DE3485831T2 - Integrierte leistungshalbleiterschaltanordnungen mit igt- und mosfet-strukturen. - Google Patents

Integrierte leistungshalbleiterschaltanordnungen mit igt- und mosfet-strukturen.

Info

Publication number
DE3485831T2
DE3485831T2 DE8484114414T DE3485831T DE3485831T2 DE 3485831 T2 DE3485831 T2 DE 3485831T2 DE 8484114414 T DE8484114414 T DE 8484114414T DE 3485831 T DE3485831 T DE 3485831T DE 3485831 T2 DE3485831 T2 DE 3485831T2
Authority
DE
Germany
Prior art keywords
igt
power semiconductor
semiconductor switching
integrated power
switching arrangements
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8484114414T
Other languages
English (en)
Other versions
DE3485831D1 (de
Inventor
Bantval Jayant Baliga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Application granted granted Critical
Publication of DE3485831D1 publication Critical patent/DE3485831D1/de
Publication of DE3485831T2 publication Critical patent/DE3485831T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)
DE8484114414T 1983-12-05 1984-11-28 Integrierte leistungshalbleiterschaltanordnungen mit igt- und mosfet-strukturen. Expired - Fee Related DE3485831T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/558,403 US4618872A (en) 1983-12-05 1983-12-05 Integrated power switching semiconductor devices including IGT and MOSFET structures

Publications (2)

Publication Number Publication Date
DE3485831D1 DE3485831D1 (de) 1992-08-27
DE3485831T2 true DE3485831T2 (de) 1993-03-11

Family

ID=24229409

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8484114414T Expired - Fee Related DE3485831T2 (de) 1983-12-05 1984-11-28 Integrierte leistungshalbleiterschaltanordnungen mit igt- und mosfet-strukturen.

Country Status (4)

Country Link
US (1) US4618872A (de)
EP (1) EP0144909B1 (de)
JP (1) JPS60191518A (de)
DE (1) DE3485831T2 (de)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6158264A (ja) * 1984-08-29 1986-03-25 Internatl Rectifier Corp Japan Ltd 半導体装置
IT1204243B (it) * 1986-03-06 1989-03-01 Sgs Microelettronica Spa Procedimento autoallineato per la fabbricazione di celle dmos di piccole dimensioni e dispositivi mos ottenuti mediante detto procedimento
US4714876A (en) * 1986-04-14 1987-12-22 Ncr Corporation Circuit for initiating test modes
GB2190539A (en) * 1986-05-16 1987-11-18 Philips Electronic Associated Semiconductor devices
US4896196A (en) * 1986-11-12 1990-01-23 Siliconix Incorporated Vertical DMOS power transistor with an integral operating condition sensor
US4860080A (en) * 1987-03-31 1989-08-22 General Electric Company Isolation for transistor devices having a pilot structure
EP0313000B1 (de) * 1987-10-21 1998-05-06 Siemens Aktiengesellschaft Verfahren zum Herstellen eines Bipolartransistors mit isolierter Gateelektrode
US4827321A (en) * 1987-10-29 1989-05-02 General Electric Company Metal oxide semiconductor gated turn off thyristor including a schottky contact
US4926074A (en) * 1987-10-30 1990-05-15 North American Philips Corporation Semiconductor switch with parallel lateral double diffused MOS transistor and lateral insulated gate transistor
US4939566A (en) * 1987-10-30 1990-07-03 North American Philips Corporation Semiconductor switch with parallel DMOS and IGT
US5028986A (en) * 1987-12-28 1991-07-02 Hitachi, Ltd. Semiconductor device and semiconductor module with a plurality of stacked semiconductor devices
DE58905355D1 (de) * 1988-04-22 1993-09-30 Asea Brown Boveri Abschaltbares Leistungshalbleiterbauelement.
US5155568A (en) * 1989-04-14 1992-10-13 Hewlett-Packard Company High-voltage semiconductor device
JPH0396282A (ja) * 1989-09-08 1991-04-22 Fuji Electric Co Ltd 絶縁ゲート型半導体装置
JP2708596B2 (ja) * 1990-01-31 1998-02-04 キヤノン株式会社 記録ヘッドおよびインクジェット記録装置
KR0127282B1 (ko) * 1992-05-18 1998-04-02 도요다 요시또시 반도체 장치
US5439841A (en) * 1994-01-12 1995-08-08 Micrel, Inc. High value gate leakage resistor
DE69432407D1 (de) * 1994-05-19 2003-05-08 Cons Ric Microelettronica Integrierte Leistungsschaltung ("PIC") mit vertikalem IGB und Verfahren zur Herstellung derselben
JPH08227999A (ja) * 1994-12-21 1996-09-03 Mitsubishi Electric Corp 絶縁ゲート型バイポーラトランジスタ及びその製造方法並びに半導体集積回路及びその製造方法
US5777510A (en) * 1996-02-21 1998-07-07 Integrated Device Technology, Inc. High voltage tolerable pull-up driver and method for operating same
JPH10284729A (ja) * 1997-02-07 1998-10-23 Sony Corp 絶縁ゲートトランジスタ素子及びその駆動方法
US5925910A (en) * 1997-03-28 1999-07-20 Stmicroelectronics, Inc. DMOS transistors with schottky diode body structure
US6133591A (en) * 1998-07-24 2000-10-17 Philips Electronics North America Corporation Silicon-on-insulator (SOI) hybrid transistor device structure
US6213869B1 (en) * 1999-05-10 2001-04-10 Advanced Micro Devices, Inc. MOSFET-type device with higher driver current and lower steady state power dissipation
FR2800515B1 (fr) * 1999-11-03 2002-03-29 St Microelectronics Sa Procede de fabrication de composants de puissance verticaux
US6930473B2 (en) 2001-08-23 2005-08-16 Fairchild Semiconductor Corporation Method and circuit for reducing losses in DC-DC converters
US6573460B2 (en) 2001-09-20 2003-06-03 Dpac Technologies Corp Post in ring interconnect using for 3-D stacking
US6573461B2 (en) 2001-09-20 2003-06-03 Dpac Technologies Corp Retaining ring interconnect used for 3-D stacking
JP4815885B2 (ja) * 2005-06-09 2011-11-16 トヨタ自動車株式会社 半導体装置の制御方法
US8183892B2 (en) 2009-06-05 2012-05-22 Fairchild Semiconductor Corporation Monolithic low impedance dual gate current sense MOSFET
US8120074B2 (en) * 2009-10-29 2012-02-21 Infineon Technologies Austria Ag Bipolar semiconductor device and manufacturing method
US9349847B2 (en) 2011-12-15 2016-05-24 Hitachi, Ltd. Semiconductor device and power converter
KR101986090B1 (ko) 2012-04-06 2019-06-05 삼성전자 주식회사 가드링을 포함하는 반도체 장치 및 이를 포함하는 반도체 시스템
US9911838B2 (en) 2012-10-26 2018-03-06 Ixys Corporation IGBT die structure with auxiliary P well terminal
JP2016058654A (ja) * 2014-09-11 2016-04-21 株式会社東芝 半導体装置
US9991379B1 (en) * 2016-11-17 2018-06-05 Sanken Electric Co., Ltd. Semiconductor device with a gate insulating film formed on an inner wall of a trench, and method of manufacturing the same

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52132684A (en) * 1976-04-29 1977-11-07 Sony Corp Insulating gate type field effect transistor
US4145703A (en) * 1977-04-15 1979-03-20 Supertex, Inc. High power MOS device and fabrication method therefor
US4260908A (en) * 1978-08-30 1981-04-07 Texas Instruments Incorporated Microelectronic remote switching circuit
US4364073A (en) * 1980-03-25 1982-12-14 Rca Corporation Power MOSFET with an anode region
SE8107136L (sv) * 1980-12-02 1982-06-03 Gen Electric Styrelektrodforsedd likriktaranordning
US4402003A (en) * 1981-01-12 1983-08-30 Supertex, Inc. Composite MOS/bipolar power device
JPS58212173A (ja) * 1982-04-01 1983-12-09 株式会社東芝 制御装置を備えたバイポ−ラ・トランジスタ装置
US4417385A (en) * 1982-08-09 1983-11-29 General Electric Company Processes for manufacturing insulated-gate semiconductor devices with integral shorts
EP0118007B1 (de) * 1983-02-04 1990-05-23 General Electric Company Elektrische Schaltung eine hybride Leistungsschalthalbleiteranordnung mit SCR-Struktur enthaltend

Also Published As

Publication number Publication date
US4618872A (en) 1986-10-21
EP0144909A2 (de) 1985-06-19
JPS60191518A (ja) 1985-09-30
EP0144909B1 (de) 1992-07-22
EP0144909A3 (en) 1987-05-27
JPH0312783B2 (de) 1991-02-21
DE3485831D1 (de) 1992-08-27

Similar Documents

Publication Publication Date Title
DE3485831D1 (de) Integrierte leistungshalbleiterschaltanordnungen mit igt- und mosfet-strukturen.
DE3482078D1 (de) Halbleiteranordnung mit erhoehter durchbruchspannung.
DE3485409D1 (de) Halbleiterschaltvorrichtung.
DE3889245T2 (de) Integrierter und kontrollierter Leistungs-MOSFET.
DE3581548D1 (de) Stromversorgungsleiter-struktur in einer integrierten halbleiterschaltung.
DE3679108D1 (de) Halbleiteranordnungen.
DE69032496D1 (de) Leistungshalbleiteranordnung
DE69511726D1 (de) Halbleiteranordnung mit isoliertem gate
DE3685071D1 (de) Integrierte halbleiterschaltung.
DE69029907T2 (de) Leistungs-mosfet-transistorschaltung
DE3483959D1 (de) Hohlleiterschalter.
DE3685759T2 (de) Integrierte halbleiterschaltung.
DE3684364D1 (de) Integrierte halbleiterschaltung.
DE3771648D1 (de) Halbleiterbauelement mit mindestens einem leistungs-mosfet.
DE3583113D1 (de) Integrierte halbleiterschaltungsanordnung in polycell-technik.
DE3650638T2 (de) Integrierte Halbleiterschaltung mit Isolationszone
DE3785398T2 (de) Aktive lastschaltung.
DE3687557T2 (de) Schutzschalter mit integriertem fluss-nebenschluss-ausloeser.
DE3581159D1 (de) Halbleiteranordnung mit integrierter schaltung.
DE3688809T2 (de) MISFET-Halbleiteranordnung mit verminderten Leckstrom.
DE3850445T2 (de) Integrierter Halbleiterschaltkreis mit reduziertem Energieverbrauch.
DE69529490D1 (de) Halbleiteranordnung mit Mesastruktur
DE68913014T2 (de) Leistungsschaltungsvorrichtung.
DE3677627D1 (de) Halbleiteranordnung mit isoliertem gate.
DE59107763D1 (de) Leistungshalbleiterbauelement

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee