DE69029907T2 - Leistungs-mosfet-transistorschaltung - Google Patents

Leistungs-mosfet-transistorschaltung

Info

Publication number
DE69029907T2
DE69029907T2 DE69029907T DE69029907T DE69029907T2 DE 69029907 T2 DE69029907 T2 DE 69029907T2 DE 69029907 T DE69029907 T DE 69029907T DE 69029907 T DE69029907 T DE 69029907T DE 69029907 T2 DE69029907 T2 DE 69029907T2
Authority
DE
Germany
Prior art keywords
power mosfet
transistor circuit
mosfet transistor
circuit
power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69029907T
Other languages
English (en)
Other versions
DE69029907D1 (de
Inventor
Paul Joseph Wodarczyk
Carl Frank Wheatley
John Manning Savidge Neilson
Frederich Peter Jones
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Harris Semiconductor Patents Inc
Original Assignee
Harris Semiconductor Patents Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Harris Semiconductor Patents Inc filed Critical Harris Semiconductor Patents Inc
Application granted granted Critical
Publication of DE69029907D1 publication Critical patent/DE69029907D1/de
Publication of DE69029907T2 publication Critical patent/DE69029907T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
DE69029907T 1989-12-07 1990-11-20 Leistungs-mosfet-transistorschaltung Expired - Fee Related DE69029907T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/447,330 US5023692A (en) 1989-12-07 1989-12-07 Power MOSFET transistor circuit
PCT/US1990/006797 WO1991009424A1 (en) 1989-12-07 1990-11-20 Power mosfet transistor circuit

Publications (2)

Publication Number Publication Date
DE69029907D1 DE69029907D1 (de) 1997-03-20
DE69029907T2 true DE69029907T2 (de) 1997-09-04

Family

ID=23775932

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69029907T Expired - Fee Related DE69029907T2 (de) 1989-12-07 1990-11-20 Leistungs-mosfet-transistorschaltung

Country Status (5)

Country Link
US (1) US5023692A (de)
EP (1) EP0457886B1 (de)
JP (1) JP3041043B2 (de)
DE (1) DE69029907T2 (de)
WO (1) WO1991009424A1 (de)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5079608A (en) * 1990-11-06 1992-01-07 Harris Corporation Power MOSFET transistor circuit with active clamp
DE4120394A1 (de) * 1991-06-20 1992-12-24 Bosch Gmbh Robert Monolithisch integrierte schaltungsanordnung
GB9115699D0 (en) * 1991-07-19 1991-09-04 Philips Electronic Associated An overvoltage protected semiconductor switch
DE69225026T2 (de) * 1991-07-19 1998-10-15 Koninkl Philips Electronics Nv Überspannungsgeschützter Halbleiterschalter
GB9215654D0 (en) * 1992-07-23 1992-09-09 Philips Electronics Uk Ltd A semiconductor component
US5408141A (en) * 1993-01-04 1995-04-18 Texas Instruments Incorporated Sensed current driving device
JPH07146722A (ja) * 1993-10-01 1995-06-06 Fuji Electric Co Ltd トランジスタ用過電流保護装置
JP3018816B2 (ja) * 1993-02-22 2000-03-13 株式会社日立製作所 半導体素子の保護回路ならびにこれを有する半導体装置
JP2917729B2 (ja) * 1993-03-03 1999-07-12 住友電気工業株式会社 光ファイバ母材の製造方法
EP0625797B1 (de) * 1993-05-19 1999-08-11 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno Integrierte Struktur eines Strom-Fühlwiderstandes für Leistungs-MOSFET-Vorrichtungen, insbesondere für Leistungs-MOSFET-Vorrichtungen mit einer Überstrom-Selbst-Schutzschaltung
US5691555A (en) * 1993-05-19 1997-11-25 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno Integrated structure current sensing resistor for power devices particularly for overload self-protected power MOS devices
US5373434A (en) * 1994-03-21 1994-12-13 International Business Machines Corporation Pulse width modulated power supply
DE59409484D1 (de) * 1994-10-28 2000-09-21 Siemens Ag Festkörperschaltelement mit zwei source-elektroden und festkörperschalter mit einem solchen element
US5767546A (en) * 1994-12-30 1998-06-16 Siliconix Incorporated Laternal power mosfet having metal strap layer to reduce distributed resistance
US5665996A (en) * 1994-12-30 1997-09-09 Siliconix Incorporated Vertical power mosfet having thick metal layer to reduce distributed resistance
US5811857A (en) * 1996-10-22 1998-09-22 International Business Machines Corporation Silicon-on-insulator body-coupled gated diode for electrostatic discharge (ESD) and analog applications
US6323522B1 (en) 1999-01-08 2001-11-27 International Business Machines Corporation Silicon on insulator thick oxide structure and process of manufacture
US6784486B2 (en) * 2000-06-23 2004-08-31 Silicon Semiconductor Corporation Vertical power devices having retrograded-doped transition regions therein
US6781194B2 (en) * 2001-04-11 2004-08-24 Silicon Semiconductor Corporation Vertical power devices having retrograded-doped transition regions and insulated trench-based electrodes therein
US6392463B1 (en) * 2000-07-07 2002-05-21 Denso Corporation Electrical load driving circuit with protection
CN1520616A (zh) * 2001-04-11 2004-08-11 ��˹�������뵼�幫˾ 具有防止基区穿通的横向延伸基区屏蔽区的功率半导体器件及其制造方法
US7139157B2 (en) * 2004-07-30 2006-11-21 Kyocera Wireless Corp. System and method for protecting a load from a voltage source
US8345391B2 (en) * 2009-09-17 2013-01-01 Linear Technology Corporation DC/DC converter overcurrent protection
GB2479535A (en) * 2010-04-13 2011-10-19 Rolls Royce Plc Current limiter for a vehicle power distribution network
WO2022201817A1 (ja) * 2021-03-22 2022-09-29 ローム株式会社 スイッチ装置、電子機器、車両

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4377945A (en) * 1978-10-30 1983-03-29 Giovanni Bernard A Di Service line interior by-pass
JPS5912451Y2 (ja) * 1979-09-11 1984-04-14 トヨタ自動車株式会社 油圧シリンダ
JPS60188691A (ja) * 1984-03-08 1985-09-26 積水プラントシステム株式会社 地下埋没管の補修方法
US4631564A (en) * 1984-10-23 1986-12-23 Rca Corporation Gate shield structure for power MOS device
JPS6355970A (ja) * 1986-08-26 1988-03-10 Fujitsu Ltd 入力保護回路
US4860080A (en) * 1987-03-31 1989-08-22 General Electric Company Isolation for transistor devices having a pilot structure
US4893158A (en) * 1987-06-22 1990-01-09 Nissan Motor Co., Ltd. MOSFET device

Also Published As

Publication number Publication date
US5023692A (en) 1991-06-11
EP0457886A1 (de) 1991-11-27
EP0457886A4 (en) 1992-06-10
JP3041043B2 (ja) 2000-05-15
DE69029907D1 (de) 1997-03-20
JPH05503190A (ja) 1993-05-27
EP0457886B1 (de) 1997-02-05
WO1991009424A1 (en) 1991-06-27

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee