IT1220189B - Metodo per aumentare incrementalmente in fase di collaudo elettrico su fetta di un dispositivo integrato l'area di collettore di un transistore pnp laterale - Google Patents

Metodo per aumentare incrementalmente in fase di collaudo elettrico su fetta di un dispositivo integrato l'area di collettore di un transistore pnp laterale

Info

Publication number
IT1220189B
IT1220189B IT83683/87A IT8368387A IT1220189B IT 1220189 B IT1220189 B IT 1220189B IT 83683/87 A IT83683/87 A IT 83683/87A IT 8368387 A IT8368387 A IT 8368387A IT 1220189 B IT1220189 B IT 1220189B
Authority
IT
Italy
Prior art keywords
slice
phase
integrated device
pnp transistor
collector area
Prior art date
Application number
IT83683/87A
Other languages
English (en)
Other versions
IT8783683A0 (it
Inventor
Franco Bertotti
Paolo Ferrari
Mario Foroni
Maria Teresa Gatti
Original Assignee
Sgs Thomson Microelectronics
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Thomson Microelectronics filed Critical Sgs Thomson Microelectronics
Priority to IT83683/87A priority Critical patent/IT1220189B/it
Publication of IT8783683A0 publication Critical patent/IT8783683A0/it
Priority to DE88830552T priority patent/DE3885257T2/de
Priority to EP88830552A priority patent/EP0322380B1/en
Priority to US07/288,163 priority patent/US4910159A/en
Application granted granted Critical
Publication of IT1220189B publication Critical patent/IT1220189B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/22—Connection or disconnection of sub-entities or redundant parts of a device in response to a measurement
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/30—Marginal testing, e.g. by varying supply voltage
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0821—Collector regions of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • General Engineering & Computer Science (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
IT83683/87A 1987-12-22 1987-12-22 Metodo per aumentare incrementalmente in fase di collaudo elettrico su fetta di un dispositivo integrato l'area di collettore di un transistore pnp laterale IT1220189B (it)

Priority Applications (4)

Application Number Priority Date Filing Date Title
IT83683/87A IT1220189B (it) 1987-12-22 1987-12-22 Metodo per aumentare incrementalmente in fase di collaudo elettrico su fetta di un dispositivo integrato l'area di collettore di un transistore pnp laterale
DE88830552T DE3885257T2 (de) 1987-12-22 1988-12-21 Verfahren, um die Kollektorfläche eines lateralen PNP Transistors differentiel zu vergrössern während des elektrischen Tests einer integrierten Schaltung auf einem Wafer.
EP88830552A EP0322380B1 (en) 1987-12-22 1988-12-21 A method for incrementally increasing the collector area of a lateral PNP transistor during electrical testing of an integrated device on wafer
US07/288,163 US4910159A (en) 1987-12-22 1988-12-22 Method for incrementally increasing the collector area of a lateral PNP transistor during electrical testing of an integrated device on wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT83683/87A IT1220189B (it) 1987-12-22 1987-12-22 Metodo per aumentare incrementalmente in fase di collaudo elettrico su fetta di un dispositivo integrato l'area di collettore di un transistore pnp laterale

Publications (2)

Publication Number Publication Date
IT8783683A0 IT8783683A0 (it) 1987-12-22
IT1220189B true IT1220189B (it) 1990-06-06

Family

ID=11323798

Family Applications (1)

Application Number Title Priority Date Filing Date
IT83683/87A IT1220189B (it) 1987-12-22 1987-12-22 Metodo per aumentare incrementalmente in fase di collaudo elettrico su fetta di un dispositivo integrato l'area di collettore di un transistore pnp laterale

Country Status (4)

Country Link
US (1) US4910159A (it)
EP (1) EP0322380B1 (it)
DE (1) DE3885257T2 (it)
IT (1) IT1220189B (it)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4042740B4 (de) * 1989-07-20 2004-09-09 Hitachi, Ltd. Sensor
DE4042719C2 (de) * 1989-07-20 2003-01-30 Hitachi Ltd Sensor
JP3145694B2 (ja) * 1990-08-28 2001-03-12 日本電気株式会社 半導体装置
US5610079A (en) * 1995-06-19 1997-03-11 Reliance Electric Industrial Company Self-biased moat for parasitic current suppression in integrated circuits

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3761787A (en) * 1971-09-01 1973-09-25 Motorola Inc Method and apparatus for adjusting transistor current
US3958267A (en) * 1973-05-07 1976-05-18 National Semiconductor Corporation Current scaling in lateral pnp structures
JPS5216943A (en) * 1975-07-30 1977-02-08 Hitachi Ltd Analog operation circuit
US4451839A (en) * 1980-09-12 1984-05-29 National Semiconductor Corporation Bilateral zener trim
US4646427A (en) * 1984-06-28 1987-03-03 Motorola, Inc. Method of electrically adjusting the zener knee of a lateral polysilicon zener diode
US4775884A (en) * 1984-08-03 1988-10-04 Linear Technology Corporation Integrated circuit having permanent adjustment circuitry which requires low adjustment current
DE3526485A1 (de) * 1985-07-24 1987-02-05 Heinz Krug Schaltungsanordnung zum pruefen integrierter schaltungseinheiten
FR2592526B1 (fr) * 1985-12-31 1988-10-14 Radiotechnique Compelec Circuit integre comportant un transistor lateral
US4730127A (en) * 1986-12-22 1988-03-08 Motorola, Inc. Method of matching currents from split collector lateral pnp transistors
US4820657A (en) * 1987-02-06 1989-04-11 Georgia Tech Research Corporation Method for altering characteristics of junction semiconductor devices

Also Published As

Publication number Publication date
EP0322380B1 (en) 1993-10-27
IT8783683A0 (it) 1987-12-22
US4910159A (en) 1990-03-20
DE3885257D1 (de) 1993-12-02
DE3885257T2 (de) 1994-02-17
EP0322380A3 (en) 1991-03-13
EP0322380A2 (en) 1989-06-28

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Legal Events

Date Code Title Description
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19961227