
US6060723A (en) * | 1997-07-18 | 2000-05-09 | Hitachi, Ltd. | Controllable conduction device |
US6172448B1 (en) | 1999-01-29 | 2001-01-09 | Motorola, Inc. | Method and apparatus for utilizing heat dissipated from an electrical device |
US6977406B2 (en) * | 2001-04-27 | 2005-12-20 | National Institute Of Information And Communications Technology, Incorporated Administrative Agency | Short channel insulated-gate static induction transistor and method of manufacturing the same |
WO2006041224A1 (fr) * | 2004-10-14 | 2006-04-20 | Kabushiki Kaisha Toshiba | Capteur de detection d'acide nucleique a base de transistor a effet de champ |
JP5087818B2 (ja) * | 2005-03-25 | 2012-12-05 | 日亜化学工業株式会社 | 電界効果トランジスタ |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3962716A (en) * | 1973-11-12 | 1976-06-08 | Bell Telephone Laboratories, Incorporated | Reduction of dislocations in multilayer structures of zinc-blend materials |
US4075652A (en) * | 1974-04-17 | 1978-02-21 | Matsushita Electronics Corporation | Junction gate type gaas field-effect transistor and method of forming |
JPS5299787A (en) * | 1976-02-18 | 1977-08-22 | Toshiba Corp | Junction type field effect transistor and its production |
US4326209A (en) * | 1977-04-13 | 1982-04-20 | Nippon Gakki Seizo Kabushiki Kaisha | Static induction transistor |
JPS5466080A (en) * | 1977-11-05 | 1979-05-28 | Nippon Gakki Seizo Kk | Semiconductor device |
US4364072A (en) * | 1978-03-17 | 1982-12-14 | Zaidan Hojin Handotai Kenkyu Shinkokai | Static induction type semiconductor device with multiple doped layers for potential modification |
JPS5598871A (en) * | 1979-01-22 | 1980-07-28 | Semiconductor Res Found | Static induction transistor |
GB2069754B (en) * | 1980-02-14 | 1984-01-04 | Itt Ind Ltd | Field effect transistor |
JPS56124273A (en) * | 1980-03-04 | 1981-09-29 | Semiconductor Res Found | Semiconductor device |
US4366493A (en) * | 1980-06-20 | 1982-12-28 | International Business Machines Corporation | Semiconductor ballistic transport device |
JPS5775464A (en) * | 1980-10-28 | 1982-05-12 | Semiconductor Res Found | Semiconductor device controlled by tunnel injection |
FR2493604A1 (fr) * | 1980-10-31 | 1982-05-07 | Thomson Csf | Transistors a effet de champ a grille ultra courte |
FR2498815A1 (fr) * | 1981-01-27 | 1982-07-30 | Thomson Csf | Dispositif semi-conducteur de deviation d'electrons du type " a transport balistique ", et procede de fabrication d'un tel dispositif |
US4460910A (en) * | 1981-11-23 | 1984-07-17 | International Business Machines Corporation | Heterojunction semiconductor |
FR2520157B1 (fr) * | 1982-01-18 | 1985-09-13 | Labo Electronique Physique | Dispositif semi-conducteur du genre transistor a heterojonction(s) |
US4532533A (en) * | 1982-04-27 | 1985-07-30 | International Business Machines Corporation | Ballistic conduction semiconductor device |
GB2121600A (en) * | 1982-05-10 | 1983-12-21 | Philips Electronic Associated | Gate controlled unipolar hot-carrier transistors |
GB2162370B (en) * | 1984-07-26 | 1987-10-28 | Japan Res Dev Corp | Static induction transistor and integrated circuit comprising such a transistor |
GB2163002B (en) * | 1984-08-08 | 1989-01-05 | Japan Res Dev Corp | Tunnel injection static induction transistor and its integrated circuit |
-
1985
- 1985-07-25 GB GB8518841A patent/GB2162370B/en not_active Expired
- 1985-07-25 US US06/759,090 patent/US4712122A/en not_active Expired - Lifetime
- 1985-07-26 DE DE19853526826 patent/DE3526826A1/de active Granted
- 1985-07-26 FR FR8511514A patent/FR2568410B1/fr not_active Expired
-
1990
- 1990-01-24 US US07/469,226 patent/US5117268A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE3526826A1 (de) | 1986-02-06 |
DE3526826C2 (fr) | 1990-03-01 |
US5117268A (en) | 1992-05-26 |
GB8518841D0 (en) | 1985-08-29 |
US4712122A (en) | 1987-12-08 |
GB2162370B (en) | 1987-10-28 |
GB2162370A (en) | 1986-01-29 |
FR2568410A1 (fr) | 1986-01-31 |
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