FR2592526B1 - Circuit integre comportant un transistor lateral - Google Patents

Circuit integre comportant un transistor lateral

Info

Publication number
FR2592526B1
FR2592526B1 FR8519480A FR8519480A FR2592526B1 FR 2592526 B1 FR2592526 B1 FR 2592526B1 FR 8519480 A FR8519480 A FR 8519480A FR 8519480 A FR8519480 A FR 8519480A FR 2592526 B1 FR2592526 B1 FR 2592526B1
Authority
FR
France
Prior art keywords
integrated circuit
lateral transistor
transistor
lateral
integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8519480A
Other languages
English (en)
Other versions
FR2592526A1 (fr
Inventor
Bertrand Jacques
Pierre Leduc
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR8519480A priority Critical patent/FR2592526B1/fr
Publication of FR2592526A1 publication Critical patent/FR2592526A1/fr
Application granted granted Critical
Publication of FR2592526B1 publication Critical patent/FR2592526B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/735—Lateral transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0821—Collector regions of bipolar transistors
FR8519480A 1985-12-31 1985-12-31 Circuit integre comportant un transistor lateral Expired FR2592526B1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR8519480A FR2592526B1 (fr) 1985-12-31 1985-12-31 Circuit integre comportant un transistor lateral

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8519480A FR2592526B1 (fr) 1985-12-31 1985-12-31 Circuit integre comportant un transistor lateral

Publications (2)

Publication Number Publication Date
FR2592526A1 FR2592526A1 (fr) 1987-07-03
FR2592526B1 true FR2592526B1 (fr) 1988-10-14

Family

ID=9326356

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8519480A Expired FR2592526B1 (fr) 1985-12-31 1985-12-31 Circuit integre comportant un transistor lateral

Country Status (1)

Country Link
FR (1) FR2592526B1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1220189B (it) * 1987-12-22 1990-06-06 Sgs Thomson Microelectronics Metodo per aumentare incrementalmente in fase di collaudo elettrico su fetta di un dispositivo integrato l'area di collettore di un transistore pnp laterale
JP3145694B2 (ja) * 1990-08-28 2001-03-12 日本電気株式会社 半導体装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3579059A (en) * 1968-03-11 1971-05-18 Nat Semiconductor Corp Multiple collector lateral transistor device
FR2457564A1 (fr) * 1979-05-23 1980-12-19 Thomson Csf Transistor pnp pour circuit integre bipolaire et son procede de fabrication
JPS56162864A (en) * 1980-05-19 1981-12-15 Hitachi Ltd Semiconductor device

Also Published As

Publication number Publication date
FR2592526A1 (fr) 1987-07-03

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Legal Events

Date Code Title Description
CA Change of address
CD Change of name or company name
ST Notification of lapse