DE3850445T2 - Integrierter Halbleiterschaltkreis mit reduziertem Energieverbrauch. - Google Patents

Integrierter Halbleiterschaltkreis mit reduziertem Energieverbrauch.

Info

Publication number
DE3850445T2
DE3850445T2 DE3850445T DE3850445T DE3850445T2 DE 3850445 T2 DE3850445 T2 DE 3850445T2 DE 3850445 T DE3850445 T DE 3850445T DE 3850445 T DE3850445 T DE 3850445T DE 3850445 T2 DE3850445 T2 DE 3850445T2
Authority
DE
Germany
Prior art keywords
energy consumption
semiconductor circuit
integrated semiconductor
reduced energy
reduced
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3850445T
Other languages
English (en)
Other versions
DE3850445D1 (de
Inventor
Shinji Saito
Kazuyuki Nonaka
Hideji Sumi
Takehiro Akiyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu VLSI Ltd
Fujitsu Ltd
Original Assignee
Fujitsu VLSI Ltd
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu VLSI Ltd, Fujitsu Ltd filed Critical Fujitsu VLSI Ltd
Publication of DE3850445D1 publication Critical patent/DE3850445D1/de
Application granted granted Critical
Publication of DE3850445T2 publication Critical patent/DE3850445T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03J—TUNING RESONANT CIRCUITS; SELECTING RESONANT CIRCUITS
    • H03J5/00—Discontinuous tuning; Selecting predetermined frequencies; Selecting frequency bands with or without continuous tuning in one or more of the bands, e.g. push-button tuning, turret tuner
    • H03J5/02—Discontinuous tuning; Selecting predetermined frequencies; Selecting frequency bands with or without continuous tuning in one or more of the bands, e.g. push-button tuning, turret tuner with variable tuning element having a number of predetermined settings and adjustable to a desired one of these settings
    • H03J5/0245—Discontinuous tuning using an electrical variable impedance element, e.g. a voltage variable reactive diode, in which no corresponding analogue value either exists or is preset, i.e. the tuning information is only available in a digital form
    • H03J5/0272—Discontinuous tuning using an electrical variable impedance element, e.g. a voltage variable reactive diode, in which no corresponding analogue value either exists or is preset, i.e. the tuning information is only available in a digital form the digital values being used to preset a counter or a frequency divider in a phase locked loop, e.g. frequency synthesizer
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H03K17/603—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors with coupled emitters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
    • H03K3/28—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
    • H03K3/281—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
    • H03K3/286—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable
    • H03K3/288—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable using additional transistors in the input circuit
    • H03K3/2885—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable using additional transistors in the input circuit the input circuit having a differential configuration
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0036—Means reducing energy consumption

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Logic Circuits (AREA)
  • Stabilization Of Oscillater, Synchronisation, Frequency Synthesizers (AREA)
DE3850445T 1987-05-09 1988-05-06 Integrierter Halbleiterschaltkreis mit reduziertem Energieverbrauch. Expired - Fee Related DE3850445T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62112842A JP2575702B2 (ja) 1987-05-09 1987-05-09 シンセサイザ・チュ−ナ

Publications (2)

Publication Number Publication Date
DE3850445D1 DE3850445D1 (de) 1994-08-04
DE3850445T2 true DE3850445T2 (de) 1994-10-13

Family

ID=14596895

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3850445T Expired - Fee Related DE3850445T2 (de) 1987-05-09 1988-05-06 Integrierter Halbleiterschaltkreis mit reduziertem Energieverbrauch.

Country Status (4)

Country Link
US (1) US4897560A (de)
EP (1) EP0291240B1 (de)
JP (1) JP2575702B2 (de)
DE (1) DE3850445T2 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5091662A (en) * 1989-05-23 1992-02-25 Texas Instruments Incorporated High-speed low-power supply-independent TTL compatible input buffer
US5015887A (en) * 1989-11-03 1991-05-14 Harris Corporation A-B buffer circuit with TTL compatible output drive
US5030854A (en) * 1990-04-05 1991-07-09 Gazelle Microcircuits, Inc. Translator circuit for converting ECL type signals to TTL type signals
JP2606556B2 (ja) * 1993-06-30 1997-05-07 日本電気株式会社 クランプ回路
SE514943C2 (sv) * 1994-01-12 2001-05-21 Ericsson Ge Mobile Communicat Sätt vid energibesparing i en batteridriven sändare - mottagare
US5563549A (en) * 1995-03-17 1996-10-08 Maxim Integrated Products, Inc. Low power trim circuit and method
DE19624676C1 (de) * 1996-06-20 1997-10-02 Siemens Ag Schaltungsanordnung zur Erzeugung eines Referenzpotentials
US5907562A (en) * 1996-07-31 1999-05-25 Nokia Mobile Phones Limited Testable integrated circuit with reduced power dissipation
US7298182B2 (en) * 2004-06-15 2007-11-20 Infineon Technologies Ag Comparator using differential amplifier with reduced current consumption

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3794861A (en) * 1972-01-28 1974-02-26 Advanced Memory Syst Inc Reference voltage generator circuit
JPS6028414B2 (ja) * 1977-09-09 1985-07-04 株式会社日立製作所 半導体論理回路
US4207530A (en) * 1977-09-12 1980-06-10 Motorola, Inc. Electrically tunable inductor and method
JPS5664518A (en) * 1979-10-30 1981-06-01 Nec Corp Integrated logic circuit
JPS58125915A (ja) * 1981-12-29 1983-07-27 Fujitsu Ltd バイアス回路
JPS5961046A (ja) * 1982-09-30 1984-04-07 Fujitsu Ltd 集積回路装置
US4490670A (en) * 1982-10-25 1984-12-25 Advanced Micro Devices, Inc. Voltage generator
JPS6065557A (ja) * 1983-09-21 1985-04-15 Fujitsu Ltd 集積回路装置
US4533842A (en) * 1983-12-01 1985-08-06 Advanced Micro Devices, Inc. Temperature compensated TTL to ECL translator
JPS6143829A (ja) * 1984-08-07 1986-03-03 Mitsubishi Electric Corp 半導体集積回路
US4639661A (en) * 1985-09-03 1987-01-27 Advanced Micro Devices, Inc. Power-down arrangement for an ECL circuit

Also Published As

Publication number Publication date
EP0291240A3 (en) 1990-10-17
EP0291240A2 (de) 1988-11-17
DE3850445D1 (de) 1994-08-04
EP0291240B1 (de) 1994-06-29
JP2575702B2 (ja) 1997-01-29
US4897560A (en) 1990-01-30
JPS63278416A (ja) 1988-11-16

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee